Diodes DMS3014SFG User Manual

DMS3014SFG

30V N-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI

®

Pin 1

S

Features and Benefits

• DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:

• Low R

• Low V

• Low Q

– minimize conduction losses

DS(ON)

– reducing the losses due to body diode conduction

SD

– lower Qrr of the integrated Schottky reduces body

rr

diode switching losses

• Low gate capacitance (Q

) ratio – reduces risk of shoot-

g/Qgs

through or cross conduction currents at high frequencies

• Small form factor thermally efficient package enables higher
density end products

• Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product

• 100% UIS (Avalanche) rated

• 100% Rg tested

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: POWERDI3333-8

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.072 grams (approximate)

Drain

8765

G

Gate

234

1

Top View

Pin Configuration

Internal Schematic

Source

Product Summary

I

max

D

V

(BR)DSS

R

13m @ V

DS(ON)

max

= 10V

GS

TA = 25°C

9.5A

30V

14m @ VGS = 4.5V

9.0A

ADVANCE INFORMATION

Description and Applications

This MOSFET has been designed to minimize the on-state resistance
(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

• Backlighting

• Power Management Functions

• DC-DC Converters

Top View

D

D

D

D

S

S

Bottom View

Ordering Information (Note 4)

Part Number Case Packaging

DMS3014SFG-7 POWERDI3333-8 2000/Tape & Reel

DMS3014SFG-13 POWERDI3333-8 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com.

POWERDI is a registered trademark of Diodes Incorporated

DMS3014SFG

Document number: DS35594 Rev. 6 - 2

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

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θ

DMS3014SFG

Marking Information

Maximum Ratings @T

Drain-Source Voltage
Gate-Source Voltage

ADVANCE INFORMATION

Continuous Drain Current (Note 6) VGS = 10V

Continuous Drain Current (Note 6) VGS = 4.5V

Pulsed Drain Current (10s pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 7) L = 0.1mH
Repetitive Avalanche Energy (Note 7) L = 0.1mH

S29 = Product Type Marking Code

YYWW

S29

= 25°C unless otherwise specified

A

YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)

Characteristic Symbol Value Units

30 V

±12 V

9.5

7.6

13.0

9.7

9.0

7.4

12.2

9.3

A

A

A

A

80 A

3.0 A
30 A
45 mJ

Steady

State
t<10s

Steady

State
t<10s

T

= 25°C

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

T

= 25°C

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

I

S

I

AR

E

AR

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)

Steady state

t<10s 72 °C/W

Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)

Steady state

t<10s 35 °C/W
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. I

and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C

AR

P

R

P
R
R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

1 W

131 °C/W

2.1 W
63 °C/W

7.1 °C/W

-55 to +150 °C

POWERDI is a registered trademark of Diodes Incorporated

DMS3014SFG

Document number: DS35594 Rev. 6 - 2

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May 2012

© Diodes Incorporated

R

C

URRENT

P, P

T

R

T P

O

R

θ

T

R

T T

HER

R

TANC

DMS3014SFG

100

R

DS(on)

Limited

P = 10sWµ

10

(A)

DC

P = 10s

1

AIN

D

0.1

-I , D

0.01

0.1 1 10

ADVANCE INFORMATION

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

T = 150°C

J(max)

T = 25°C

A

Single Pulse

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 SOA, Safe Operat ion Area

1

D = 0.9
D = 0.7

E

D = 0.5
D = 0.3

100

100

90

(W)

80
70

IWE

Single Pulse
R = 61C/W
R = r * R

T - T = P * R

60
50

ANSIEN

40
30

EAK

20

(PK)

10

0

0.001 0.01 0.1 1 10 100 1,0000.0001
t1, PULSE DURATION TIME (sec)

Fig. 2 Single Pulse Maximum Power Dissipation

°

θ

JA

θθ

JA(t) (t) JA

JA JA(t)

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

D = Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

R = r * R

θ

JA(t) (t)

R = 60C/W

JA

Duty Cycle, D = t1/t2

θθJA

°

t1, PULSE DURATION TIME (sec)

Fig. 3 Transi ent Thermal Resis t ance

POWERDI is a registered trademark of Diodes Incorporated

DMS3014SFG

Document number: DS35594 Rev. 6 - 2

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www.diodes.com

May 2012

© Diodes Incorporated