DIODES MBR870L, MBR880L, MBR890L, MBR8100L Datasheet
Features
Schottky Barrier Chip
·
Guard Ring Die Construction for
·
Transient Protection
Low Power Loss, High Efficiency
·
High Surge Capability
·
High Current Capability and Low Forward
·
Voltage Drop
For Use in Low Voltage, High Frequency
·
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material: UL Flammability
·
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
·
Terminals: Plated Leads Solderable per
·
MIL-STD-202, Method 208
· Polarity: See Diagram
· Weight: 2.24 grams (approx.)
· Mounting Position: Any
· Marking: Type Number
MBR870L - MBR8100L
8.0A SCHOTTKY BARRIER RECTIFIER
TO-220AC
L
B
C
K
12
J
R
Pin 1
D
E
N
Case
M
A
G
P
Dim Min Max
14.22 15.88
A
9.65 10.67
B
2.54 3.43
C
5.84 6.86
D
E
G
J
K
L
M
N
P
R
All Dimensions in mm
¾ 6.35
12.70 14.73
0.51 1.14
3.53Æ 4.09Æ
3.56 4.83
1.14 1.40
0.30 0.64
2.03 2.92
4.83 5.33
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1) @ T
Non-Repetitive Peak Forward Surge Current,
8.3ms single half sine-wave superimposed on rated load
(JEDEC Method)
Repetitive Peak Forward Surge Current @ t £ 5.0ms
Forward Voltage Drop @ IF= 8.0A, TC= 25°C
Peak Reverse Current @ TC= 25°C
at Rated DC Blocking Voltage @ T
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated VR)
Operating and Storage Temperature Range
@ I
= 8.0A, TC= 125°C
F
= 125°C
C
= 125°C
C
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
I
FRM
V
FM
I
RM
C
j
R
qJC
dV/dt 10,000 V/ms
T
j,TSTG
@ TA= 25°C unless otherwise specified
MBR
870L
70 80 90 100 V
49 56 63 70 V
MBR
880L
-55 to +175 °C
MBR
890L
8.0 A
230 A
850 A
0.72
0.58
0.55
7.0
350 pF
2.0 K/W
MBR
8100L
Unit
V
mA
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS30029 Rev. B-4 1 of 2 MBR870L-MBR8100L
100
g
300
g
000
g
8
10
g
6
4
2
(AV)
I , AVERAGE FWD CURRENT (A)
0
0 50 100 150
T , CASE TEMPERATURE ( C)
C
Fi
. 1 Forward Current DeratingCurve
10
1.0
F
I , INSTANTANEOUS FORWARD CURRENT (A)
0.1
T - 25 Cj°
I Pulse Width = 300 s
F
2% Duty Cycle
µ
0 0.2 0.4 0.6 0.8 1.0
°
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fi
.2 Typical Forward Characteristics
250
200
150
100
50
FSM
I , PEAK FORWARD SURGE CURRENT (A)
0
1 10 100
NUMBER OF CYCLES AT 60Hz
. 3 Max Non-Repetitive Surge Current
Fi
j
C , CAPACITANCE (pF)
4
T = 25 Cj°
f = 1.0MHz
1000
100
0.1 1.0 10 100
V , REVERSE VOLTAGE (V)
R
Fi
.4 Typical Junction Capacitance
DS30029 Rev. B-4 2 of 2 MBR870L-MBR8100L
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