DIODES MBR2560CT, MBR2550CT, MBR2545CT Datasheet
Features
Schottky Barrier Chip
·
Guard Ring Die Construction for
·
Transient Protection
Low Power Loss, High Efficiency
·
High Surge Capability
·
High Current Capability and Low Forward
·
Voltage Drop
For Use in Low Voltage, High Frequency
·
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
·
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
·
Terminals: Plated Leads Solderable per
·
MIL-STD-202, Method 208
· Polarity: As Marked on Body
· Weight: 2.24 grams (approx.)
· Mounting Position: Any
· Marking: Type Number
MBR2535CT - MBR2560CT
30A SCHOTTKY BARRIER RECTIFIER
L
B
C
K
123
J
HH
Pin1+
Pin2Pin3+
D
E
N
Case
M
A
G
P
+
TO-220AB
Dim Min Max
14.22 15.88
A
9.65 10.67
B
2.54 3.43
C
5.84 6.86
D
E
G
H
J
K
L
M
N
P
All Dimensions in mm
¾ 6.35
12.70 14.73
2.29 2.79
0.51 1.14
3.53Æ 4.09Æ
3.56 4.83
1.14 1.40
0.30 0.64
2.03 2.92
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol MBR2535CT MBR2545CT MBR2550CT MBR2560CT Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @ TC= 130°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Peak Repetitive Reverse Surge Current (Note 3)
Forward Voltage Drop @ IF= 15.0A, TC= 25°C
@ I
= 15.0A, TC= 125°C
F
@ I
= 30.0A, TC= 25°C
F
@ I
= 30.0A, TC= 125°C
F
Peak Reverse Current @ TC= 25°C
at Rated DC Blocking Voltage @ T
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
3. 2.0ms pulse width, f = 1.0KHz.
= 125°C
C
V
V
V
R(RMS)
I
I
RRM
V
I
R
T
j,TSTG
RRM
RWM
V
R
I
O
FSM
FM
RM
C
qJC
j
@ TA= 25°C unless otherwise specified
35 45 50 60 V
25 32 35 42 V
30 A
150 A
1.0 0.5 A
¾
¾
0.82
0.73
0.2
40
750 500 pF
1.5 °C/W
-65 to +150 °C
0.75
0.65
¾
¾
1.0
50
mA
V
DS31036 Rev. D-2 1 of 2 MBR2535CT - MBR2560CT
g
0
150
g
10000
g
24
30
g
5
T = 25 Cj°
I Pulse Width = 300 s
F
10
µ
18
12
6
(AV)
I , AVERAGE RECTIFIED CURRENT (A)
0
0 50 100
T , CASE TEMPERATURE ( C)
C
Fi
. 1 Forward DeratingCurve
100
150
°
8.3 ms single half-sine-wave
JEDEC method
F
I , INSTANTANEOUS FORWARD CURRENT (A)
T = 150 Cj°
T = 25 Cj°
1.0
0.1
MBR2535CT & MBR2545CT
MBR2550CT & MBR2560CT
0.01
0.2 0.4 0.6 0.8 1.0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fi
.2 Typical Forward Characteristics
1000
T=25C
°
j
f = 1.0MHz
50
j
C , JUNCTION CAPACITANCE (pF)
FSM
I , PEAK FORWARD SURGE CURRENT (A)
0
1 10 100
100
0.1 1.0 10 100
NUMBER OF CYCLES AT 60Hz
. 3 Maximum Non-Repetitive Surge Current
Fi
MBR2535CT & MBR2545CT
MBR2550CT & MBR2560CT
V , REVERSE VOLTAGE (V)
R
Fi
.4 Typical Junction Capacitance
DS31036 Rev. D-2 2 of 2 MBR2535CT - MBR2560CT
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