Diodes DP350T05 User Manual

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Features

• Epitaxial Planar Die Construction

• Complementary NPN Type Available (DN350T05)

• Ideal for Medium Power Amplification and Switching

• Lead, Halogen and Antimony Free, RoHS

Compliant "Green" Device (Notes 2, 3 and 4)

• Qualified to AEC-Q101 Standards for High
Reliability

Mechanical Data

• Case: SOT-23

• Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminal Connections: See Diagram

• Terminals: Finish ⎯ Matte Tin Finish annealed over

Alloy 42 leadframe. Solderable per MIL-STD-202,
Method 208

• Marking Information: K3U - See Page 2

• Ordering & Date Code Information: See Page 2

• Weight: 0.008 grams (approximate)

E

B

DP350T05

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

C

TOP VIEW

G
H

B

A

E

D

C

B

C

SOT-23

Dim Min Max

A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05

K

J

L

M

H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α

All Dimensions in mm

0° 8°

E

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol DP350T05 Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead. Halogen and Antimony Free.

3. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Product is manufactured with Green Molding Compound and does not contain Halogens or Sb

DS30624 Rev. 7 - 2 1 of 4

V

CBO

V

CEO

V

EBO

IC

PD

R

JA

θ

TJ, T

STG

www.diodes.com

-350 V

-350 V

-5.0 V

-500 mA
300 mW
417

-55 to +150

Fire Retardants.

2O3

°C/W

°C

DP350T05

© Diodes Incorporated

P, P

OWER

PATIO

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current

ON CHARACTERISTICS (Note 5)

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance
Transition Frequency

Notes: 5. Short duration pulse test used to minimize self-heating effect.

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

hFE

V

CE(SAT)

V

BE(SAT)

V

BE(ON)

C

⎯
⎯

⎯

⎯

obo

fT

-350

-350

-5.0

⎯
⎯
⎯

-50 nA

-50 nA

20
30
30
20
15

⎯

⎯
⎯

⎯

⎯
⎯

⎯

⎯
⎯

200
200

⎯

-0.30

-0.35

-0.50

-1.0

-0.75

-0.85

-0.90

-2.0 V

7.0 pF

50

⎯

V

IC = -100μA, IE = 0

V

IC = -1.0mA, IB = 0

V

IE = -10μA, IC = 0
VCB = -200V, IE = 0
V

= -3.0V, IC = 0

CE

IC = -1.0mA, VCE = -10V
IC = -10mA, VCE = -10V

⎯

IC = -30mA, VCE = -10V
IC = -50mA, V
IC = -100mA, VCE = -10V
IC = -10mA, IB = -1.0mA
IC = -20mA, IB = -2.0mA

V

IC = -30mA, IB = -3.0mA
IC = -50mA, IB = -5.0mA
IC = -10mA, IB = -1.0mA

V

IC = -20mA, IB = -2.0mA
IC = -30mA, IB = -3.0mA
IC = -100mA, VCE = -10V

VCB = -20V, f = 1.0MHz, IE = 0

MHz

VCE = -10V, IC = -20mA

CE

= -10V

350

300

N (mW)

250

200

DISSI

150

100

D

50

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75 100 125

150

175

200

Fig. 1, Ma x Power Dissi pation vs . Ambi ent Tem perature

0

-1
I , COLLECTOR CURRENT (mA)

C

Fig. 2,

DC Current Gain vs. Collector Current

-10 -100

DS30624 Rev. 7 - 2 2 of 4

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DP350T05

© Diodes Incorporated