Diodes DNLS350Y User Manual
Please click here to visit our online spice models database.
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DPLS350Y)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish — Matte Tin annealed over Copper leadframe
NEW PRODUCT
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
LOW V
NPN SURFACE MOUNT TRANSISTOR
CE(SAT)
SOT89-3L
3
E
C
C
4
O
T
2
B
1
W
E
I
V
P
Schematic and Pin Configuration
DNLS350Y
T
O
R
L
L
C
E
C
O
2,4
1
E
S
A
B
3
E
T
I
M
T
E
R
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Collector Current
Continuous Collector Current
Base Current
= 25°C unless otherwise specified
A
V
CBO
V
CEO
V
EBO
I
CM
I
I
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C P
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
T
50 V
50 V
5 V
5 A
C
B
D
R
JA
θ
, T
J
STG
3 A
0.5 A
1 W
125 °C/W
-55 to +150 °C
DS31208 Rev. 4 - 2
1 of 4
www.diodes.com
DNLS350Y
© Diodes Incorporated
P
P
O
R
PAT
O
C
O
CTO
R C
URRENT
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
I
CBO
I
EBO
I
CES
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
ON CHARACTERISTICS (Note 4)
DC Current Gain
NEW PRODUCT
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
h
V
CE(SAT)
R
CE(SAT)
V
BE(SAT)
V
BE(ON)
FE
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
f
T
C
obo
1.0
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
50
50
5
300
300
300
200
100
⎯
⎯
⎯
⎯
⎯
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
100
⎯ ⎯
3.0
100
50
100 nA
100 nA
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
700
⎯ ⎯
⎯ ⎯
38 80
70 160
130 280
124 260
180 370
62 130
1.1 V
1.2 V
1.1 V
⎯ ⎯
25 pF
nA
V
μA
V
VEB = 5V, IC = 0
V
V
I
C
V
I
C
V
I
E
V
V
⎯
V
V
V
I
C
I
C
mV
I
C
I
C
I
C
mΩ
I
E
I
C
I
C
V
V
MHz
f = 100MHz
V
= 50V, IE = 0
CB
= 50V, IE = 0, TA = 150°C
CB
= 50V, VBE = 0
CE
= 100μA
= 10mA
= 100μA
= 2V, IC = 0.1A
CE
= 2V, IC = 0.5A
CE
= 2V, IC = 1A
CE
= 2V, IC = 2A
CE
= 2V, IC = 3A
CE
= 0.5A, IB = 50mA
= 1A, IB = 50mA
= 2A, IB = 100mA
= 2A, IB = 200mA
= 3A, IB = 300mA
= 2A, IB = 200mA
= 2A, IB = 100mA
= 3A, IB = 300mA
= 2V, IC = 1A
CE
= 5V, IC = 100mA,
CE
= 10V, f = 1MHz
CB
I = 10mA
0.8
N (mW)
I
2.5
(A)
2.0
0.6
B
I = 8mA
B
I = 6mA
B
1.5
DISSI
0.4
WE
,
D
0.2
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
Fig. 1 Max Po wer D issipat ion vs. Ambien t Temperature
150
LLE
1.0
C
I,
0.5
0
01234
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
I = 4mA
B
I = 2mA
B
5
DS31208 Rev. 4 - 2
2 of 4
www.diodes.com
DNLS350Y
© Diodes Incorporated
Loading...