Diodes MMBD4448H User Manual
Features
• Fast Switching Speed
• Surface Mount Package Ideally Suited for Automated Insertion
• For General Purpose Switching Applications
• High Conductance
• Lead Free/RoHS Compliant (Note 1)
SOT23
Top View
MMBD4448H
SURFACE MOUNT SWITCHING DIODE
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Polarity: See Diagram
• Weight: 0.008 grams (approximate)
Top View
Internal Schematic
Ordering Information (Note 2)
Part Number Case Packaging
MMBD4448H-7-F SOT23 3000/Tape & Reel
Notes: 1. No purposefully added lead.
2. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code M N P R S T U V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
MMBD4448H
Document number: DS30176 Rev. 10 - 2
KA3
YM
www.diodes.com
KA3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
1 of 4
February 2011
© Diodes Incorporated
)
θ
(BR)
r
P, P
OWER
P
T
O
N
T
T
O
U
F
O
R
RD CUR
R
T
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 3)
Average Rectified Output Current (Note 3)
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0s
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
Thermal Resistance Junction to Ambient Air (Note 3)
Operating and Storage Temperature Range
V
T
V
RM
V
RRM
V
RWM
V
R
R(RMS
I
FM
I
O
I
FSM
P
D
R
JA
, T
J
STG
MMBD4448H
100 V
80 V
57 V
500 mA
250 mA
4.0
1.0
A
350 mW
357
-65 to +150
°C/W
°C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 4)
Forward Voltage
Reverse Current (Note 4)
Total Capacitance
Reverse Recovery Time
Notes: 3. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
4. Short duration pulse test used to minimize self-heating effect.
V
V
F
I
⎯
R
C
⎯
T
t
⎯
r
80
R
0.62
⎯
⎯
⎯
⎯
0.72
0.855
1.0
1.25
100
50
30
25
3.5 pF
4.0 ns
V
IR = 2.5μA
= 5.0mA
I
F
= 10mA
I
F
V
I
= 100mA
F
= 150mA
I
F
V
nA
μA
μA
nA
= 70V
R
V
= 75V, TJ = 150°C
R
= 25V, TJ = 150°C
V
R
V
= 20V
R
VR = 6V, f = 1.0MHz
VR = 6V, IF = 5mA
500
1,000
(mA)
400
(mW)
EN
100
I
A
300
WA
S
ANE
AN
F
I, INS
10
T = -40ºC
A
T = 0ºC
A
T = 25ºC
0.8
A
T = 75ºC
A
T = 125ºC
A
1
0.1
0
V , INSTANTANEOUS FORWARD VOLT AGE (V)
F
Fig. 2 Typical Forward Characteristics
1.61.20.4
DISSI
200
D
100
0
0
T , AMBIENT TEMPERATURE (ºC)
A
Fig. 1 Power Derating Curve (Note 3)
1208040 160
200
MMBD4448H
Document number: DS30176 Rev. 10 - 2
2 of 4
www.diodes.com
February 2011
© Diodes Incorporated
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