Diodes MJD340 User Manual
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θ
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Features
• Epitaxial Planar Die Construction
• High Collector-EmitterVoltage
• Ideally Suited for Automated Assembly Processes
• Ideal for Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
NEW PRODUCT
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Top View
= 25°C unless otherwise specified
A
HIGH VOLTAGE NPN SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: DPAK
• Case Material: Molded Plastic, "Green" Molding Compound. UL
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper Leadframe
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.34 grams (approximate)
COLLECTOR
2,4
1
BASE
3
EMITTER
Device Schematic
MJD340
Flammability Classification Rating 94V-0
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
3
24
1
Pin Out Configuration
V
CBO
V
CEO
V
EBO
I
C
I
CM
300 V
300 V
3 V
0.5 A
0.75 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @TC = 25°C PD
Thermal Resistance, Junction to Case
Power Dissipation @TA = 25°C (Note 3) PD
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics @T
OFF CHARACTERISTICS (Note 4)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
MJD340
Document number: DS31609 Rev. 2 - 2
Characteristic Symbol Min Typ Max Unit Test Condition
A
R
R
, T
T
J
= 25°C unless otherwise specified
V
SUS)CEO
I
CBO
I
EBO
h
FE
300
⎯ ⎯
⎯ ⎯
30
1 of 4
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JC
JA
STG
⎯ ⎯
⎯
15 W
8.33 °C/W
1.56 W
80 °C/W
-55 to +150 °C
V
I
= 1mA, IB = 0
100
100
240
C
μA
μA
⎯
= 300V, IE = 0
V
CB
= 3V, IC = 0
V
EB
VCE = 10V, IC = 50mA
December 2008
© Diodes Incorporated
C
O
CTO
R C
URR
T
C CUR
REN
T GAIN
C
O
CTO
R
T
TER
2
T
T
R
TUR
N
O
N
OLT
G
2
T
T
R
TURAT
O
N
OLT
G
NEW PRODUCT
MJD340
2.0
1.5
10
(A)
1
EN
Pw = -10ms
1.0
0.1
Pw = -100ms
DC
LLE
0.5
D
P , POWER DISSIPATI ON (W)
1,000
R = 81°C/W
θ
JA
0
25 50 75 100 125 150
0
T , AMBIENT TEMPERA TURE ( C)
A
°
Fig. 1 Pow er D issipati o n
vs. Ambient Temperat ur e (Note 3)
0.01
C
I,
0.001
0.1 1 10 100 1,000
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
1
I/I = 10
CB
T = 150°C
A
T = 85°C
A
T = 25°C
100
FE
h, D
A
T = -55°C
A
V = 2V
CE
10
0.1 1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
C
1.
E (V)
A
1.0
V = 2V
CE
V
0.8
-
T = -55°C
A
0.6
E
T = 25°C
A
0.4
T = 85°C
A
-EMI
VOLTAGE (V)
0.1
LLE
SATURATION
CE(SAT)
V,
T = 150°C
A
T = 85°C
A
T = -55°C
A
T = 25°C
A
0.01
0.1 1 10 100 1,000
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
C
vs. Collecto r Cu r re nt
1.
I = 10
/I
E (V)
A
1.0
CB
V
0.8
I
T = -55°C
A
0.6
SA
T = 25°C
A
E
0.4
T = 85°C
A
0.2
T = 150°C
A
BE(ON)
0
V, BASE-EMI
0.1 1 10 100 1,000
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.2
T = 150°C
A
0
0.1 1 10 100 1,000
BE(SAT)
V , BASE-EMI
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
MJD340
Document number: DS31609 Rev. 2 - 2
2 of 4
www.diodes.com
December 2008
© Diodes Incorporated
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