DIODES MBR4040PT, MBR4045PT, MBR4060PT, MBR4050PT, MBR4035PT Datasheet
Features
Schottky Barrier Chip
·
Guard Ring Die Construction for
·
Transient Protection
Low Power Loss, High Efficiency
·
High Surge Capability
·
High Current Capability and Low Forward
·
Voltage Drop
For Use in Low Voltage, High Frequency
·
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
·
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
·
Terminals: Plated Leads Solderable per
·
MIL-STD-202, Method 208
· Polarity: As Marked on Body
· Marking: Type Number
· Weight: 5.6 grams (approx.)
· Mounting Position: Any
MBR4030PT - MBR4060PT
40A SCHOTTKY BARRIER RECTIFIER
TO-3P
Dim Min Max
3.20 3.50
A
4.59 5.16
B
20.80 21.30
C
19.70 20.20
D
2.10 2.40
E
0.51 0.76
G
15.90 16.40
H
1.70 2.70
J
3.10Æ 3.30Æ
K
3.50 4.51
L
5.20 5.70
M
1.12 1.22
N
1.93 2.18
P
2.97 3.22
Q
11.70 12.80
R
S
All Dimensions in mm
4.30 Typical
S
R
P*
*2 Places
N
A
H
J
K
L
Q
G
M
M
B
C
D
E
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
O
FM
qJc
MBR
4030PT
R
j
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @ TC= 125°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop @ IF= 20A, TC= 25°C
Peak Reverse Current @ TC= 25°C
at Rated DC Blocking Voltage @ T
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated VR)
Operating and Storage Temperature Range
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
@ I
= 20A, TC= 125°C
F
(Note 1)
= 125°C
C
V
RRM
V
RWM
V
V
R(RMS)
I
I
FSM
V
I
RM
C
R
dV/dt 10,000 V/ms
T
j,TSTG
@ TA= 25°C unless otherwise specified
MBR
4035PT
30 35 40 45 50 60 V
21 24.5 28 31.5 35 42 V
0.70
0.60
MBR
4040PT
MBR
4045PT
40 A
400 A
1.0
100
1100 pF
1.4 K/W
-65 to +150 °C
MBR
4O50PT
0.80
0.70
MBR
4060PT
Unit
mA
V
DS23019 Rev. E-2 1 of 2 MBR4030PT - MBR4060PT
g
)
100
g
00
000
g
g
10
g
5
0
40
30
20
10
(AV)
I , AVERAGE FWD CURRENT (A)
0
0 50 100 150
T , CASE TEMPERATURE (°C)
C
Fi
. 1 Fwd Current DeratingCurve
4
8.3 ms Single half
sine-wave (JEDEC method)
300
10
1.0
F
I , INSTANTANEOUS FORWARD CURRENT (A)
0.1
0.2 0.3 0.4
4
1000
MBR 4030PT - MBR4045PT
MBR4050PT - MBR4060PT
0.6 0.7
0.5
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
.2 Typical Forward Characteristics(per element
Fi
0.8
T = 25°C
J
f=1Mhz
0.9
FSM
I , PEAK FWD SURGE CURRENT (A)
200
100
1
10
100
NUMBER OF CYCLES AT 60Hz
. 3 Max Non-Repetitive Surge Current
Fi
T = 125°C
C
j
C , CAPACITANCE (pF)
100
0.1
110
V , REVERSE VOLTAGE (V)
R
.4 Typical Junction Capacitance
Fi
100
1.0
R
I , INSTANTANEOUS REVERSE CURRENT (µA)
0.1
0.01
0.001
0
20
T = 75°C
C
T = 25°C
C
T = 25°C
j
40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
.5 Typical Reverse Characteristics
Fi
DS23019 Rev. E-2 2 of 2 MBR4030PT - MBR4060PT
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