DIODES MBR750, MBR745, MBR740, MBR735, MBR730 Datasheet
...
Features
Schottky Barrier Chip
·
Guard Ring Die Construction for
·
Transient Protection
Low Power Loss, High Efficiency
·
High Surge Capability
·
High Current Capability and Low Forward
·
Voltage Drop
For Use in Low Voltage, High Frequency
·
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material: UL Flammability
·
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
·
Terminals: Plated Leads Solderable per
·
MIL-STD-202, Method 208
· Polarity: See Diagram
· Weight: 2.3 grams (approx.)
· Mounting Position: Any
· Marking: Type Number
MBR730 - MBR760
7.5A SCHOTTKY BARRIER RECTIFIER
TO-220AC
L
B
C
K
Pin 1 Pin 2
J
R
Pin1+
Pin2-
D
E
N
+
Case
M
A
G
P
Dim Min Max
14.22 15.88
A
9.65 10.67
B
2.54 3.43
C
5.84 6.86
D
E
G
J
K
L
M
N
P
R
All Dimensions in mm
¾ 6.35
12.70 14.73
0.51 1.14
3.53Æ 4.09Æ
3.56 4.83
1.14 1.40
0.30 0.64
2.03 2.92
4.83 5.33
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1) @ T
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop @ IF= 7.5A, TC= 25°C
Peak Reverse Current @TC= 25°C
at Rated DC Blocking Voltage @ T
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated VR)
Operating and Storage Temperature Range
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
@I
= 7.5A, TC= 125°C
F
= 125°C
C
= 125°C
C
V
RRM
V
RWM
V
V
R(RMS)
I
I
FSM
V
I
RM
C
R
dV/dt 10,000 V/ms
T
j,TSTG
MBR
R
O
FM
j
qJc
@ TA= 25°C unless otherwise specified
730
30 35 40 45 50 60 V
21 24.5 28 31.5 35 42 V
MBR
735
0.55
0.70
1.0
15
MBR
740
MBR
745
7.5 A
150 A
400 pF
3.5 °C/W
-65 to +150 °C
MBR
750
0.70
0.75
1.0
50
MBR
760
Unit
V
mA
DS23007 Rev. 7 - 2 1 of 2 MBR730-MBR760
5
0
g
g
1
000
g
g
10
g
10
MBR730 - MBR745
8
10
6
4
2
(AV)
I , AVERAGE FWD CURRENT (A)
0
0 50 100 150
T , CASE TEMPERATURE ( C)
C
Fi
. 1 Fwd Current DeratingCurve
75
8.3 ms Single half
sine-wave (JEDEC method)
150
125
100
75
MBR750 - MBR760
1.0
T=25C
°
F
I , INSTANTANEOUS FWD CURRENT (A)
0.1
J
Pulse width = 300 sµ
2% duty cycle
0.2 0.4 0.6 0.8 1.0
°
V , INSTANTANEOUS FWD VOLTAGE (V)
F
Fi
.2 Typ Instantaneous Fwd Characteristics
4
1000
j
C , CAPACITANCE (pF)
50
FSM
I , PEAK FWD SURGE CURRENT (A)
25
1 10 100
NUMBER OF CYCLES AT 60Hz
. 3 Max Non-Repetitive Surge Current
Fi
T = 125 Cj°
100
1.0 10
V , REVERSE VOLTAGE (V)
R
Fi
.4 Typical Junction Capacitance
1000.1
1.0
0.1
T=75Cj°
T=25Cj°
0.01
Resistive or
0.001
R
I , INSTANTANEOUS REVERSE CURRENT (mA)
0
40 60 80 100 120 140
20
Inductive load
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
.5 Typical Reverse Characteristics
Fi
DS23007 Rev. 7 - 2 2 of 2 MBR730-MBR760
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