Diodes MBR2535CT User Manual

Features

Schottky Barrier Chip

·

Guard Ring Die Construction for

·

Transient Protection

Low Power Loss, High Efficiency

·

High Surge Capability

·

High Current Capability and Low Forward Voltage Drop

·

For Use in Low Voltage, High Frequency Inverters, Free

·

Wheeling, and Polarity Protection Applications

Lead Free Finish, RoHS Compliant (Note 4)

·

Mechanical Data

Case: TO-220AB

·

Case Material: Molded Plastic. UL Flammability

·

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

·

Terminals: Finish – Bright Tin. Solderable per

·

MIL-STD-202, Method 208

Polarity: As Marked on Body

·

Marking: Type Number

·

Weight: 2.24 grams (approx.)

·

MBR2535CT - MBR2560CT

30A SCHOTTKY BARRIER RECTIFIER

TO-220AB

L

B

C

K

123

J

HH

Pin 1
Pin 2

Pin 3

D

E

N

Case

M

A

G

P

Dim Min Max

14.48 15.75

A

10.00 10.40

B

2.54 3.43

C

5.90 6.40

D

2.80 3.93

E

12.70 14.27

G

2.40 2.70

H

0.69 0.93

J

3.54 3.78

K

4.07 4.82

L

1.15 1.39

M

0.30 0.50

N

2.04 2.79

P

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Characteristic Symbol MBR2535CT MBR2545CT MBR2550CT MBR2560CT Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current @ TC= 130°C

Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)

Peak Repetitive Reverse Surge Current (Note 3)

Forward Voltage Drop @ IF= 15.0A, TC= 25°C

Peak Reverse Current @ TC= 25°C
at Rated DC Blocking Voltage @ T

Typical Total Capacitance (Note 2)

Typical Thermal Resistance Junction to Case (Note 1)

Operating and Storage Temperature Range

Notes: 1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.

3. 2.0ms pulse width, f = 1.0KHz.

4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see

@ I

= 15.0A, TC= 125°C

F

@ I

= 30.0A, TC= 25°C

F

@ I

= 30.0A, TC= 125°C

F

= 125°C

C

V
V

V

R(RMS)

I

I

RRM

V

I

R

T

j,TSTG

RRM
RWM

V

R

I

O

FSM

FM

RM

C

T

qJC

@ TA= 25°C unless otherwise specified

35 45 50 60 V

25 32 35 42 V

30 A

150 A

1.0 0.5 A

¾
¾

0.82

0.73

0.2
40

750 500 pF

1.5 °C/W

-65 to +150 °C

EU Directive Annex Notes 5 and 7.

0.75

0.65

¾
¾

1.0
50

mA

V

DS31036 Rev. 6 - 2 1 of 2 MBR2535CT - MBR2560CT

www.diodes.com

ã Diodes Incorporated

g

5

0

150

g

10000

g

)

30

g

24

18

12

6

(AV)

I , AVERAGE RECTIFIED CURRENT (A)

0

0 50 100

T , CASE TEMPERATURE ( C)

C

. 1 Forward DeratingCurve

Fi

100

150

°

8.3 ms single half-sine-wave
JEDEC method

F

I , INSTANTANEOUS FORWARD CURRENT (A)

10

T = 150 Cj°

T=25Cj°

1.0

0.1

MBR2535CT & MBR2545CT
MBR2550CT & MBR2560CT

0.01

0.2 0.4 0.6 0.8 1.0

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

.2 Typical Forward Characteristics

Fi

1000

T=25C

°

j

f = 1.0MHz

50

FSM

I , PEAK FORWARD SURGE CURRENT (A)

0

1 10 100

NUMBER OF CYCLES AT 60Hz

Fi

. 3 Maximum Non-Repetitive Surge Current

Ordering Information

Device

MBR25xxCT*

Notes: 4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf.

* xx = Device type, e.g. MBR2545CT

(Note 5)

Packaging Shipping

TO-220AB 50/Tube

T

C , TOTAL CAPACITANCE (pF)

MBR2535CT & MBR2545CT

100

MBR2550CT & MBR2560CT

0.1 1.0 10 100

V , REVERSE VOLTAGE (V)

R

.4 Typical Total Capacitance(per element

Fi

DS31036 Rev. 6 - 2 2 of 2 MBR2535CT - MBR2560CT

www.diodes.com