Diodes DMS2220LFDB User Manual

P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR

Features

• Low On-Resistance

• 95mΩ @V

• 120mΩ @V

• 86mΩ (typ) @V

• Low Gate Threshold Voltage, -1.3V Max

• Fast Switching Speed

• Low Input/Output Leakage

• Incorporates Low V

• Low Profile, 0.5mm Max Height

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

= -4.5V

= -2.5V

= -1.8V

Super Barrier Rectifier (SBR)

U-DFN2020-6

Type B

Bottom View

Mechanical Data

• Case: U-DFN2020-6 Type B

• Case Material: Molded Plastic, “Green” Molding Compound. UL

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

• Weight: 0.0065 grams (approximate)

ANCD

123

456

Top View

Internal Schematic

DMS2220LFDB

SUPER BARRIER RECTIFIER

Flammability Classification Rating 94V-0

per MIL-STD-202, Method 208

Bottom View

Pin Configuration

Ordering Information (Note 4)

Part Number Case Packaging

DMS2220LFDB-7 U-DFN2020-6 Type B 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SBR is a registered trademark of Diodes Incorporated.

DMS2220LFDB

Document number: DS31546 Rev. 9 - 2

ME = Marking Code YM = Date Code Marking Y = Year (ex: V = 2008)

M = Month (ex: 9 = September) Dot denotes Pin 1

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)

(BR)

DMS2220LFDB

Maximum Ratings – TOTAL DEVICE (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range

θJA

, T

STG

1.4 W 89 °C/W

-55 to +150 °C

Maximum Ratings – P-CHANNEL MOSFET – Q1 (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage Drain Current (Note 5) Pulsed Drain Current (Note 6)

DSS

GSS

-20 V

±12 V

-3.5 A

-12 A

Maximum Ratings – SBR – D1 (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current Non-Repetitive Peak Forward Surge Current

8.3ms single half sine-wave superimposed on rated load

Electrical Characteristics – P-CHANNEL MOSFET – Q1 (@T

R(RMS

RRM

RWM

FSM

20 V

= +25°C, unless otherwise specified.)

14 V

1 A

3 A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current

Gate-Source Leakage

DSS

GSS

-20 — — V — — -1 µA

— —

±100 ±800

VGS = 0V, ID = -250µA VDS = -20V, VGS = 0V

= ±8V, VDS = 0V

= ±12V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage (Note 7)

GS(th

DS(ON)

|Y V

-0.45 — -1.3 V

60 74 86

— — —

— 8 — S

— 0.7 -1.2 V

120

—

VDS = VGS, ID = -250µA

= -4.5V, ID = -2.8A

VGS = -2.5V, ID = -2.0A

mΩ

VGS = -1.8V, ID = -1.0A

VDS = -5V, ID = -2.8A VGS = 0V, IS = -1.6A

DYNAMIC CHARACTERISTICS

Input Capacitance Output Capacitance Reverse Transfer Capacitance

iss

oss

rss

— 632 — pF — 65 — pF — 54 — pF

= -10V, VGS = 0V

f = 1.0MHz

Electrical Characteristics – SBR – D1 (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

Reverse Breakdown Voltage (Note 7)

Forward Voltage

Reverse Current (Note 7)

Notes: 5. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

20 — — V

— —

— — 100 µA

0.45

0.52

IR = 1mA

= 0.5A

= 1.0A

VR = 20V

SBR is a registered trademark of Diodes Incorporated.

DMS2220LFDB

Document number: DS31546 Rev. 9 - 2

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RAIN CUR

REN

CUR

RENT

RAIN-SOUR

CE O

N-R

TAN

RAIN-SOUR

CE O

N-R

TAN

OUR

DMS2220LFDB

Q1 - P-CHANNEL MOSFET

(A)

V = -8.0V

V = -4.5V

V = -2.5V

V = -2.0V

V = -1.5V

-I , D

V = -1.2V

V = -1.0V

01 2 3 45

-V , DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

0.14

E ( )

0.12

V = -5V

(A)

AIN

-I , D

0.5 1.0 1.5 2.0

0.14

T = 150°C

T = 125°C

-V , GATE SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristics

T = 85°C

T = 25°C

T = -55°C

E ( )

0.12

0.1

ESIS

0.08

V = -1.8V

V = -2.5V

0.06

V = -4.5V

0.04

, D

0.02

DS(ON)

012345678

-I , DRAIN CURRENT (A)

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

1.6

1.4

AIN-S

, D

DS(ON)

1.2

1.0

0.8

ON-RESISTANCE (NORMALIZED)

V = -2.5V

I = -2A

V = -4.5V

I = -5A

0.1

ESIS

T = 125°C

T = 150°C

0.08

T = 85°C

0.06

0.04

T = -55°C

T = 25°C

, D

0.02

DS(ON)

01234 5678

-I , DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

0.11

0.09

V = -2.5V

I = -2A

0.07

V = -4.5V

I = -5A

0.05

0.6

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

Fig. 5 On-Resistance Variation with Temperature

DS(ON)

0.03

R , DRAIN-SOURCE ON-RESISTANCE ( )

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

Fig. 6 On-Resistance Variation with Temperature

SBR is a registered trademark of Diodes Incorporated.

DMS2220LFDB

Document number: DS31546 Rev. 9 - 2

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January 2013

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