Diodes DN0150BDJ User Manual
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Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Ultra Small Package
NEW PRODUCT
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Base Current
= 25°C unless otherwise specified
A
SOT-963
DN0150ADJ / DN0150BDJ
DUAL NPN SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: SOT-963
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.0027 grams (approximate)
6
Q1
Device SchematicTop View
V
CBO
V
CEO
V
EBO
I
C
I
B
4
5
Q2
2
31
60 V
50 V
5 V
100 mA
30 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Electrical Characteristics @T
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain DN0150ADJ
DN0150BDJ
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capactiance
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2%
DN0150ADJ / DN0150BDJ
Document number: DS31484 Rev. 3 - 2
Characteristic Symbol Min Typ Max Unit Test Condition
A
T
J
= 25°C unless otherwise specified
BR)CBO
BR)CEO
BR)EBO
I
CBO
I
EBO
CE(SAT
h
FE
f
T
C
ob
50 — — V
5 — — V
— — 0.1
— — 0.1
— 0.10 0.25 V
120 — 240
200 — 400
60 — — MHz
— 1.3 — pF
V(
V(
V(
V
60 — — V
1 of 4
www.diodes.com
R
, T
P
D
JA
STG
300 mW
417 °C/W
-55 to +150 °C
IC = 10μA, IE = 0
IC = 1mA, IB = 0
IE = 10μA, IC = 0
μA
μA
= 60V, IE = 0
V
CB
= 5V, IC = 0
V
EB
IC = 100mA, IB = 10mA
—
VCE = 6V, IC = 2mA
V
= 10V, IE = -1mA
CE
f = 30MHz
V
= 10V, IE = 0,
CB
f = 1MHz
April 2009
© Diodes Incorporated
C
O
CTO
R CUR
RENT
C CUR
REN
T GAIN
C
O
CTO
R
T
TER
T
T
R
TURN-O
O
TAG
T
T
R
T
U
R
T
O
O
TAG
NEW PRODUCT
300
250
200
150
100
D
P , POWER DISSIPATION ( W)
50
R = 417°C/W
θ
JA
0
25 50 75 100 125 150
0
T , AMBIENT TEMPERATURE ( C)
A
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
1,000
T = 150°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
100
FE
h, D
°
V = 6V
CE
DN0150ADJ / DN0150BDJ
1,000
(mA)
DC
T = 150°C
A
T = -55°C
Pw = 10ms
T = 25°C
A
A
100
Pw = 100ms
LLE
10
C
-I ,
1
0.1 1 10 100
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
1
I/I = 10
CB
-EMI
VOLTAGE (V)
0.1
LLE
SATURATION
CE(SAT)
V,
T = 85°C
A
10
0.1 10 100 1,000
1
I , COLLECTOR CURRENT (mA)
C
Fig. 3 Typical DC Current Gain
vs. Collector Current (DN0150BDJ)
1.2
E (V)
I = 10
/I
CB
1.0
L
N V
0.8
T = -55°C
A
0.6
T = 25°C
E
A
0.4
T = 85°C
A
T = 150°C
A
0.2
BE(ON)
0
V , BASE-EMI
0.0001 0.001 0.01 0.1 1
I , COLLECTOR CURRENT (A)
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collect or Current
0.01
0.0001 0.001 0.01 0.1 1
I , COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
C
vs. Collector Current
1.2
V = 6V
E (V)
L
1.0
CE
N V
I
A
0.8
T = -55°C
A
SA
0.6
E
T = 25°C
A
T = 85°C
A
0.4
T = 150°C
A
0.2
0.0001 0.001 0.01 0.1 1
BE(SAT)
V , BASE-EMI
I , COLLECTOR CURRENT (A)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
DN0150ADJ / DN0150BDJ
Document number: DS31484 Rev. 3 - 2
2 of 4
www.diodes.com
April 2009
© Diodes Incorporated
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