DIODES MBR3040PT, MBR3035PT, MBR3060PT, MBR3045PT Datasheet
Features
Schottky Barrier Chip
·
Guard Ring Die Construction for
·
Transient Protection
Low Power Loss, High Efficiency
·
High Surge Capability
·
High Current Capability and Low Forward
·
Voltage Drop
For Use in Low Voltage, High Frequency
·
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
·
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
·
Terminals: Plated Leads Solderable per
·
MIL-STD-202, Method 208
· Polarity: As Marked on Body
· Marking: Type Number
· Weight: 5.6 grams (approx.)
· Mounting Position: Any
MBR3030PT - MBR3060PT
30A SCHOTTKY BARRIER RECTIFIER
TO-3P
Dim Min Max
3.20 3.50
A
4.59 5.16
B
20.80 21.30
C
19.70 20.20
D
2.10 2.40
E
0.51 0.76
G
15.90 16.40
H
1.70 2.70
J
3.10Æ 3.30Æ
K
3.50 4.51
L
5.20 5.70
M
1.12 1.22
N
1.93 2.18
P
2.97 3.22
Q
11.70 12.80
R
S
All Dimensions in mm
4.30 Typical
S
R
P*
*2 Places
N
A
H
J
K
L
Q
G
M
M
B
C
D
E
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
O
FM
qJc
MBR
3030PT
R
j
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @ TC= 125°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop @ IF= 20A, TC= 25°C
per element (Note 3) @ I
Peak Reverse Current @ TC= 25°C
at Rated DC Blocking Voltage, per element @ T
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated VR)
Operating and Storage Temperature Range
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Pulse width £300 ms, duty cycle £2%.
= 20A, TC= 125°C
F
(Note 1)
= 125°C
C
V
RRM
V
RWM
V
V
R(RMS)
I
I
FSM
V
I
RM
C
R
dV/dt 10,000 V/µs
T
j,TSTG
@ TA= 25°C unless otherwise specified
MBR
3035PT
30 35 40 45 50 60 V
21 24.5 28 31.5 35 42 V
MBR
3040PT
0.65
0.60
1.0
60
1.4 2.0 K/W
MBR
3045PT
30 A
200 A
700 pF
-65 to +150 °C
MBR
3050PT
0.75
0.65
5.0
100
MBR
3060PT
Unit
mA
V
DS23017 Rev. E-2 1 of 2 MBR3030PT - MBR3060PT
g
100
300
g
000
g
g
100
g
24
30
18
MBR 3030PT - MBR 3045PT
10
FSM
I , PEAK FWD SURGE CURRENT (A)
I , AVERAGE FWD CURRENT (A)
12
6
(AV)
0
0 50 100 150
T , CASE TEMPERATURE (°C)
C
Fi
. 1 Fwd Current DeratingCurve
8.3ms Single half-wave
250
200
150
100
50
T = 25°C
j
JEDEC Method
I , INSTANTANEOUS FORWARD CURRENT (A)
j
C , CAPACITANCE (pF)
1.0
F
0.1
0 0.2 0.4
V , INSTANTANEOUS F0RWARD VOLTAGE (V)
F
4
1000
MBR 3050PT - MBR 3060PT
T = 25°C
j
Pulse width = 300µs
2% duty cycle
0.6 0.8
Fi
.2 Typical Forward Characteristics
T = 25°C
j
f = 1MHz
0
1
10
100
NUMBER OF CYCLES AT 60Hz
. 3 Max Non-Repetitive Surge Current
Fi
T = 125°C
10
1.0
j
T = 75°C
100
0.1 1.0 10 100
V , REVERSE VOLTAGE (V)
R
Fi
.4 Typical Junction Capacitance
j
0.1
T = 25°C
j
0.01
R
I , INSTANTANEOUS REVERSE CURRENT (mA)
0
40 60 80 100 120 140
20
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
.5 Typical Reverse Characteristics
Fi
DS23017 Rev. E-2 2 of 2 MBR3030PT - MBR3060PT
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