Diodes DMS3019SSD User Manual
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• DIOFET utilize a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
• Low R
• Low V
construction
• Low Q
diode switching losses
• Low gate capacitance (Q
through or cross conduction currents at high frequencies
• Avalanche rugged – I
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
– minimizes conduction loss
DS(on)
– reducing the losses due to body diode
SD
– lower Qrr of the integrated Schottky reduces body
rr
) ratio – reduces risk of shoot-
g/Qgs
and EAR rated
AR
D2
D2
G1
S1
Top View
Top View
Internal Schematic
DMS3019SSD
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Weight: 0.072 grams (approximate)
Q1 Q2
G2
S2/D1
S2/D1
S2/D1
D
1
G
1
S
1
Integrat ed Schottky Diode
G
2
N-Channel MOSFETN-Channel MOSFET +
D
2
S
2
Ordering Information (Note 3)
Part Number Case Packaging
DMS3019SSD-13 SO-8 2500 / Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
Top View
8 5
S3019SD
WW
YY
1 4
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Y ear: “09” = 2009
October 2010
© Diodes Incorporated
Maximum Ratings – Q1 @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
T
Continuous Drain Current (Note 4) VGS = 10V
Continuous Drain Current (Note 5) VGS = 10V
Continuous Drain Current (Note 5) VGS = 4.5V
Pulsed Drain Current (Note 6)
Avalanche Current (Notes 6 & 7)
Repetitive Avalanche Energy (Notes 6 & 7) L = 0.3mH
Steady
State
Steady
State
Steady
State
= 25°C
A
T
= 70°C
A
= 25°C
T
A
= 70°C
T
A
T
= 25°C
A
= 70°C
T
A
DMS3019SSD
V
DSS
V
GSS
I
D
I
D
I
D
I
DM
I
AR
E
AR
30 V
±12 V
7.0
5.6
9.0
7.0
8.0
6.5
A
A
A
40 A
13 A
25.4 mJ
Maximum Ratings – Q2 @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) VGS = 10V
Continuous Drain Current (Note 5) VGS = 10V
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
Steady
Steady
Pulsed Drain Current (Note 6)
Avalanche Current (Notes 6 & 7)
Repetitive Avalanche Energy (Notes 6 & 7) L = 0.1mH
State
State
State
T
= 25°C
A
T
= 70°C
A
T
= 25°C
A
= 70°C
T
A
T
= 25°C
A
T
= 70°C
A
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
AR
E
AR
30 V
±20 V
5.7
4.6
7.0
5.6
6.0
4.7
A
A
A
40 A
16 A
12.8 mJ
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T
= 25°C (Note 4) R
A
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T
= 25°C (Note 5) R
A
Operating and Storage Temperature Range
Notes: 4. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout. The value in any given application depends on the user’s specific
board design. Device contains two active die running at equal power.
5. Device mounted on 1 inch x 1 inch FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Device contains two active die running
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
at equal power.
6. Repetitive rating, pulse width limited by junction temperature.
7. I
and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
AR
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P
D
θJA
P
D
θJA
T
, T
J
STG
1.19 W
107 °C/W
1.79 W
70 °C/W
-55 to +150 °C
October 2010
© Diodes Incorporated
)
g
g
g
r
R
C
URRENT
R
C
URR
T
DMS3019SSD
Electrical Characteristics – Q1 @ T
= 25°C unless otherwise stated
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
C
C
R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Q
Q
t
D(on)
Turn-On Rise Time
Turn-Off Delay Time
t
D(off)
Turn-Off Fall Time
Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
30
V = 4.5V
GS
25
(A)
20
V = 4.0V
GS
V = 3.5V
GS
V = 3.0V
GS
DSS
fs
SD
iss
oss
rss
t
t
f
30 - - V
- - 0.1 mA
- - ±100 nA
1.0 - 2.4 V
-
|
- 5 - S
- 0.4 1 V
- 1932 -
- 154 -
- 121 -
- 2.7 -
10
12
15
18
- 18.1 -
- 42.0 -
s
d
- 4.5 -
- 4.0 -
- 6.16 -
- 7.22 -
- 36.76 -
- 5.38 -
VGS = 0V, ID = 1mA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
VDS = VGS, ID = 250μA
= 10V, ID = 9A
V
mΩ
GS
VGS = 4.5V, ID = 7A
VDS = 5V, ID = 9A
VGS = 0V, IS = 1A
= 15V, VGS = 0V,
V
DS
pF
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 15V, VGS = 4.5V, ID = 9A
nC
ns
= 15V, VGS = 10V, ID = 9A
V
DS
= 10V, VDS = 15V,
V
GS
= 3Ω, RL = 1.7Ω
R
G
30
V = 5V
25
(A)
20
DS
EN
15
AIN
D
I, D
10
V = 2.5V
5
V = 2.0V
0
GS
V = 2.2V
0 0.5 1 1.5 2
V , DRAIN-SOURCE VOL TAGE (V)
DS
Fig. 1 Typical Output Character i st ic
GS
GS
AIN
D
I, D
15
10
5
0
V = 150°C
GS
V = 125°C
GS
V = 85°C
GS
0 1 1.5 2 2.5 30.5
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristic
V = 25°C
GS
V = -55°C
GS
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
3 of 10
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October 2010
© Diodes Incorporated
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