Diodes MBR6030PT User Manual

Features

Schottky Barrier Chip

·

Guard Ring Die Construction for Transient Protection

·

Low Power Loss, High Efficiency

·

High Surge Capability

·

High Current Capability and Low Forward Voltage Drop

·

For Use in Low Voltage, High Frequency Inverters, Free

·

Wheeling, and Polarity Protection Application

Lead Free Finish, RoHS Compliant (Note 3)

·

Mechanical Data

Case: TO-3P

·

Case Material: Molded Plastic. UL Flammability

·

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

·

Terminals: Finish - Bright Tin. Plated Leads Solderable per

·

MIL-STD-202, Method 208

Polarity: As Marked on Body

·

Ordering Information: See Last Page

·

Marking: Type Number

·

Weight: 5.6 grams (approximate)

·

MBR6030PT - MBR6045PT

60A SCHOTTKY BARRIER RECTIFIER

TO-3P

Dim Min Max

1.88 2.08

A

H

S

J

B

C

R

P

Q

N

K

L

G

D

E

A

4.68 5.36

B

20.63 22.38

C

18.5 21.5

D

2.1 2.4

E

0.51 0.76

G

15.38 16.25

H

1.90 2.70

J

2.9Æ 3.65Æ

K

3.78 4.50

L

5.2 5.7

M

0.89 1.53

N

1.82 2.46

P

2.92 3.23

Q

11.70 12.84

R

¾ 6.10

S

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Characteristic Symbol

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current @ TC= 125°C

Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)

Forward Voltage Drop @ IF= 30A, TC= 25°C

Peak Reverse Current @ TC= 25°C
at Rated DC Blocking Voltage @ T

Typical Total Capacitance (Note 2)

Typical Thermal Resistance Junction to Case (Note 1)

Operating and Storage Temperature Range

Notes: 1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see

@ I

= 30A, TC= 125°C

F

@ I

= 60A, TC= 25°C

F

(Note 1)

= 100°C

C

V
V

V

R(RMS)

I

V

I

R

T

j,TSTG

RRM
RWM

V

R

I

O

FSM

FM

RM

C

T

qJC

@ TA= 25°C unless otherwise specified

MBR

6030PT

30 35 40 45 V

21 25 28 32 V

MBR

6035PT

-55 to +150 °C

EU Directive Annex Notes 5 and 7.

MBR

6040PT

60 A

500 A

0.62

0.55

0.75

1.0
50

650 pF

1.0 °C/W

MBR

6045PT

Unit

V

mA

DS30053 Rev. 4 - 2 1 of 3 MBR6030PT - MBR6045PT

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ã Diodes Incorporated

O

O

C

C

C

O

g

70

80

60

50

100

10

40

30

20

O

10

I , AVERAGE FORWARD CURRENT (A)

0

0 50 100 150

T , CASE TEMPERATURE ( C)

C

. 1 Forward Current DeratingCurve

Fi

600

8.3ms single half-sine-wave
JEDEC method

500

400

300

RWARD SURGE CURRENT (A)

200

US FWD CURRENT (A)

1.0

F

I , INSTANTANE

0.1

0.20 0.4 0.6 0.8 1.0

°

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

Fig. 2 Typical Forward Characteristics

10000

T=25Cj°

ITANCE (pF)

1000

APA
,

T

100

FSM

I , PEAK F

0

1 10 100

NUMBER OF CYCLES AT 60Hz

Fig. 3 Max Non-Repetitive Surge Current

100

0.1 1.0 10 100

V , REVERSE VOLTAGE (V)

Fig. 4 Typical Total Capacitance per Element

R

100

T = 100 Cj°

10

1.0

US REVERSE CURRENT (mA)

T=25C

°

0.1

j

R

I , INSTANTANE

0.01
0204060

30 5010

PEAK REVERSE VOLTAGE (V)

Fig. 5 Typical Reverse Characteristics

DS30053 Rev. 4 - 2 2 of 3 MBR6030PT - MBR6045PT

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