Diodes MIMD10A User Manual

Features

• Epitaxial Planar Die Construction

• Built-In Biasing Resistors

• One 500mA PNP and One 100mA NPN

• Lead Free/RoHS Compliant (Note 1)

• "Green" Device (Note 3 and 4)

Mechanical Data

• Case: SOT-363

• Case Material - Molded Plastic. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020A

NEW PPRODRODUCT T UC

• Terminals: Finish - Solderable per MIL-STD-202,
Method 208

• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).

• Marking Code: C73 See Page 4

• Ordering & Date Code: See Page 4

• Terminal Connections: See Diagram

• Weight: 0.015 grams (approximate)

P/N R1 R2

MIMD10A Tr1
Tr2

0.1K
10K

10K

-

MIMD10AMIMD10A

DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT

A

C

B

2

1

E

B

2

2

H

K

J

D

SCHEMATIC DIAGRAM

E

1

SOT-363

Dim Min Max

A 0.10 0.30

C

B

B 1.15 1.35

C 2.00 2.20

C

1

D 0.65 Nominal

F 0.30 0.40

H 1.80 2.20

M

J

K 0.90 1.00

⎯

0.10

L 0.25 0.40

L

F

T

R

R

r2

1

2

R

T

1

r1

M 0.10 0.25

0°

α

All Dime sions in mmn

8°

Maximum Ratings PNP Section Tr1 @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Supply Voltage

Input Voltage

Output Current

Maximum Ratings NPN Section Tr2 @T

= 25°C unless otherwise specified

A

VCC

VIN

IO

-5 to +5 V

Characteristic Symbol Value Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Maximum Ratings - Total @T

= 25°C unless otherwise specified

A

V

CBO

V

CEO

V

EBO

IC

Characteristic Symbol Value Unit

Power Dissipation (Note 2)

Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

DS30381 Rev. 8 - 2

2. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date

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Tj, T

Pd

STG

-55 to +150 °C

-50 V

-500 mA

50 V

50 V

5 V

100 mA

200 mW

© Diodes Incorporated

MIMD10A

Electrical Characteristics PNP Section Tr1 @T

Characteristic Symbol Min Typ Max Unit Test Condition

Input Voltage

Output Voltage

Input Current

Output Current

DC Current Gain

Gain-Bandwidth Product*

* Transistor - For Reference Only

NEW PRODUCT

Electrical Characteristics NPN Section Tr2 @T

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

Collector-Emitter Saturation Voltage

V

DC Current Transfer Ratio

Gain-Bandwidth Product*

* Transistor - For Reference Only

DS30381 Rev. 8 - 2

= 25°C unless otherwise specified

A

V

V

V

l(off)

l(on)

O(on)

-0.3

⎯ ⎯

⎯

Il ⎯ ⎯

I

⎯ ⎯

O(off)

Gl

68

fT ⎯

= 25°C unless otherwise specified

A

BV

BV

BV

I

CBO

I

EBO

CE(sat)

hFE

CBO

CEO

EBO

50

50

5

⎯ ⎯

⎯ ⎯

⎯ ⎯

100 250 600

fT ⎯

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⎯ ⎯ VCC = -5V, IO = -100μA

V

-1.5

-0.1 -0.3 V

-25 mA

-0.5

VO = 0.3, IO = -100mA

IO = -100mA/-5mA

VI = -2V

μA

VCC = -50V, VI = 0V

⎯ ⎯ ⎯

200

⎯ ⎯

⎯ ⎯

⎯ ⎯

250

0.5

0.5

0.3 V

⎯

⎯

MHz

V

V

V

μA

μA

⎯

MHz

VCE = -10V, IE = -50mA, f = 100MHz

IC = 50μA

IC = 1mA

IE = 50μA

VCB = 50V

VEB = 4V

IC/IB = 10mA / 1.0mA

IC = 1mA, VCE = 5V

VCE = 10V, IE = -5mA, f = 100MHz

⎯

© Diodes Incorporated

MIMD10A