Diodes DPLS160 User Manual
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DPLS160
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DNLS160)
• Surface Mount Package Suited for Automated Assembly
• Lead Free/RoHS Compliant (Note 1)
• "Green Device" (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
NEW PRODUCT
• Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.008 grams (approximate)
Maximum Ratings @T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current (DC)
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
LOW V
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PNP SURFACE MOUNT TRANSISTOR
CE(SAT)
SOT-23
B
Schematic and Pin Configuration
C
E
-80 V
-60 V
-5 V
-1 A
-2 A
-300 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
DS31389 Rev. 4 - 2 1 of 4
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document
AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
T
www.diodes.com
300 mW
R
JA
θ
, T
J
STG
417
-55 to +150
°C/W
°C
DPLS160
© Diodes Incorporated
P, P
OWER
PATIO
N
C
O
CTO
R CUR
REN
T
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
I
I
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
NEW PRODUCT
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
V
CE(SAT)
R
CE(SAT)
V
BE(SAT)
V
BE(ON)
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
Current Gain-Bandwidth Product
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
400
CBO
CES
EBO
h
FE
obo
f
T
-80
-60
-5
⎯ ⎯
⎯ ⎯
⎯ ⎯
200
150
100
⎯
⎯
⎯
⎯
⎯
⎯
⎯
150 220
⎯ ⎯
⎯ ⎯
⎯ ⎯
-100
-50
-100 nA
-100 nA
325
250
180
-90
-90
-160
⎯
⎯
⎯
-160
-175
-330
160 330 mΩ
-0.95 -1.1 V
-0.82 -0.9 V
10 15 pF
⎯
V
IC = -100μA, IE = 0
V
IC = -10mA, IB = 0
V
IE = -100μA, IC = 0
nA
V
= -60V, IE = 0
CB
μA
V
= -60V, IE = 0, TA = 150°C
CB
V
mV
VCE = -60V, V
V
= -5V, IC = 0
EB
= -5V, IC = -1mA
V
CE
= -5V, IC = -500mA
V
CE
V
= -5V, IC = -1A
CE
= -100mA, IB = -1mA
I
C
= -500mA, IB = -50mA
I
C
I
= -1A, IB = -100mA
C
BE
= 0
IC = -1A, IB = -100mA
IC = -1A, IB = -50mA
V
= -5V, IC = -1A
CE
VCB = -10V, f = 1.0MHz
MHz
VCE = -10V, IC = -50mA, f = 100MHz
1.5
350
I = -10mA
B
I = -8mA
B
I = -6mA
B
I = -4mA
B
I = -2mA
B
(mW)
DISSI
300
250
200
150
100
D
1.2
(A)
0.9
0.6
LLE
C
-I ,
0.3
50
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
150
175
200
Fig. 1 Maximum Power Dissipation vs.
Ambient Temperature
0
01234
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
5
DS31389 Rev. 4 - 2 2 of 4
www.diodes.com
DPLS160
© Diodes Incorporated
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