DIODES MBR850, MBR835, MBR840, MBR860, MBR845 Datasheet
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Features
Schottky Barrier Chip
·
Guard Ring Die Construction for
·
Transient Protection
Low Power Loss, High Efficiency
·
High Surge Capability
·
High Current Capability and Low Forward
·
Voltage Drop
For Use in Low Voltage, High Frequency
·
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material: UL Flammability
·
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
·
Terminals: Plated Leads Solderable per
·
MIL-STD-202, Method 208
· Polarity: See Diagram
· Weight: 2.24 grams (approx.)
· Mounting Position: Any
· Marking: Type Number
MBR830 - MBR860
8.0A SCHOTTKY BARRIER RECTIFIER
TO-220AC
L
B
C
K
12
J
R
Pin 1
D
E
N
Case
M
A
G
P
Dim Min Max
14.22 15.88
A
9.65 10.67
B
2.54 3.43
C
5.84 6.86
D
E
G
J
K
L
M
N
P
R
All Dimensions in mm
¾ 6.35
12.70 14.73
0.51 1.14
3.53Æ 4.09Æ
3.56 4.83
1.14 1.40
0.30 0.64
2.03 2.92
4.83 5.33
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1) @ T
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
(JEDEC Method)
Repetitive Peak Reverse Surge Current @ t £ 2.0ms
Forward Voltage Drop @ IF= 8.0A, TC= 125°C
@ I
= 8.0A, TC= 25°C
F
@ I
= 16A, TC= 25°C
F
Peak Reverse Current @ TC= 25°C
at Rated DC Blocking Voltage @ T
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated VR)
Operating and Storage Temperature Range
= 125°C
C
= 125°C
C
V
RRM
V
RWM
V
V
R(RMS)
I
I
FSM
I
RRM
V
I
RM
C
R
dV/dt 1000 V/ms
T
j,TSTG
MBR
R
O
FM
j
qJC
@ TA= 25°C unless otherwise specified
830
30 35 40 45 50 60 V
21 24.5 28 31.5 35 42 V
MBR
835
0.57
0.70
0.84
MBR
840
MBR
845
8.0 A
150 A
1.0 A
0.1
15
250 pF
3.0 K/W
-65 to +150 °C
MBR
850
0.70
0.80
0.95
MBR
860
Unit
V
mA
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS30030 Rev. B-4 1 of 2 MBR830-MBR860
g
100
300
g
1000
g
8
10
g
MBR830 - MBR845
10
6
4
2
(AV)
I , AVERAGE FWD CURRENT (A)
0
0 50 100 150
T , CASE TEMPERATURE ( C)
C
Fi
. 1 Forward Current DeratingCurve
250
200
150
100
50
FSM
I , PEAK FORWARD SURGE CURRENT (A)
0
1 10 100
NUMBER OF CYCLES AT 60Hz
. 3 Max Non-Repetitive Surge Current
Fi
MBR850 / MBR860
1.0
T = 25 Cj°
F
I , INSTANTANEOUS FORWARD CURRENT (A)
0.1
Pulse Width = 300 s
2% Duty Cycle
µ
0 0.4 0.8 1.2 1.6
°
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
.2 Typical Forward Characteristics
Fi
100
j
C , JUNCTION CAPACITANCE (pF)
10
T = 25 C
°
j
f = 1.0MHz
0.1 1.0 10 100
V , REVERSE VOLTAGE (V)
R
Fi
.4 Typical Junction Capacitance
DS30030 Rev. B-4 2 of 2 MBR830-MBR860
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