Diodes DP0150BLP4 User Manual

Features

 Epitaxial Die Construction
 Ultra-Small Leadless Surface Mount Package
 Ultra-low Profile (0.40mm max)
 Complementary NPN Type: DN0150ALP4 / DN0150BLP4

 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

X2-DFN1006-3

Bottom View

B

Device Symbol

DP0150ALP4 / DP0150BLP4

50V PNP SMALL SIGNAL TRANSISTOR IN DFN1006

Mechanical Data

 Case: X2-DFN1006-3
 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish  NiPdAu, Solderable per MIL-STD-202,

Method 208

 Weight: 0.0008 grams (approximate)

C

B

C

E

E

Top View

Pin Configuration

Ordering Information

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DP0150ALP4-7 T5 7 8 3,000

DP0150ALP4-7B T5 7 8 10,000

DP0150BLP4-7 T6 7 8 3,000

DP0150BLP4-7B T6 7 8 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

(Note 4)

Marking Information

DP0150ALP4-7
DP0150BLP4-7

XX XX

Top View

Dot Denotes

Collector Side

DP0150ALP4-7B
DP0150BLP4-7B

XX = Product Type Marking Code
(See Ordering Information)

Top View

Bar Denotes Base

and Emitter Side

DP0150ALP4 / DP0150BLP4

Document number: DS31493 Rev. 5 - 2

1 of 5

www.diodes.com

December 2013

© Diodes Incorporated

)

Absolute Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Power Dissipation (Note 5)

NEW PRODUCT

Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range

ESD Ratings (Note 7)

DP0150ALP4 / DP0150BLP4

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

B

P

D

R

θJA

R

θJL

T

, T

J

STG

-50 V

-50 V

-5 V

-100 mA

-200 mA

-30 mA

450 mW
278 °C/W
110 °C/W

-55 to +150 °C

Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A

Characteristic Symbol Value Unit JEDEC Class

Electrostatic Discharge - Machine Model ESD MM 400 V C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current

BV
BV
BV

I

CBO

I

EBO

CBO

CEO

EBO

-50 — — V

-50 — — V

-5 — — V
— — -0.1 μA
— — -0.1 μA

IC = -10μA, IE = 0
IC = -1mA, IB = 0
IE = -10μA, IC = 0
VCB = -50V, IE = 0
VEB = -5V, IC = 0

ON CHARACTERISTICS (Note 8)

Collector-Emitter Saturation Voltage
DC Current Gain DP01510ALP4

DP01510BLP4

V

CE(SAT

h

FE

— -0.15 -0.3 V

120 — 240
200 — 400

IC = -100mA, IB = -10mA

—

VCE = -6V, IC = -2mA

SMALL SIGNAL CHARACTERISTICS

= -10V, IE = 1mA

V

Transition Frequency

Output Capacitance

Notes: 5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR-4 PCB; device is measured under still air

conditions whilst operating in a steady-state. The entire exposed collector pad is attached to the heat sink.

6. Thermal resistance from junction to solder-point (at the end of the collector lead).

7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

8. Measured under pulsed conditions. Pulse width  300µs. Duty cycle  2%

f

T

C

ob

80 — — MHz

— 1.6 — pF

CE

f = 30MHz

= -10V, IE = 0,

V

CB

f = 1MHz

DP0150ALP4 / DP0150BLP4

Document number: DS31493 Rev. 5 - 2

2 of 5

www.diodes.com

December 2013

© Diodes Incorporated