DS30067 Rev. 2 - 2 1 of 2 LLSD101A - 101C
LLSD101A - 101C
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
· Low Forward Voltage Drop
· Guard Ring Construction for Transient
Protection
· Fast Reverse Recovery Time
· Low Reverse Capacitance
· Case: MiniMELF, Glass
· Terminals: Solderable per MIL-STD-202,
Method 208
· Marking: Cathode Band Only
· Polarity: Cathode Band
· Weight: 0.05 grams (approx.)
Mechanical Data
Maximum Ratings
@ TA = 25°C unless otherwise specified
Note: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic Symbol LLSD101A LLSD101B LLSD101C Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
60 50 40
V
RMS Reverse Voltage
V
R(RMS)
42 35 28
V
Forward Continuous Current (Note 1)
I
FM
15
mA
Non-Repetitive Peak Forward Surge Current @ t £ 1.0s
@ t = 10ms
I
FSM
50
2.0
mA
A
Power Dissipation (Note 1)
P
d
400 mW
Thermal Resistance, Junction to Ambient Air (Note 1)
R
qJA
375 °C/W
Operating Temperature Range
T
j
-55 to +125 °C
Storage Temperature Range
T
STG
-55 to +150 °C
Characteristic Symbol Min Max Unit Test Condition
Forward Voltage Drop (Note 2) LLSD101A
LLSD101B
LLSD101C
LLSD101A
LLSD101B
LLSD101C
V
F
¾
0.41
0.40
0.39
1.00
0.95
0.90
V
IF = 1.0mA
IF = 1.0mA
IF = 1.0mA
IF = 15mA
IF = 15mA
IF = 15mA
Reverse Current (Note 2) LLSD101A
LLSD101B
LLSD101C
I
R
¾ 200 nA
VR = 50V
VR = 40V
VR = 30V
Total Capacitance LLSD101A
LLSD101B
LLSD101C
C
T
¾
2.0
2.1
2.2
pF
VR = 0V, f = 1.0MHz
Reverse Recovery Time
t
rr
¾ 1.0 ns
IF = IR = 5.0mA,
I
rr
= 0.1 x IR, RL = 100W
MiniMELF
Dim Min Max
A
3.30 3.70
B
1.30 1.60
C
0.28 0.50
All Dimensions in mm