Diodes DMS3014SSS User Manual

NEW PRODUCT

N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

Features

• DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:

• Low R

• Low V

• Low Q

diode switching losses

• Low gate capacitance (Q
through or cross conduction currents at high frequencies

• Avalanche rugged – I

• Lead Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

- minimizes conduction losses

DS(ON)

- reducing the losses due to body diode conduction

SD

- lower Qrr of the integrated Schottky reduces body

rr

) ratio – reduces risk of shoot-

g/Qgs

and EAR rated

AR

Top View

DMS3014SSS

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Marking Information: See Page 5

• Ordering Information: See Page 5

• Weight: 0.072 grams (approximate)

S

S
S
G

Top View

Internal Schematic

D

D
D
D

Maximum Ratings @T

= 25°C unless otherwi se specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 3) VGS = 4.5V
Pulsed Drain Current (Note 4)

Avalanche Current (Notes 4 & 5)
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.1mH

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T
Operating and Storage Temperature Range

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on 1in * 1in FR-4 PCB with 2oz. Copper. The value in any given application depends on the user’s specific board design.

4. Repetitive rating, pulse width limited by junction temperature.

5. I

and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C.

AR

DMS3014SSS

Document number: DS32265 Rev. 3 - 2

= 25°C (Note 3) R

A

Steady

State

A = 25°C

T
T

A = 85°C

1 of 6

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V

DSS

V

GSS

I

D

I

DM

IAR

E

AR

P

D

JA

T

, T

J

STG

30 V

±12 V

10.4

6.6

A

63 A
30 A
45 mJ

1.55 W

81.3 °C/W

-55 to +150 °C

September 2010

© Diodes Incorporated

)

g

g

g

)

r

)

R

CUR

RENT

RAIN C

URR

N

T

NEW PRODUCT

Electrical Characteristics @ T

= 25°C unless otherwise stated

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

I
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y

V
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C
C
C

Gate Resistance
Total Gate Charge VGS = 4.5V Qg
Total Gate Charge VGS = 10V Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time

Q

Q

t

D(on

Turn-On Rise Time
Turn-Off Delay Time

t

D(off

Turn-Off Fall Time

Notes: 6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

30

V = 4.5V

GS

25

V = 4.0V

GS

V = 3.5V

GS

V = 2.5V

GS

DSS
DSS
GSS

SD

I

S

iss

oss
rss

R

t

t

30 - - V

- - 100

- - ±100 nA

1.0 - 2.2 V

-

|

fs

- 23 - S

- 0.37 0.5 V

- - 5 A -

- 2296 - pF

- 164 - pF

- 120 - pF

0.26 1.3 2.34 

9

10

- 19.3 - nC

- 45.7 - nC

s
d

f

- 5.0 - nC

- 2.9 - nC

- 5.5 - ns

- 24.4 - ns

- 33.1 - ns

- 6.6 - ns

30

25

13
14

V = 5V

DS

DMS3014SSS

VGS = 0V, ID = 250μA

μA

VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V

VDS = VGS, ID = 250A

= 10V, ID = 10.4A

V

m

GS

VGS = 4.5V, ID = 10.4A
VDS = 5V, ID = 10.4A
VGS = 0V, IS = 1A

= 15V, VGS = 0V,

V

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz

V

= 15V, VGS = 10V, ID = 10.4A

DS

V

= 10V, VDS = 15V,

GS

= 3, RL = 1.2

R

G

(A)

20

V = 3.0V

GS

15

AIN

10

D

I, D

5

0

0 0.5 1 1.5 2

V , DRAIN-SOURCE VOLTAGE (V)

DS

V = 2.2V

V = 2.0V

Fig. 1 Typical Output Ch ar acteristic

GS

GS

(A)

20

E

V = 150°C

GS

V = 125°C

GS

V = 85°C

GS

D

I, D

15

10

5

0

0 1 1.5 2 2.5 3

0.5
V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristic

V = 25°C

GS

V = -55°C

GS

DMS3014SSS

Document number: DS32265 Rev. 3 - 2

2 of 6

www.diodes.com

September 2010

© Diodes Incorporated