DIODES MBR6035PT, MBR6045PT, MBR6040PT Datasheet

Features

Schottky Barrier Chip

·

Guard Ring Die Construction for

·

Transient Protection
Low Power Loss, High Efficiency

·

High Surge Capability

·

High Current Capability and Low Forward

·

Voltage Drop
For Use in Low Voltage, High Frequency

·

Inverters, Free Wheeling, and Polarity
Protection Application

Plastic Material: UL Flammability

·

Classification Rating 94V-0

Mechanical Data

Case: Molded Plastic

·

Terminals: Plated Leads Solderable per

·

MIL-STD-202, Method 208

· Polarity: As Marked on Body

· Weight: 5.6 grams (approx.)

· Mounting Position: Any

· Marking: Type Number

MBR6030PT - MBR6045PT

60A SCHOTTKY BARRIER RECTIFIER

TO-3P

Dim Min Max

3.20 3.50

A

S

R

P*

*2 Places

N

A

H

J

K

L

Q

G

M

M

B

C

D

E

All Dimensions in mm

4.59 5.16

B

20.80 21.30

C

19.70 20.20

D

2.10 2.40

E

0.51 0.76

G

15.90 16.40

H

1.70 2.70

J

3.10Æ 3.30Æ

K

3.50 4.51

L

5.20 5.70

M

1.12 1.22

N

1.93 2.18

P

2.97 3.22

Q

11.70 12.80

R

S

4.30 Typical

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Characteristic Symbol

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current @ TC= 125°C

Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)

Forward Voltage Drop @ IF= 30A, TC= 25°C

Peak Reverse Current @ TC= 25°C
at Rated DC Blocking Voltage @ T

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance Junction to Case (Note 1)

Operating and Storage Temperature Range

Notes: 1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

@ I

= 30A, TC= 125°C

F

@ I

= 60A, TC= 25°C

F

(Note 1)

= 100°C

C

V
V

V

R(RMS)

I

V

I

R

T

j,TSTG

RRM
RWM

V

R

I

O

FSM

FM

RM

C

qJc

j

@ TA= 25°C unless otherwise specified

MBR

6030PT

30 35 40 45 V

21 25 28 32 V

MBR

6035PT

-55 to +150 °C

MBR

6040PT

60 A

500 A

0.62

0.55

0.75

1.0
50

650 pF

1.0 K/W

MBR

6045PT

Unit

V

mA

DS30053 Rev. B-2 1 of 2 MBR6030PT - MBR6045PT

O

S

G

C

(

)

O

O

g

70

80

60

50

100

10

40

30

20

10

O

I , AVERAGE RECTIFIED CURRENT (A)

0

0 50 100 150

T , CASE TEMPERATURE ( C)

C

Fi

. 1 Forward Current DeratingCurve

600

A

8.3ms single half-sine-wave
JEDEC method

500

URRENT

400

E

300

UR

200

100

FSM

I , PEAK FWD

US FWD CURRENT (A)

1.0

T = 25 C

°

F

I , INSTANTANE

0.1

j

Pulse width = 300 s

2% duty cycle

µ

0.20 0.4 0.6 0.8 1.0

°

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

Fig. 2 Typical Forward Characteristics

10000

T = 25 Cj°

ACITANCE (pF)

1000

N CAP

j

C , JUNCTI

0

1 10 100

NUMBER OF CYCLES AT 60Hz

Fig. 3 Max Non-Repetitive Surge Current

100

0.1 1.0 10 100

V , REVERSE VOLTAGE (V)

Fig. 4 Typical Junction Capacitance per Element

R

100

T = 100 Cj°

10

1.0

US REVERSE CURRENT (mA)

0.1

T = 25 C

j

°

R

I , INSTANTANE

0.01
0204060

30 5010

PEAK REVERSE VOLTAGE (V)

Fig. 5 Typical Reverse Characteristics

DS30053 Rev. B-2 2 of 2 MBR6030PT - MBR6045PT