Diodes DMS3016SFG User Manual

N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

Product Summary

I

V

R

(BR)DSS

30V

13mΩ @ V

16mΩ @ VGS = 4.5V

DS(on) max

GS

= 10V

D

TA = 25°C

10.2A

9.3A

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

• DC-DC Converters

• Power management functions

• Analog Switch

Top View Bottom View

POWERDI3333-8

D

S

D

D

D

S

Pin 1

S

Green

DMS3016SFG

Features and Benefits

• DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:

• Low R

• Low V

• Low Q

switching losses

• Low gate capacitance (Q
through or cross conduction currents at high frequencies

• Avalanche rugged – I

• Small form factor thermally efficient package enables higher

density end products

• Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

– minimize conduction losses

DS(ON)

– reducing the losses due to body diode conduction

SD

– lower Qrr of the integrated Schottky reduces body diode

rr

) ratio – reduces risk of shoot-

g/Qgs

and EAR rated

AR

Mechanical Data

• Case: POWERDI3333-8

• Case Material: Molded Plastic, “Green” Molding Compound.

• UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.072 grams (approximate)

8765

G

Gate

234

1

Top View

Pin Configuration

Drain

Source

Internal Schematic

POWERDI

®

Ordering Information (Note 4)

Part Number Case Packaging

DMS3016SFG-7 POWERDI3333-8 2,000/Tape & Reel

DMS3016SFG-13 POWERDI3333-8 3,000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

POWERDI is a registered trademark of Diodes Incorporated.

DMS3016SFG

Document number: DS35434 Rev. 7 - 2

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

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θ

P, P

T

R

N

N

T

P

O

R

Marking Information

Maximum Ratings (@T

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 5) VGS = 4.5V

Continuous Drain Current (Note 6) VGS = 10V

Continuous Drain Current (Note 6) VGS = 4.5V
Pulsed Drain Current (10us pulse, duty cycle=1%)

Avalanche Current (Note 7)
Repetitive Avalanche Energy (Note 7) L = 0.3mH

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

S30

YYWW

Steady

State

Steady

State

Steady

State

Steady

State

S30 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 09 = 2009)
WW = Week code (01 ~ 53)

V

DSS

V

GSS

T

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

I

D

I

D

I

D

I

D

I

DM

I

AR

E

AR

DMS3016SFG

30 V

±12 V

7.0

5.5

6.4

5.1

10.2

8.1

9.3

7.4
80 A
13 A
24 mJ

A

A

A

A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation

Thermal Resistance, Junction to Ambient

(Note 5)
(Note 6)
(Note 5)

(Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7 .I

and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C

AR

1,000

R

DS(ON)

Limited

I(A) @P =1ms

DW

I(A) @P =100µs

DW

100

I(A) @P =10ms

DW

10

I (A) @ DC

D

I(A) @P =10s

1

D

I , DRAIN CURRENT (A)

0.1

T = 150 C

J(MAX)

T= 25C

A

Single Pulse

0.01

0.01 0.1 1 10 100

DW

I(A) @P =1s

DW

I(A) @P =100ms

DW

°

°

V , DRAIN-SOURCE VOLTAGE (V)

DS

I(A) @

D

P=10µs

W

(W)

IWE

SIE
A

EAK

100

90
80
70
60
50
40
30

20

(PK)

10

0

Fig. 1 SOA, Safe Oper ation Area

P

R

R

T

J, TSTG

D

JA

θ

JC

0.98

2.08
127

60

°C/W

3.42 °C/W

-55 to +150 °C

Single Pulse

°

R = 54C/W

θ

JA

R = r * R

θθ

JA(t) (t) JA

T - T = P * R

JA JA(t)

θ

0.001 0.01 0.1 1 10 100 1,0000.0001
t1, PULSE DURATION TIME (sec)

Fig. 2 Single Pulse Maximum Power Dissipation

W

POWERDI is a registered trademark of Diodes Incorporated.

DMS3016SFG

Document number: DS35434 Rev. 7 - 2

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October 2012

© Diodes Incorporated

)

g

g

)

r

)

1

D = 0.7

D = 0.5

D = 0.3

0.1

D = 0.1

D = 0.05

D = 0.02

0.01

D = 0.01

D = 0.005

r(t), TRANSIENT THERMAL RESISTANCE

Single Puls e

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIMES (sec)

D = 0.9

R(t)=r(t) * R

θ

JA

R = 54°C/W

JA

Duty Cycle, D = t1/ t2

θθJA

Fig. 3 Transient Thermal Resistance

DMS3016SFG

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

30

⎯ ⎯
⎯ ⎯
⎯ ⎯

100

±100

V

VGS = 0V, ID = 1mA

µA

V

nA

DS

V

GS

= 30V, VGS = 0V
= ±12V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current

V

R

DS(ON)

|Y
V

GS(th

fs

SD

I

S

1.0

⎯
⎯

| ⎯

⎯

⎯

10 13

12 16

25

0.37 0.6 V

⎯ ⎯

2.2 V
mΩ

⎯

VDS = VGS, ID = 250μA

= 10V, ID = 11.2A

V

GS

VGS = 4.5V, ID = 10.A

S

V

= 5V, ID = 11.2A

DS

VGS = 0V, IS = 1A

5 A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R

G

Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 8 .Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

t

t

Q
Q

D(on

D(off

s
d

t

t

f

⎯
⎯
⎯

⎯

⎯

⎯

⎯
⎯
⎯
⎯
⎯

⎯

1886

372
128

2.0

19.5

44.6

4.8

4.6

5.8

23.7

35.4

7.7

⎯
⎯

pF

⎯
⎯ Ω
⎯

⎯

⎯

nC

⎯
⎯
⎯
⎯

ns

⎯

V

= 15V, VGS = 0V

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz

V

= 15V, VGS = 10V

DS

I

= 11.2A

D

V

= 10V, VDD = 15V, RG = 3Ω,

GS

R

= 1.2Ω

L

POWERDI is a registered trademark of Diodes Incorporated.

DMS3016SFG

Document number: DS35434 Rev. 7 - 2

3 of 7

www.diodes.com

October 2012

© Diodes Incorporated