DIODES MBRD1040 Datasheet

Features
S
Guard Ring Die Construction for
·
Transient Protection Low Power Loss, High Efficiency
·
High Surge Capability
·
High Maximum Junction Temperature Rating
·
Very Low Forward Voltage Drop
·
Very Low Leakage Current
·
For Use in Low Voltage, High Frequency
·
Inverters, Free Wheeling, and Polarity Protection Applications
Plastic Material: UL Flammability
·
NEW PRODUCT
Classification Rating 94V-0
Mechanical Data
· Terminals: Solderable per MIL-STD-202,
Method 208
· Polarity: See Diagram
· Marking Information: See Page 2
MBRD1040
10A LOW VF SCHOTTKY BARRIER RECTIFIER
A
E
P
4
J
123
B
M
D
C
PIN 1
PIN 3
Note: Pins 1 & 3 must be electrically
connected at the printed circuit board.
K
L
PIN 4, BOTTOMSIDE HEAT
INK
G
H
All Dimensions in mm
Dim
A
B
C
D
E
G
H
J
K
L
M
P
DPAK
Min Max
6.3 6.7
¾ 10
0.3 0.8
2.3 Nominal
2.1 2.5
0.4 0.6
1.2 1.6
5.3 5.7
0.5 Nominal
1.3 1.8
1.0 ¾
5.1 5.5
Maximum Ratings
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Also see Figure 4)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method)
Typical Thermal Resistance Junction to Case
Typical Thermal Resistance Junction to Ambient
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics
Characteristic Symbol
Reverse Breakdown Voltage (Note 1)
Forward Voltage (Note 1)
Peak Reverse Current (Note 1)
Junction Capacitance
Notes: 1. Short duration test pulse used to minimize self-heating effect.
@ TA= 25°C unless otherwise specified
Characteristic Symbol
@ TA= 25°C unless otherwise specified
V
(BR)R
V
FM
I
RM
C
j
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
R
qJC
R
qJA
T
j
T
STG
Min Typ Max Unit
40 ¾¾V
¾
0.45
¾ ¾
¾ ¾
¾ 700 ¾ pF
¾
0.47
0.1
12.5
Value
40 V
28 V
10 A
100 A
6.0 °C/W
80 °C/W
-65 to +150 °C
-65 to +150 °C
Test Condition
= 1mA
I
R
= 8A, TS= 25°C
0.49
0.41
0.51
0.3 25
V
mA
I I I
T T
f = 1.0MHz, V
F
= 8A, TS= 125°C
F
= 10A, TS= 25°C
F
= 25°C, VR= 35V
S
= 100°C, VR= 35V
S
Unit
= 4.0V DC
R
DS30282 Rev. 3 - 2 1 of 3 MBRD1040
O
O
O
O
e
O
Ordering Information
(Note 2)
Device
MBRD1040-T
Notes: 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Packaging Shipping
DPAK 2500/Tape & Reel
Marking Information
MBRD1040 = Product type marking code
NEW PRODUCT
100
10
1
WARD CURRENT (A) R
0.1
YWW
MBRD1040
T = +150 CA°
T = +25 CA°
= Manufacturers’ code marking
YWW = Date code marking
Y = Last digit of year ex: 2 for 2002 WW = Week code 01 to 52
A)
1000
m
100
10
T = +150ºC
A
T = +100ºC
A
1
US F
F
0.0001
I , INSTANTANE
10,000
0.01
T = +75 C
°
A
0.001
0
100
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
F
200
300
400
Fig. 1 Typical Forward Characteristics
f = 1MHz
500
600
US REVERSE CURRENT (
R
I , INSTANTANE
T = +75ºC
A
0.1
0.01 0
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
10
5
15
20
25 30
Fig. 2 Typical Reverse Characteristics
12
Note 3
T = +25ºC
A
35
40
10
Note 4
ACITANCE (pF)
1000
WARD CURRENT (A) R
8
6
N CAP
4
j
C , JUNCTI
100
5
0
10
V , REVERSE VOLTAGE (V)
R
15
20
25
30
Fig. 3 Typical Junction Capacitance vs. Reverse Voltag
35
40
2
F(AV)
I , AVERAGE F
0
-25
0
T , AMBIENT TEMPERATURE (°C)
Fig. 4 DC Forward Current Derating
Note 5
125
150
100
75
50
25
A
DS30282 Rev. 3 - 2 2 of 3 MBRD1040
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