Diodes DNBT8105 User Manual
Features
• Epitaxial Planar Die Construction
• Ideal for Medium Power Amplification and Switching
• High Collector Current Rating
• Complementary Version Available (DPBT8105)
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green Device" (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Top View Device Schematic
DNBT8105
1A NPN SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
C
B
E
Ordering Information (Note 3)
Part Number Case Packaging
DNBT8105-7 SOT-23 3000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code R S T U V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
K81
DNBT8105
Document number: DS30513 Rev. 10 - 2
K81 = Product Type Marking Code
YM = Date Code Marking
YM
Y = Year (ex: S = 2005)
M = Month (ex: 9 = September)
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θ
(BR)
(BR)
(BR)
)
)
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
= 25°C unless otherwise specified
A
V
CBO
V
CEO
V
EBO
IC
I
CM
80 V
60 V
5 V
1 A
2 A
DNBT8105
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Electrical Characteristics @T
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
5. Short duration pulse test used to minimize self-heating effect.
= 25°C unless otherwise specified
A
V
CBO
V
CEO
V
EBO
I
⎯
CBO
I
CES
I
EBO
hFE
V
CE(SAT)
V
BE(SAT
V
BE(ON
C
⎯
obo
fT
R
JA
, T
T
J
STG
80
60
5
⎯
⎯
100
100
80
30
⎯
⎯
⎯
⎯
150
⎯
⎯
⎯
100 nA
100 nA
100 nA
⎯
300
⎯
⎯
0.25
0.5
1.1 V
1.0 V
10 pF
MHz
⎯
600
209
-55 to +150
V
IC = 100μA, IE = 0
V
IC = 10mA, IB = 0
V
IE = 100μA, IC = 0
VCB = 60V, IE = 0
VCE = 60V
V
= 4V, IC = 0
EB
IC = 1mA, V
IC = 500mA, V
⎯
IC = 1A, V
IC = 2A, V
IC = 500mA, IB = 50mA
V
IC = 1A, IB = 100mA
IC = 1A, IB = 100mA
IC = 1A, V
VCB = 10V, f = 1.0MHz
VCE = 10V, IC = 50mA, f = 100MHz
CE
CE
CE
CE
= 5V
= 5V
= 5V
= 5V
CE
= 5V
mW
°C/W
°C
DNBT8105
Document number: DS30513 Rev. 10 - 2
2 of 5
www.diodes.com
June 2011
© Diodes Incorporated
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