Diodes DNLS320E User Manual
R
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Features
• Epitaxial Planar Die Construction
• Low Collector-Emitter Saturation Resistance R
• High DC Current Gain h
• Complementary PNP Type Available (DPLS325E)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
> 400 at IC = 2A
FE
CE(SAT)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green" Molding Compound.
NEW P PRRODUCT T EW ODUC
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.112 grams (approximate)
= 80mΩ at 3A
LOW V
DNLS320EDNLS320E
NPN SURFACE MOUNT TRANSISTOR
CE(SAT)
3
2
1
4
4
C
TOP VIEW
SOT - 223
3
E
2
C
B
1
Schematic and Pin Configuration
BASE
COLLECTOR
2,4
1
3
EMITTE
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
= 25°C unless otherwise specified
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @TA = 25°C (Note 3) PD
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS31326 Rev. 3 - 2
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website a t http://www.diodes.com/datasheets/ap02001.pdf.
V
CBO
V
CEO
V
EBO
I
C
I
CM
R
JA
θ
, T
T
J
STG
1 of 4
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20 V
20 V
5 V
3 A
8 A
1 W
125 °C/W
-55 to +150 °C
DNLS320E
© Diodes Incorporated
P, P
OWER
PATIO
C
O
CTO
R CUR
RENT
Electrical Characteristics @T
Off Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
On Characteristics (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
NEW PRODUCT
AC Characteristics
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
Notes: 4. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.
1.0
Characteristic Symbol Min Typ Max Unit Test Condition
= 25°C unless otherwise specified
A
20
20
5
⎯ ⎯
⎯ ⎯
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
⎯
V
CE(SAT)
⎯
⎯
⎯ ⎯
⎯ ⎯
V
BE(SAT)
V
BE(ON)
500
h
FE
f
T
C
ibo
C
obo
t
on
t
off
400
150
150
⎯
⎯
⎯
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
0.04
0.18
0.24
⎯
⎯
⎯
⎯ ⎯
230
23
26
220
3.5
V
V
V
100 nA
100 nA
0.10
0.50
V
0.45
0.9 V
0.9 V
⎯
⎯
⎯
⎯
MHz
⎯
⎯
⎯
⎯
pF
pF
ns
ns
= 100μA, IE = 0
I
C
IC = 10mA, IB = 0
= 100μA, IC = 0
I
E
VCB = 16V, IE = 0
VEB = 4V, IC = 0
= 0.1A, IB = 0.5mA
I
C
= 2A, IB = 10mA
I
C
I
= 3A, IB = 20mA
C
= 1A, IB = 10mA
I
C
VCE = 2V, IC = 1A
= 2V, IC = 0.1A
V
CE
= 2V, IC = 2A
V
CE
V
= 2V, IC = 6A
CE
VCE = 5V, IC = 50mA, f = 50MHz
VEB = 0.5V, f = 1MHz
VCB = 10V, f = 1MHz
= 10V, IC = 500mA
V
CC
= -IB2 = 50mA
I
B1
3.0
0.8
(A)
N (mW)
0.6
DISSI
0.4
D
0.2
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
Fig. 1 Max Po wer D issipat i o n vs. Ambient Temperatur e
150
2.5
2.0
1.5
LLE
1.0
C
I,
0.5
0
012345
V , COL LECTO R-EMI TTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
I = 5mA
B
I = 4mA
B
I = 3mA
B
I = 2mA
B
I = 1mA
B
DS31326 Rev. 3 - 2
2 of 4
www.diodes.com
DNLS320E
© Diodes Incorporated
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