Diodes LL4148, LL4448 Schematics

W

)

NOT RECOMMENDED FOR NEW DESIGN

USE 1N4148W / 1N4448

FAST SWITCHING SURFACE MOUNT DIODE

Features and Benefits

• Fast Switching Speed

• Surface Mount Package Ideally Suited for Automatic Insertion

• General Purpose Rectification

• Silicon Epitaxial Planar Construction

• Lead Free Finish, RoHS Compliant (Note 1)

Mechanical Data

• Case: MiniMELF

• Case Material: Glass: UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Sn97.5Ag2.5. Solderable per MIL-STD-202,

Method 208

• Polarity: Cathode Band

• Marking: Cathode Band Only

• Weight: 0.05 grams (approximate)

Ordering Information (Note 2)

Part Number Case Packaging

LL4148-13 MiniMELF 10K/Tape & Reel, 13-inch

LL4448-7 MiniMELF 2.5K/Tape & Reel, 7-inch

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2). All applicable RoHS exemptions applied.

Maximum Ratings @T

Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage
Forward Continuous Current (Note 3)
Average Rectified Output Current (Note 3)

Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 3)

Derate above 25°C
Thermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage Temperature Range

2. For Packaging Details, go to our website at http://www.diodes.com.

= 25°C unless otherwise specified

A

Characteristic Symbol LL4148 LL4448 Unit

V

V

RRM

V

RWM

V

V

R(RMS

I

FM

I
@ t = 1.0s
@ t = 1.0μs 2.0

I

FSM

P

R

, T

T

J

RM

O

θJA

R

D

STG

300 500 mA

LL4148 / LL4448

100 V

75 V

53 V

150 mA

1.0

500

1.68
300 K/W

-65 TO +175 °C

A

mW

mW/°C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Condition

LL4148

Forward Voltage

LL4448 0.62 0.72

V

F

LL4448 - 1.0

Maximum Peak Reverse Current (Note 4)

Capacitance
Reverse Recovery Time

Notes: 3. Valid provided that device terminals are kept at ambient Temperature.

4. Short duration pulse test used to minimize self-heating effect.

LL4148 / LL4448

Document number: DS12013 Rev. 10 - 3

I

RM

C

J

t

rr

www.diodes.com

- 1.0

- 5.0 μA

- 50 μA

- 30 μA

- 25 nA

- 4.0 pF

- 4.0 ns

1 of 3

I

= 10mA

V

F

= 5.0mA

I

F

= 100mA

I

F

= 75V

V

R

= 75V, TJ = 150°C

V

R

= 75V, TJ = 150°C

V

R

= 75V

V

R

VR = 0, f = 1.0MHz

= 10mA, to IR = 1.0mA,

I

F

V

= 6.0V, RL = 100Ω

R

May 2012

© Diodes Incorporated

W

TANT

O

U

F

O

RWARD CUR

RENT

GE CUR

R

N

T

(mA)

S

ANE

F

I, INS

1,000

100

10

1.0

0.1

0.01
012

V , INSTANTANEOUS FORWARD VOL TAGE (V)

F

Fig. 1 Typical Forward Characteristics

NOT RECOMMENDED FOR NEW DESIGN

USE 1N4148W / 1N4448

10,000

1,000

(nA)
E

100

10

R

I, LEAKA

1

0100200

Fig. 2 Typical Leakage Current vs. Junction Temperature

LL4148 / LL4448

T, JUNCTION TEMPERATURE ( C)

j

°

Package Outline Dimensions

LL4148 / LL4448

Document number: DS12013 Rev. 10 - 3

A

B

C

2 of 3

www.diodes.com

MiniMELF

Dim Min Max

A 3.30 3.70
B 1.30 1.60
C 0.28 0.50
All Dimensions in mm

May 2012

© Diodes Incorporated