Diodes DMS3015SSS User Manual

Features

• DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:

• Low R

• Low V

• Low Q

diode switching losses

• Low gate capacitance (Q
through or cross conduction currents at high frequencies

• Avalanche rugged – I

• Lead Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

- minimizes conduction losses

DS(ON)

- reducing the losses due to body diode conduction

SD

- lower Qrr of the integrated Schottky reduces body

rr

) ratio – reduces risk of shoot-

g/Qgs

and EAR rated

AR

DMS3015SSS

N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Marking Information: See Page 5

• Ordering Information: See Page 5

• Weight: 0.072 grams (approximate)

Top View

S

S
S
G

Top View

Internal Schematic

D

D
D
D

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 3) VGS = 10V
Pulsed Drain Current (Note 4)

Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.3mH

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T

= 25°C (Note 3) R

A

Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on 1in * 1in FR-4 PCB with 2oz. Copper. The value in any given application depends on the user’s specific board design.

4. Repetitive rating, pulse width limited by junction temperature.

5. I

and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C

AR

DMS3015SSS

Document number: DS32096 Rev. 4 - 2

Steady

State

T

= 25°C

A

T

= 85°C

A

1 of 6

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V

DSS

V

GSS

I

D

I

DM

IAR

E

AR

P

D

θJA

T

, T

J

STG

30 V

±20 V

11

6.6

A

80 A
17 A
43 mJ

1.55 W

81.3 °C/W

-55 to +150 °C

September 2010

© Diodes Incorporated

)

g

g

g

)

r

)

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance

NEW PRODUCT

Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

30

BV

V

R

DSS

I

DSS

I

GSS

GS(th

DS (ON)

|Y

|

fs

V

SD

C

iss

C

oss

C

rss

R

Q

s

Q

d

t

D(on

t

t

D(off

t

f

30 - - V

- - 0.1 mA

- - ±100 nA

1.0 1.5 2.5 V

-

8.5

-

9.5

11.9

14.9

- 18 - S

- 0.45 0.55 V

- 1276 -

- 160 -

- 136 -

0.3 1.48 2.7

- 14.3 -

- 30.6 -

- 3.4 -

- 4.3 -

- 15.8 -

- 27.8 -

- 29.7 -

- 13.6 -

30

DMS3015SSS

VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250μA

= 10V, ID = 11A

V

mΩ

GS

VGS = 4.5V, ID = 8.8A
VDS = 5V, ID = 10A
VGS = 0V, IS = 1A

pF
pF
pF
Ω
nC
nC
nC
nC

= 15V, VGS = 0V,

V

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz

= 15V, VGS = 4.5V, ID = 8.8A

V

DS

= 15V, VGS = 10V, ID = 8.8A

V

DS

ns
ns
ns

= 4.5V, VDS = 15V,

V

GS

R

= 1.8Ω, ID =8.8A

G

ns

V = 4.5V

25

20

GS

V = 4.0V

GS

V = 3.5V

GS

V = 3.0V

GS

15

10

D

I , DRAIN CURRENT (A)

V = 2.5V

GS

D

I , DRAIN CURRENT (A)

5

V = 2.0V

GS

0

0 0.5 1.0 1.5 2.0

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristics

V = 5V

25

DS

20

15

10

T = 150°C

A

T = 125° C

5

0

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

012 34

V , GATE SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

DMS3015SSS

Document number: DS32096 Rev. 4 - 2

2 of 6

www.diodes.com

September 2010

© Diodes Incorporated