Page 1
R
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Features
• Epitaxial Planar Die Construction
• Low Collector-Emitter Saturation Resistance R
• High DC Current Gain h
• Complementary PNP Type Available (DPLS325E)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
> 400 at IC = 2A
FE
CE(SAT)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green" Molding Compound.
NEW P PRRODUCT T EW ODUC
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.112 grams (approximate)
= 80mΩ at 3A
LOW V
DNLS320EDNLS320E
NPN SURFACE MOUNT TRANSISTOR
CE(SAT)
3
2
1
4
4
C
TOP VIEW
SOT - 223
3
E
2
C
B
1
Schematic and Pin Configuration
BASE
COLLECTOR
2,4
1
3
EMITTE
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
= 25°C unless otherwise specified
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @TA = 25°C (Note 3) PD
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C
Operating and Storage Temperature Range
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS31326 Rev. 3 - 2
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website a t http://www.diodes.com/datasheets/ap02001.pdf.
V
CBO
V
CEO
V
EBO
I
C
I
CM
R
JA
θ
, T
T
J
STG
1 of 4
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20 V
20 V
5 V
3 A
8 A
1 W
125 °C/W
-55 to +150 °C
DNLS320E
© Diodes Incorporated
Page 2
P, P
OWER
PATIO
C
O
CTO
R CUR
RENT
Electrical Characteristics @T
Off Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
On Characteristics (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
NEW PRODUCT
AC Characteristics
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
Notes: 4. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.
1.0
Characteristic Symbol Min Typ Max Unit Test Condition
= 25°C unless otherwise specified
A
20
20
5
⎯ ⎯
⎯ ⎯
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
⎯
V
CE(SAT)
⎯
⎯
⎯ ⎯
⎯ ⎯
V
BE(SAT)
V
BE(ON)
500
h
FE
f
T
C
ibo
C
obo
t
on
t
off
400
150
150
⎯
⎯
⎯
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
0.04
0.18
0.24
⎯
⎯
⎯
⎯ ⎯
230
23
26
220
3.5
V
V
V
100 nA
100 nA
0.10
0.50
V
0.45
0.9 V
0.9 V
⎯
⎯
⎯
⎯
MHz
⎯
⎯
⎯
⎯
pF
pF
ns
ns
= 100μA, IE = 0
I
C
IC = 10mA, IB = 0
= 100μA, IC = 0
I
E
VCB = 16V, IE = 0
VEB = 4V, IC = 0
= 0.1A, IB = 0.5mA
I
C
= 2A, IB = 10mA
I
C
I
= 3A, IB = 20mA
C
= 1A, IB = 10mA
I
C
VCE = 2V, IC = 1A
= 2V, IC = 0.1A
V
CE
= 2V, IC = 2A
V
CE
V
= 2V, IC = 6A
CE
VCE = 5V, IC = 50mA, f = 50MHz
VEB = 0.5V, f = 1MHz
VCB = 10V, f = 1MHz
= 10V, IC = 500mA
V
CC
= -IB2 = 50mA
I
B1
3.0
0.8
(A)
N (mW)
0.6
DISSI
0.4
D
0.2
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
Fig. 1 Max Po wer D issipat i o n vs. Ambient Temperatur e
150
2.5
2.0
1.5
LLE
1.0
C
I,
0.5
0
012345
V , COL LECTO R-EMI TTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
I = 5mA
B
I = 4mA
B
I = 3mA
B
I = 2mA
B
I = 1mA
B
DS31326 Rev. 3 - 2
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DNLS320E
© Diodes Incorporated
Page 3
2
2
2,000
0.5
1,500
1,000
500
NEW PRODUCT
0
0.001 0.01 0.1 1 10
1.
1.0
0.8
0.6
0.4
0.3
0.2
SATURATION VOLTAGE (V)
CE(SAT)
0.1
V , COLLECTOR-EMITTER
0
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
1.
1.0
0.8
0.6
C
vs. Collector Current
0.4
0.2
BE(ON)
0
V , BASE-EMITTER TURN-ON VOLTAGE (V)
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collecto r Cu r re nt
0.4
0.2
0
0.001 0.01 0.1 1 10
BE(SAT)
V , BASE-EMITTER SATURATION VOLTAGE (V)
I , COLLECTOR CURRENT (A)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
Ordering Information (Note 5)
Device Packaging Shipping
DNLS320E-13 SOT-223 2500/Tape & Reel
Notes: 5. F or packaging details, go to our websi te at htt p://www.diodes.com/ap2007.pdf.
Marking Information
(Top View)
N320
YWW
N320 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52
DS31326 Rev. 3 - 2
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DNLS320E
© Diodes Incorporated
Page 4
Package Outline Dimensions
NEW PRODUCT
Dim Min Max Typ
A 1.55 1.65 1.60
A1 0.010 0.15 0.05
b1 2.90 3.10 3.00
b2 0.60 0.80 0.70
C 0.20 0.30 0.25
D 6.45 6.55 6.50
E 3.45 3.55 3.50
E1 6.90 7.10 7.00
e — — 4.60
e1 — — 2.30
L 0.85 1.05 0.95
Q 0.84 0.94 0.89
All Dimensions in mm
SOT-223
Suggested Pad Layout:
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
IMPORTANT NOTICE
LIFE SUPPORT
DS31326 Rev. 3 - 2
4 of 4
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DNLS320E
© Diodes Incorporated
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