Diodes DMS3012SFG User Manual

30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

Product Summary

I

V

R

(BR)DSS

10m @ V

30V

15m @ VGS = 4.5V

Package

DS(ON)

= 10V

GS

POWERDI

3333-8

D

TA = +25°C

12A

9.5A

Description

This MOSFET has been designed to minimize the on-state resistance
(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

Applications

• Backlighting

• Power Management Functions

• DC-DC Converters

Top View

D

D

D

D

Bottom View

Pin 1

S

S

S

G

DMS3012SFG

POWERDI

Features

• DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:

 Low R
 Low V
 Low Q

– minimize conduction losses

DS(ON)

– reducing the losses due to body diode conduction

SD

– lower Qrr of the integrated Schottky reduces body

rr

diode switching losses

 Low gate capacitance (Q

) ratio – reduces risk of shoot

g/Qgs

through or cross conduction currents at high frequencies

• Small form factor thermally efficient package enables higher
density end products

• Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product

• 100% UIS (Avalanche) rated

• 100% Rg tested

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: POWERDI3333-8

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208

• Weight: 0.072 grams (approximate)

Drain

8765

Gate

Source

234

1

Top View

Pin Configuration

Internal Schematic

®

Ordering Information (Note 4)

Part Number Case Packaging

DMS3012SFG-7 POWERDI3333-8 2000/Tape & Reel

DMS3012SFG-13 POWERDI3333-8 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

POWERDI is a registered trademark of Diodes Incorporated.

DMS3012SFG

Document number: DS35441 Rev. 7 - 2

1 of 8

www.diodes.com

October 2012

© Diodes Incorporated

θ

Marking Information

Maximum Ratings (@T

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Continuous Drain Current (Note 6) VGS = 4.5V

Pulsed Drain Current (10s pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 7) L = 0.1mH
Repetitive Avalanche Energy (Note 7) L = 0.1mH

YYWW

N12

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Steady

State
t < 10s
Steady

State
t < 10s

N12 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)

V

DSS

V

GSS

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

I

D

I

D

I

D

I

D

I

DM

I

S

I

AR

E

AR

DMS3012SFG

30 V

±20 V

12

9.5

16.0

12.7

9.5

7.5

13.0

10.3
90 A

3.5 A
17 A
43 mJ

A

A

A

A

Thermal Characteristics

Characteristic Symbol Value Units

T

= +25°C

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. I

and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C

AR

A

TA = +70°C

Steady state

t < 10s 74

= +25°C

T

A

TA = +70°C

Steady State

t < 10s 31

P

R

P

R
R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

POWERDI is a registered trademark of Diodes Incorporated.

DMS3012SFG

Document number: DS35441 Rev. 7 - 2

2 of 8

www.diodes.com

0.89

0.55
145

2.2

1.3

W

°C/W

W

58

°C/W

11

-55 to +150 °C

October 2012

© Diodes Incorporated

RAIN CUR

R

N

T

P

P

T

R

T P

O

R

T

R

T T

HER

R

TANC

DMS3012SFG

(A)
E

-I , D

100

D

10

1

0.1

100

(W)

IWE

ANSIEN

EAK
,

(PK)

90
80
70
60
50
40
30
20

Single Pulse

°

R = 61C/W

θ

JA

R = r * R

θθ

JA(t) (t) JA

T - T = P * R

JA JA(t)

θ

10

0.01

0.1 1 10 100

-V , DRAIN-SOURCE VOL TAGE (V)

DS

Fig. 1 SOA, Safe Opera t ion Area

1

D = 0.9
D = 0.7

E

D = 0.5
D = 0.3

0

0.001 0.01 0.1 1 10 100 1,000

0.0001
t1, PULSE DURATION TIME (sec)

Fig. 2 Single Pulse Maximum Power Dissipation

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

D = Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

R = r * R

θ

JA(t) (t)

R = 61C/W

JA

Duty Cycle, D = t1/t2

θθJA

°

t1, PULSE DURATION TIME (sec)

Fig. 3 Transient Therma l R esistan ce

POWERDI is a registered trademark of Diodes Incorporated.

DMS3012SFG

Document number: DS35441 Rev. 7 - 2

3 of 8

www.diodes.com

October 2012

© Diodes Incorporated