Diodes DMS3016SSSA User Manual
A
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Features
• DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
• Low R
• Ultra Low V
diode conduction
• Low Q
diode switching losses
• Low gate capacitance (Q
through or cross conduction currents at high frequencies
• Avalanche rugged – I
• Lead Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
- minimizes conduction losses
DS(ON)
– enhanced to reduce losses due to body
SD
- lower Qrr of the integrated Schottky reduces body
rr
) ratio – reduces risk of shoot-
g/Qgs
and EAR rated
AR
Top View
DMS3016SSS
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Weight: 0.072 grams (approximate)
S
S
S
G
Top View
Internal Schematic
D
D
D
D
Ordering Information (Note 3)
Part Number Case Packaging
DMS3016SSSA-13 SO-8 2500 / Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
8 5
S3016SA
YY
WW
1 4
Logo
Part no.
Xth week: 01 ~ 53
Y ear: “09” = 2009
Y ear: “10” = 2010
DMS3016SSSA
Document number: DS35073 Rev. 1 - 2
1 of 6
www.diodes.com
October 2010
© Diodes Incorporated
A
)
g
g
g
)
r
)
Maximum Ratings @T
= 25°C unless otherwi se specified
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) VGS = 4.5V
Steady
State
Pulsed Drain Current (Note 5)
Avalanche Current (Note 5) (Note 6)
Repetitive Avalanche Energy (Note 5) (Note 6) L = 0.3mH
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T
Operating and Storage Temperature Range
= 25°C (Note 4) R
A
A = 25°C
T
A = 85°C
T
DMS3016SSS
V
DSS
V
GSS
I
D
I
DM
IAR
E
AR
P
D
θJA
T
, T
J
STG
30 V
±12 V
9.8
6.3
A
90 A
13 A
25.4 mJ
1.54 W
81 °C/W
-55 to +150 °C
Electrical Characteristics @ T
= 25°C unless otherwise stated
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
30 - - V
- - 1.0 mA
- - ±100 nA
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
V
GS(th
R
DS (ON)
|Y
V
fs
SD
I
S
1.0 - 2.3 V
- 9 13
- 11 16
|
- 11 - S
- 0.35 0.6 V
- - 5 A -
VDS = VGS, ID = 250μA
= 10V, ID = 9.8A
V
mΩ
GS
= 4.5V, ID = 9.8A
V
GS
VDS = 5V, ID = 9.8A
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
iss
C
oss
C
rss
R
Total Gate Charge VGS = 4.5V Qg
Total Gate Charge VGS = 10V Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 4. Device mounted on minimum recommended layout. The value in any given application depends on the user’s specific board design.
5. Repetitive rating, pulse width limited by junction temperature.
6. I
and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
AR
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Q
Q
t
D(on
t
D(off
s
d
t
t
f
- 1849 - pF
- 158 - pF
- 123 - pF
0.53 2.68 4.82
- 18.5 - nC
- 43 - nC
- 4.7 - nC
- 4.0 - nC
- 6.62 - ns
- 8.73 - ns
- 36.41 - ns
- 4.69 - ns
=15V, VGS = 0V,
V
DS
f = 1.0MHz
Ω
VDS =0V, VGS = 0V, f = 1MHz
= 15V, VGS = 10V,
V
DS
I
= 9.8A
D
V
= 10V, VDS = 10V,
GS
= 3Ω, RL = 1.2Ω
R
G
DMS3016SSSA
Document number: DS35073 Rev. 1 - 2
2 of 6
www.diodes.com
October 2010
© Diodes Incorporated
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