Diodes MBR4030PT User Manual

Features

Schottky Barrier Chip

·

Guard Ring Die Construction for Transient Protection

·

Low Power Loss, High Efficiency

·

High Surge Capability

·

High Current Capability and Low Forward Voltage Drop

·

For Use in Low Voltage, High Frequency Inverters, Free

·

Wheeling, and Polarity Protection Applications

Lead Free Finish, RoHS Compliant (Note 3)

·

Mechanical Data

Case: TO-3P

·

Case Material: Molded Plastic. UL Flammability

·

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

·

Terminals: Finish - Bright Tin. Plated Leads Solderable per

·

MIL-STD-202, Method 208

Polarity: As Marked on Body

·

Ordering Information: See Last Page

·

Marking: Type Number

·

Weight: 5.6 grams (approximate)

·

MBR4030PT - MBR4060PT

40A SCHOTTKY BARRIER RECTIFIER

TO-3P

Dim Min Max

1.88 2.08

A

4.68 5.36

A

H

S

J

B

C

R

P

Q

N

K

L

G

D

E

B

20.63 22.38

C

18.5 21.5

D

2.1 2.4

E

0.51 0.76

G

15.38 16.25

H

1.90 2.70

J

2.9Æ 3.65Æ

K

3.78 4.50

L

5.2 5.7

M

0.89 1.53

N

1.82 2.46

P

2.92 3.23

Q

11.70 12.84

R

¾ 6.10

S

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

O

FM

qJC

MBR

4030PT

R

T

Characteristic Symbol

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current @ TC= 125°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)

Forward Voltage Drop @ IF= 20A, TC= 25°C

Peak Reverse Current @ TC= 25°C
at Rated DC Blocking Voltage @ T

Typical Total Capacitance (Note 2)

Typical Thermal Resistance Junction to Case (Note 1)

Voltage Rate of Change (Rated VR)

Operating and Storage Temperature Range

Notes: 1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see

@ I

= 20A, TC= 125°C

F

(Note 1)

= 125°C

C

V

RRM

V

RWM

V

V

R(RMS)

I

I

FSM

V

I

RM

C

R

dV/dt 10,000 V/ms

T

j,TSTG

@ TA= 25°C unless otherwise specified

MBR

4035PT

30 35 40 45 50 60 V

21 24.5 28 31.5 35 42 V

MBR

4040PT

0.70

0.60

EU Directive Annex Notes 5 and 7.

MBR

4045PT

40 A

400 A

1.0

100

1100 pF

1.4 °C/W

-65 to +150 °C

MBR

4050PT

0.80

0.70

MBR

4060PT

Unit

mA

V

DS23019 Rev. 8 - 2 1 of 3 MBR4030PT - MBR4060PT

www.diodes.com

ã Diodes Incorporated

g

)

100

g

00

000

g

g

10

g

5

0

(AV)

I , AVERAGE FORWARD CURRENT (A)

40

30

20

10

0

0 50 100 150

T , CASE TEMPERATURE (°C)

C

. 1 Forward Current DeratingCurve

Fi

4

8.3 ms Single half
sine-wave (JEDEC method)

300

10

1.0

F

I , INSTANTANEOUS FORWARD CURRENT (A)

0.1

0.2 0.3 0.4

4

1000

MBR 4030PT - MBR4045PT

MBR4050PT - MBR4060PT

0.6 0.7

0.5

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

.2 Typical Forward Characteristics(per element

Fi

0.8

T=25°C

J

f=1Mhz

0.9

FSM

I , PEAK FORWARD SURGE CURRENT (A)

200

100

1

10

100

NUMBER OF CYCLES AT 60Hz

Fi

. 3 Max Non-Repetitive Surge Current

T = 125°C

C

T

C , CAPACITANCE (pF)

100

0.1

110

V , REVERSE VOLTAGE (V)

R

.4 Typical Total Capacitance

Fi

100

1.0

0.1

0.01

0.001

0

20

T=75°C

C

T = 25°C

C

T=25°C

j

40 60 80 100 120 140

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fi

.5 Typical Reverse Characteristics

DS23019 Rev. 8 - 2 2 of 3 MBR4030PT - MBR4060PT

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