Diodes DNLS350E User Manual
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Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DPLS350E)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Top View Device Schematic
BA
DNLS350E
LOW V
NPN SURFACE MOUNT TRANSISTOR
CE(SAT)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.115 grams (approximate)
R
O
T
C
E
L
L
O
C
1
SE
2,4
C
4
3
E
T
I
M
E
T
R
Pin Out Configuration
E
3
2
C
B
1
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Collector Current
Continuous Collector Current
Peak Pulse Base Current
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
DNLS350E
Document number: DS31231 Rev. 3 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Device mounted on FR-4 PCB with 1inch2 copper pad layout.
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
BM
R
R
T
, T
J
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60 V
50 V
6 V
5 A
3 A
1 A
1 W
JA
125 °C/W
2 W
JA
STG
62.5 °C/W
-55 to +150 °C
April 2009
© Diodes Incorporated
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P, P
OWER
PATIO
C
O
C
TOR CUR
RENT
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
h
FE
V
CE(SAT)
R
CE(SAT
V
⎯ ⎯
BE(SAT
V
⎯ ⎯
BE(ON
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
f
T
C
⎯ ⎯
obo
2.0
⎯ ⎯
⎯ ⎯
⎯ ⎯
50
50
5
200
200
100
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
100
3.0
100 nA
50
μA
100 nA
⎯ ⎯
⎯ ⎯
⎯ ⎯
V
V
V
⎯ ⎯
⎯ ⎯ V
⎯
⎯ ⎯ V
90
170
mV
290
62 145
mΩ
1.2 V
1.1 V
⎯ ⎯
MHz
30 pF
= 50V, IE = 0
V
CB
= 50V, IE = 0, TA = 150°C
V
CB
VEB = 5V, IC = 0
= 100μA
I
C
= 10mA
I
C
I
= 100μA
E
V
= 2V, IC = 0.5A
CE
= 2V, IC = 1A
CE
= 2V, IC = 2A
CE
IC = 0.5A, IB = 50mA
IC = 1A, IB = 50mA
IC = 2A, IB = 200mA
= 2A, IB = 200mA
I
E
IC = 2A, IB = 200mA
VCE = 2V, IC = 1A
V
= 5V, IC = 100mA,
CE
f = 100MHz
VCB = 10V, f = 1MHz
DNLS350E
I = 10mA
1.6
N (mW)
2.5
(A)
2.0
1.2
B
I = 8mA
B
I = 6mA
B
1.5
DISSI
0.8
D
0.4
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
Fig. 1 Max Po wer D issipation vs. Ambient Temperature
150
LLE
1.0
C
I,
0.5
0
012345
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
I = 4mA
B
I = 2mA
B
DNLS350E
Document number: DS31231 Rev. 3 - 2
2 of 5
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April 2009
© Diodes Incorporated
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