Diodes MBR730, MBR750 User Manual
A
g
Features
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Pb
Mechanical Data
Case: TO220AC
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish – Tin. Solderable per MIL-STD-202, Method 208
Polarity: See Diagram
Marking: Type Number
Weight: 2.3 grams (approximate)
Base
Cathode
1
13
Cathode
Package Pin Out
Confi
Anode
uration
MBR730 –MBR750
7.5A SCHOTTKY BARRIER RECTIFIER
Ordering Information (Note 3)
Part Number Case Packaging
MBR7xx* TO220AC 50/Tube
* xx = Device type, e.g. MBR750
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
MBR7xx
YYWW AB
MBR7xx = Product Type Marking Code
B = Foundry and Assembly Code
YYWW = Date Code Marking
YY = Last two digits of year (ex: 10 = 2010)
WW = Week (01 - 53)
MBR730 – MBR750
Document number: DS23007 Rev. 10 - 2
1 of 4
www.diodes.com
May 2013
© Diodes Incorporated
RAG
F
CUR
R
T
T
T
O
U
F
C
U
R
R
T
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 4) @ TC = +125°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Case (Note 4)
Voltage Rate of Change (Rated VR)
Operating Temperature Range
Storage Temperature Range
MBR730 –MBR750
MBR
730
V
V
RRM
RWM
30 40 50 V
VR
V
R(RMS)
21 28 35 V
IO
I
FSM
R
θJC
dV/dt 10,000 V/µs
TJ
T
STG
MBR
740
7.5 A
150 A
3.5 °C/W
-55 to +150 °C
-55 to +175 °C
MBR
750
Unit
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol
Forward Voltage Drop @ IF = 7.5A, TJ = +25°C
(Note 6) @ IF = 7.5A, TJ = +125°C
@ IF = 15A, TJ = +25°C
@ IF = 15A, TJ = +125°C
Peak Reverse Current @ TJ = +25°C
at Rated DC Blocking Voltage @ TJ = +125°C
Typical Total Capacitance (Note 5)
Notes: 4. Thermal resistance junction to case mounted on heatsink.
5. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
6. Short duration pulse test used to minimize self-heating effect.
10
(A)
8
EN
6
WD
E
4
2
(AV)
I, AVE
0
050100150
T , CASE TEMPERATURE ( C)
C
Fig. 1 Fwd Current Derating Curve
°
VFM
IRM
CT
(A)
EN
WD
S
ANE
AN
F
I, INS
MBR
730
MBR
740
—
0.57
0.84
0.72
0.1
15
400 pF
100
10
1.0
0.1
0.20.1 0.4
V , INSTANTANEOUS FWD VOLTAGE (V)
F
Fig. 2 Typ Instantaneous Fwd Characteristics
0.50.3
0.6 0.8
MBR
750
0.75
0.65
—
—
0.5
50
Unit
V
mA
0.90.7
1.0
MBR730 – MBR750
Document number: DS23007 Rev. 10 - 2
2 of 4
www.diodes.com
May 2013
© Diodes Incorporated
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