Page 1
Features
• Epitaxial Planar Die Construction
• Built-In Biasing Resistors
• One 500mA PNP and One 100mA NPN
• Lead Free/RoHS Compliant (Note 1)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-363
• Case Material - Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020A
NEW PPRODRODUCT T UC
• Terminals: Finish - Solderable per MIL-STD-202,
Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
• Marking Code: C73 See Page 4
• Ordering & Date Code: See Page 4
• Terminal Connections: See Diagram
• Weight: 0.015 grams (approximate)
P/N R1 R2
MIMD10A Tr1
Tr2
0.1K
10K
10K
-
MIMD10AMIMD10A
DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT
A
C
B
2
1
E
B
2
2
H
K
J
D
SCHEMATIC DIAGRAM
E
1
SOT-363
Dim Min Max
A 0.10 0.30
C
B
B 1.15 1.35
C 2.00 2.20
C
1
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
M
J
K 0.90 1.00
⎯
0.10
L 0.25 0.40
L
F
T
R
R
r2
1
2
R
T
1
r1
M 0.10 0.25
0°
α
All Dime sions in mmn
8°
Maximum Ratings PNP Section Tr1 @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Supply Voltage
Input Voltage
Output Current
Maximum Ratings NPN Section Tr2 @T
= 25°C unless otherwise specified
A
VCC
VIN
IO
-5 to +5 V
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Maximum Ratings - Total @T
= 25°C unless otherwise specified
A
V
CBO
V
CEO
V
EBO
IC
Characteristic Symbol Value Unit
Power Dissipation (Note 2)
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30381 Rev. 8 - 2
2. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
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Tj, T
Pd
STG
-55 to +150 °C
-50 V
-500 mA
50 V
50 V
5 V
100 mA
200 mW
© Diodes Incorporated
MIMD10A
Page 2
Electrical Characteristics PNP Section Tr1 @T
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product*
* Transistor - For Reference Only
NEW PRODUCT
Electrical Characteristics NPN Section Tr2 @T
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
V
DC Current Transfer Ratio
Gain-Bandwidth Product*
* Transistor - For Reference Only
DS30381 Rev. 8 - 2
= 25°C unless otherwise specified
A
V
V
V
l(off)
l(on)
O(on)
-0.3
⎯ ⎯
⎯
Il ⎯ ⎯
I
⎯ ⎯
O(off)
Gl
68
fT ⎯
= 25°C unless otherwise specified
A
BV
BV
BV
I
CBO
I
EBO
CE(sat)
hFE
CBO
CEO
EBO
50
50
5
⎯ ⎯
⎯ ⎯
⎯ ⎯
100 250 600
fT ⎯
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⎯ ⎯ VCC = -5V, IO = -100μA
V
-1.5
-0.1 -0.3 V
-25 mA
-0.5
VO = 0.3, IO = -100mA
IO = -100mA/-5mA
VI = -2V
μA
VCC = -50V, VI = 0V
⎯ ⎯ ⎯
200
⎯ ⎯
⎯ ⎯
⎯ ⎯
250
0.5
0.5
0.3 V
⎯
⎯
MHz
V
V
V
μA
μA
⎯
MHz
VCE = -10V, IE = -50mA, f = 100MHz
IC = 50μA
IC = 1mA
IE = 50μA
VCB = 50V
VEB = 4V
IC/IB = 10mA / 1.0mA
IC = 1mA, VCE = 5V
VCE = 10V, IE = -5mA, f = 100MHz
⎯
© Diodes Incorporated
MIMD10A
Page 3
P, P
OWER
PATIO
N
T
T
UM C
O
CTO
R VOLTAG
C CUR
RENT G
O
R
C, CAPACITAN
C
C
O
CTO
R C
U
R
R
N
T
Typical Curves – Tr2
250
S)
200
1
I/I = 10
CB
E (V)
NEW PRODUCT
(MILLIWA
DISSI
D
1,000
MALIZED)
AIN (N
150
100
(TOTAL PACKAGE)
100
10
50
0.1
LLE
25 C
75 C
°
-25 C
°
°
0.01
CE(SAT)
V, MAXIM
0
-50
050100
T , AMBIENT TEMPERATURE ( C)
A
Fig. 1 Derating Curve
150
°
0.001
0
10
I , COLLECTOR CURRENT (mA)
C
20
Fig. 2 V vs. I
30
CE(SAT) C
40
50
4
I = 0mA
E
3
E (pF)
2
OB
1
FE
h, D
1
110
I , COLLECTOR CURRENT (mA)
C
Fig. 3 DC Current Gain
100
75°C
100
10
0
0
10
5
V , REVERSE BIAS VOLTAGE (V)
R
15
Fig. 4 Output Capacitance
V = 0.2
O
20
25
30
10
(mA)
E
1
1
0.1
LLE
0.01
C
I,
0.001
1
0
234
V , INPUT VOLTAGE (V)
in
Fig. 5 Collector Current vs. Input Voltage
DS30381 Rev. 8 - 2
567
89
10
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in
V , INPUT VOLTAGE (V)
0.1
010203040
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Input Voltage vs. Collector Current
50
MIMD10A
© Diodes Incorporated
Page 4
Ordering Information (Note 5)
Device
MIMD10A-7-F
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Packaging Shipping
SOT-363 3000/Tape & Reel
Marking Information
NEW PRODUCT
Date Code Key
Year 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
C73
C73 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: P = 2003
M = Month ex: 9 = September
IMPORTANT NOTICE
LIFE SUPPORT
DS30381 Rev. 8 - 2
4 of 4
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MIMD10A
© Diodes Incorporated
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