Diodes MJD32CQ User Manual

Description

This Bipolar Junction Transistor (BJT) has been designed to meet the
stringent requirements of Automotive Applications.

Features

 BV
 I

 I
 Ideal for Power Switching or Amplification Applications

 Complementary NPN Type: MJD31CQ
 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability
 PPAP Capable (Note 4)

> -100V

CEO

= -3A high Continuous Collector Current

C

= -5A Peak Pulse Current

CM

TO252 (DPAK)

Top View

B

Device Schematic

MJD32CQ

100V PNP HIGH VOLTAGE TRANSISTOR IN TO252

Mechanical Data

 Case: TO252 (DPAK)
 Case Material: Molded Plastic, "Green" Molding Compound

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish – Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

 Weight: 0.34 grams (approximate)

C

E

Pin Out Configuration

Top view

Ordering Information (Notes 4 & 5)

Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel

MJD32CQ-13 Automotive MJD32C 13 16 2,500

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

MJD32CQ

Document number: DS37050 Rev. 1 - 2

www.diodes.com

MJD32C = Product Type Marking Code

= Manufacturers’ code marking
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 10 = 2010)
WW = Week Code (01 - 53)

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March 2014

© Diodes Incorporated

Absolute Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

(Note 6)

Power Dissipation

(Note 7) 2.1
(Note 8) 1.6
(Note 9) 15
(Note 6)

Thermal Resistance, Junction to Ambient Air

(Note 7) 59

(Note 8) 80
Thermal Resistance, Junction to Leads (Note 9)
Operating and Storage Temperature Range

ESD Ratings (Note 10)

MJD32CQ

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

B

P

D

R

θJA

R

θJL

T

, T

J

STG

-100 V

-100 V

-6 V

-3 A

-5 A

-1 A

3.9

W

32

°C/W

8.4

-55 to +150 °C

Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A

Characteristic Symbol Value Unit JEDEC Class

Electrostatic Discharge - Machine Model ESD MM 400 V C

Notes: 6. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured

8. Same as note (6), except mounted on minimum recommended pad (MRP) layout.

under still air conditions whilst operating in a steady-state.

7. Same as note (6), except mounted on 25mm x 25mm 1oz copper.

9. Thermal resistance from junction to solder-point (on the exposed collector pad).

10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

MJD32CQ

Document number: DS37050 Rev. 1 - 2

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March 2014

© Diodes Incorporated

Thermal Characteristics

10

V

CE(sat)

Limited

DC

1

100m

Collector Current (A)

C

10m

-I

100m 1 10 100

1s

100ms

Single Pulse

T

=25°C

amb

10ms

1ms

-VCE Collector-Emitter Voltage (V)

Safe Operating Area

T

=25°C

AMB

80

Minimum Copper

60

D=0.5

40

D=0.2

20

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

Pulse Width (s)

Transient Thermal Impedance

100µs

D=0.1

Single Pulse

D=0.05

10

V

CE(sat)

Limited

1

0.1

Single Pulse

Collector Current (A)

C

0.01

-I

T

CASE

0.1 1 10 100

DC

100ms

10ms

1ms

100s

=25°C

-VCE Collector-Emitter Voltage (V)

Safe Operating Area

8

6

D=0.5

4

2

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

D=0.2

D=0.1

D=0.05

Single Pulse

T

CASE

Pulse Width (s)

Transient Thermal Impedance

MJD32CQ

=25°C

MJD32CQ

Document number: DS37050 Rev. 1 - 2

3 of 7

www.diodes.com

March 2014

© Diodes Incorporated