Diodes DN350T05 User Manual

Please click here to visit our online spice models database.

Features

• Epitaxial Planar Die Construction

• Complementary PNP Type Available (DP350T05)

• Ideal for Medium Power Amplification and Switching

• Lead, Halogen and Antimony Free, RoHS

Compliant "Green" Device (Notes 2, 3 and 4)

• Qualified to AEC-Q101 Standards for High

Reliability

Mechanical Data

• Case: SOT-23

• Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminal Connections: See Diagram

• Terminals: Finish ⎯ Matte Tin Finish annealed over

Alloy 42 leadframe. Solderable per MIL-STD-202,
Method 208

• Marking Information: K3S, See Page 3

• Ordering & Date Code Information: See Page 3

• Weight: 0.008 grams (approximate)

E

B

DN350T05

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

C

TOP VIEW

G
H

A

E

D

SOT-23

Dim Min Max

A 0.37 0.51

B

C

B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05

K

J

L

M

H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α

All Dimensions in mm

0° 8°

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead. Halogen and Antimony Free.

3. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Product is manufactured with Green Molding Compound and does not contain Halogens or Sb

DS30625 Rev. 8 - 2 1 of 4

V

CBO

V

CEO

V

EBO

IC

PD

R

JA

θ

TJ, T

STG

www.diodes.com

350 V
350 V

5.0 V
500 mA
300 mW

2O3

417

-55 to +150

Fire Retardants.

°C/W

°C

DN350T05

© Diodes Incorporated

P, P

O

R

PATIO

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current

ON CHARACTERISTICS (Note 5)

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance
Transition Frequency

Notes: 5. Short duration pulse test used to minimize self-heating effect.

400

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

hFE

V

CE(SAT)

V

BE(SAT)

V

BE(ON)

C

fT

obo

350
350

5.0

⎯
⎯

20
30
30
20
15

⎯

⎯
⎯

⎯

⎯
⎯

⎯
⎯

⎯

50

⎯
⎯
⎯

50 nA
50 nA

⎯
⎯

200
200

⎯

0.30

0.35

0.50

1.0

0.75

0.80

0.90

2.0 V

7.0 pF
⎯

V

IC = 100μA, IE = 0

V

IC = 1.0mA, IB = 0

V

IE = 10μA, IC = 0
VCB = 250V, IE = 0
V

= 5V, IC = 0

CE

IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V

⎯

IC = 30mA, VCE = 10V
IC = 50mA, V
IC = 100mA, VCE = 10V

IC = 10mA, IB = 1.0mA
IC = 20mA, IB = 2.0mA

V

IC = 30mA, IB = 3.0mA
IC = 50mA, IB = 5.0mA

IC = 10mA, IB = 1.0mA

V

IC = 20mA, IB = 2.0mA
IC = 30mA, IB = 3.0mA

IC = 100mA, VCE = 10V

VCB = 20V, f = 1.0MHz, IE = 0

MHz

VCE = 10V, IC = 20mA

CE

= 10V

300

350

250

300

N (mW)

250

200

200

150

DISSI

150

WE

D

100

100

50

50

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75 100 125

150

175

200

Fig. 1, Ma x Power Diss i pation vs. Ambient Temperat ur e

0

110

I , COLLECTOR CURRENT (mA)

C

Fig. 2,

DC Current Gain vs. Collector Current

100

DS30625 Rev. 8 - 2 2 of 4

www.diodes.com

DN350T05

© Diodes Incorporated