Diodes DMT6010LFG User Manual
NEW PRODUCT
Product Summary
I
TC = +25°C
V
(BR)DSS
60V
R
7.5m @ V
11.5m @ VGS = 4.5V
DS(ON)
max
= 10V
GS
Description
This MOSFET has been designed to minimize the on-state resistance
) and yet maintain superior switching performance, making it
(R
DS(on)
ideal for high efficiency power management applications.
Applications
Synchronous Rectifier
Backlighting
Power Management Functions
DC-DC Converters
ADVANCE INFORMATION
D
D
D
Bottom View
D
Pin 1
S
S
S
G
max
D
30A
25A
Top View
DMT6010LFG
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low R
Excellent Q
Advanced Technology for DC/DC converts
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
100% UIS (Avalanche) rated
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
– ensures on state losses are minimized
DS(ON)
gd x RDS (ON)
Product (FOM)
Mechanical Data
Case: POWERDI®3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
D
G
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMT6010LFG-7
DMT6010LFG-13
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
POWERDI
POWERDI
®
3333-8
®
3333-8
2000/Tape & Reel
3000/Tape & Reel
Marking Information
DMT6010LFG
Document number: DS36620 Rev. 2 - 2
SG6 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 13 = 2013)
WW = Week code (01 ~ 53)
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March 2014
© Diodes Incorporated
)
g
g
g
)
r
)
NEW PRODUCT
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 10V
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Avalanche Current (Note 6)
Avalanche Energy (Note 6)
Thermal Characteristics (@T
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
ADVANCE INFORMATION
Operating and Storage Temperature Range
V
DSS
V
GSS
T
= +25°C
A
= +70°C
T
A
TC = +25°C
T
= +70°C
C
I
D
I
D
I
S
I
DM
I
AS
E
AS
= +25°C, unless otherwise specified.)
= +25°C
T
A
TC = +25°C
Steady State
t<10s 35
R
R
T
J, TSTG
P
JA
JC
DMT6010LFG
D
60 V
±20 V
13
11
30
24
A
A
3 A
80 A
20 A
64 mJ
2.2
41
W
55
°C/W
3
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
60 — — V
— —
— —
1 A
±100 nA
VGS = 0V, ID = 250A
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
V
GS(th
R
DS (ON)
V
SD
0.8 — 2 V
—
—
—
6 7.5
7.8 11.5
0.9 1.2 V
VDS = VGS, ID = 250A
= 10V, ID = 20A
V
m
GS
V
= 4.5V, ID = 20A
GS
VGS = 0V, IS = 20A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
C
C
oss
C
rss
R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. R
while R
is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R
JA
6 .UIS in production with L = 0.3mH, T
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
JA
is determined by the user’s board design.
= +25°C
J
t
t
Q
Q
D(on
t
D(off
t
iss
s
d
f
— 2090 —
— 746 —
— 38.5 —
— 0.59 —
— 19.3 —
— 41.3 —
— 6.0 —
— 8.8 —
— 5.7 —
— 4.3 —
— 23.4 —
— 9.7 —
V
= 30V, VGS = 0V,
pF
nC
nS
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
V
= 30V, ID = 20A
DS
= 30V, VGS = 10V,
V
DD
I
= 20A, RG = 3,
D
is guaranteed by design
JC
DMT6010LFG
Document number: DS36620 Rev. 2 - 2
2 of 6
www.diodes.com
March 2014
© Diodes Incorporated
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