Diodes MBR3030PT User Manual

Features

M

M

Guard Ring Die Construction for

·

Transient Protection

Low Power Loss, High Efficiency

·

High Surge Capability

·

High Current Capability and Low Forward Voltage Drop

·

For Use in Low Voltage, High Frequency Inverters, Free

·

Wheeling, and Polarity Protection Applications

Lead Free Finish, RoHS Compliant (Note 4)

·

Mechanical Data

Case: TO-3P

·

Case Material: Molded Plastic. UL Flammability

·

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

·

Terminals: Finish ¾ Bright Tin. Plated Leads Solderable

·

per MIL-STD-202, Method 208

Polarity: As Marked on Body

·

Ordering Information: See Last Page

·

Marking: Type Number

·

Weight: 5.6 grams (approximate)

·

MBR3030PT - MBR3060PT

30A SCHOTTKY BARRIER RECTIFIER

TO-3P

Dim Min Max

1.88 2.08

A

4.68 5.36

A

H

S

J

B

C

R

P

Q

N

K

L

G

D

E

B

20.63 22.38

C

18.5 21.5

D

2.1 2.4

E

0.51 0.76

G

15.38 16.25

H

1.90 2.70

J

2.9Æ 3.65Æ

K

3.78 4.50

L

5.2 5.7

M

0.89 1.53

N

1.82 2.46

P

2.92 3.23

Q

11.70 12.84

R

¾ 6.10

S

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

O

FM

qJc

MBR

3030PT

R

T

j

Characteristic Symbol

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current @ TC= 125°C
Total Device (See Fig. 1)

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)

Forward Voltage Drop @ IF= 20A, TC= 25°C
per element (Note 3) @ I

Peak Reverse Current @ TC= 25°C
at Rated DC Blocking Voltage, per element @ T

Typical Total Capacitance (Note 2)

Typical Thermal Resistance Junction to Case (Note 1)

Voltage Rate of Change (Rated VR)

Operating Temperature Range

Storage Temperature Range

Notes: 1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. Pulse width £300 ms, duty cycle £2%.

4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see

= 20A, TC= 125°C

F

@ I

= 30A, TC= 25°C

F

@ I

= 30A, TC= 125°C

F

= 125°C

C

V

RRM

V

RWM

V

V

R(RMS)

I

I

FSM

V

I

RM

C

R

dV/dt 10,000 V/µs

T

T

STG

@ TA= 25°C unless otherwise specified

MBR

3035PT

30 35 40 45 50 60 V

21 24.5 28 31.5 35 42 V

MBR

3040PT

¾

0.60

0.76

0.72

1.0
60

EU Directive Annex Notes 5 and 7.

MBR

3045PT

30 A

200 A

500 pF

1.4 °C/W

-65 to +150 °C

-65 to +175 °C

MBR

3050PT

0.75

0.65

0.80

0.75

5.0

100

MBR

3060PT

Unit

mA

V

DS23017 Rev. 8 - 2 1 of 3 MBR3030PT - MBR3060PT

www.diodes.com

ã Diodes Incorporated

g

100

300

g

000

g

g

100

g

24

30

18

MBR 3030PT - MBR 3045PT

10

FSM

I , PEAK FORWARD SURGE CURRENT (A)

12

6

O

I , AVERAGE FORWARD CURRENT (A)

0

0 50 100 150

T , CASE TEMPERATURE (°C)

C

. 1 Forward Current DeratingCurve, total device

Fi

T = 25°C

j

8.3ms Single half-wave

250

JEDEC Method

200

150

100

50

0

1

10

NUMBER OF CYCLES AT 60Hz

Fi

. 3 Max Non-Repetitive Surge Current

100

F

I , INSTANTANEOUS FORWARD CURRENT (A)

T

C , CAPACITANCE (pF)

MBR 3050PT - MBR 3060PT

1.0

T=25°C

j

2% duty cycle

0.1

00.20.4

V , INSTANTANEOUS F0RWARD VOLTAGE (V)

F

.2 Typical Forward Characteristics, per element

Fi

0.6 0.8

4

1000

100

0.1 1.0 10 100

V , REVERSE VOLTAGE (V)

R

.4 Typical Total Capacitance

Fi

T=25°C

j

f=1MHz

T = 125°C

10

j

1.0

T = 75°C

j

0.1

T = 25°C

j

0.01

R

I , INSTANTANEOUS REVERSE CURRENT (mA)

0

40 60 80 100 120 140

20

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fi

.5 Typical Reverse Characteristics, per element

DS23017 Rev. 8 - 2 2 of 3 MBR3030PT - MBR3060PT

www.diodes.com