Diodes DPLS350E User Manual
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Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Top View
= 25°C unless otherwise specified
A
1
S
A
B
Device Schematic
LOW V
DPLS350E
PNP SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.115 grams (approximate)
O
R
T
L
L
C
E
C
O
2,4
4
C
E
3
E
T
I
M
T
E
R
Pin Out Configuration
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
3
E
C
2
B
1
-60 V
-50 V
-6 V
-5 A
-3 A
-1 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
R
T
, T
J
JA
STG
1 W
125 °C/W
-55 to +150 °C
DPLS350E
Document number: DS31230 Rev. 4 - 2
1 of 5
www.diodes.com
April 2009
© Diodes Incorporated
(BR)
(BR)
(BR)
)
)
)
P, P
O
R
PATIO
N
C
O
CTO
R CUR
REN
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
I
CBO
I
⎯ ⎯
EBO
V
CBO
V
CEO
V
EBO
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
h
V
CE(SAT)
R
CE(SAT
V
BE(SAT
V
BE(ON
FE
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
f
T
C
⎯ ⎯
obo
1.2
1.0
(W)
0.8
⎯ ⎯
⎯ ⎯
-50
-50
-5
200
200
100
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
⎯ ⎯
⎯ ⎯
100
(A)
-100
-50
-100 nA
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯ V
⎯ ⎯ V
-100
-180
-300
67 150
-1.2 V
-1.1 V
⎯ ⎯
40 pF
nA
μA
= -50V, IE = 0
V
CB
= -50V, IE = 0, TA = 150°C
V
CB
VEB = -5V, IC = 0
V
I
= -100μA
C
V
I
= -10mA
C
V
I
= -100μA
E
V
= -2V, IC = -0.5A
CE
⎯
= -2V, IC = -1A
CE
= -2V, IC = -2A
CE
IC = -0.5A, IB = -50mA
mV
I
= -1A, IB = -50mA
C
= -2A, IB = -200mA
I
C
mΩ
= -2A, IB = -200mA
I
E
IC = -2A, IB = -200mA
VCE = -2V, IC = -1A
= -5V, IC = -100mA,
V
CE
MHz
f = 100MHz
VCB = -10V, f = 1MHz
DPLS350E
I = -10mA
B
I = -8mA
B
I = -6mA
B
0.6
DISSI
WE
0.4
D
0.2
0
25 50 75 100 125 150 175
0
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
LLE
C
-I ,
012345
-V , COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage
CE
I = -4mA
B
I = -2mA
B
DPLS350E
Document number: DS31230 Rev. 4 - 2
2 of 5
www.diodes.com
April 2009
© Diodes Incorporated
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