Diodes DMS2120LFWB User Manual

Features

• Low On-Resistance

• 95mΩ @V

• 120mΩ @V

• 150mΩ (typ) @V

• Low Gate Threshold Voltage, -1.3V Max

• Fast Switching Speed

• Low Input/Output Leakage

• Incorporates Low V

• Low Profile, 0.5mm Max Height

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

= -4.5V

GS

= -2.5V

GS

= -1.8V

GS

Super Barrier Rectifier (SBR)

F

U-DFN3020-8

Type B

Top View

Bottom View

DMS2120LFWB

P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR

SUPER BARRIER RECTIFIER

Mechanical Data

• Case: U-DFN3020-8 Type B

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.011 grams (approximate)

S

G

D

Equivalent Circuit

K

K
K
D
D

A

Bottom View

e4

A
A
S

G

®

Ordering Information (Note 4)

Part Number Case Packaging

DMS2120LFWB-7 DFN3020B-8 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SBR is a registered trademark of Diodes Incorporated.

MF

YM

DMS2120LFWB

Document number: DS31667 Rev. 5 - 2

MF = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)

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September 2012

© Diodes Incorporated

θ

)

)

(BR)

Maximum Ratings – TOTAL DEVICE (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Maximum Ratings – P-CHANNEL MOSFET – Q1 (@T

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current (Note 6)

NEW PRODUCT

Maximum Ratings – SBR – D1 (@T

Characteristic Symbol Value Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current

8.3ms single half sine-wave superimposed on rated load

= +25°C, unless otherwise specified.)

A

P

D

R

JA

T

, T

J

STG

= +25°C, unless otherwise specified.)

A

V

DSS

V

GSS

I

D

I

DM

V

RRM

V

RWM

V

R

V

R(RMS

I

O

I

FSM

1.5 W
85

-55 to +150

-20 V

±12 V

-2.9 A

-10 A

20 V

14 V

1 A
3 A

DMS2120LFWB

°C/W

°C

Electrical Characteristics – P-CHANNEL MOSFET – Q1 (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

DSS

I

GSS

-20

DSS

⎯ ⎯

⎯ ⎯ ⎯

⎯ ⎯

-1

±100
±800

⎯

V

VGS = 0V, ID = -250μA

μA

VDS = -20V, VGS = 0V

= ±8V, VDS = 0V

V

GS

nA

V

= ±12V, VDS = 0V

GS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 7)

V

R

DS (ON)

|Y
V

GS(th

| ⎯

fs

⎯

SD

-0.45

⎯
⎯

⎯

-1.3 V

⎯

70

95

84

120
150

⎯

mΩ

S

100

8

0.42 -1.2 V

VDS = VGS, ID = -250μA
V

= -4.5V, ID = -2.8A

GS

VGS = -2.5V, ID = -2.0A
VGS = -1.8V, ID = -1.0A
VDS = -5V, ID = -2.8A
VGS = 0V, IS = -1.0A

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C

iss

C

oss

C

rss

⎯

⎯

⎯

632

65
54

⎯
⎯
⎯

pF
pF
pF

V

= -10V, VGS = 0V

DS

f = 1.0MHz

Electrical Characteristics – SBR – D1 (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

Reverse Breakdown Voltage (Note 7)
Forward Voltage

V

V

Reverse Current (Note 7)

Notes: 5. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.

7. Short duration pulse test used to minimize self-heating effect.

6. Repetitive rating, pulse width limited by junction temperature.

20

R

⎯

F

⎯ ⎯ ⎯

I

⎯ ⎯

R

⎯ ⎯

0.45

0.52
80

V
V

μA

IR = 1mA

= 0.5A

I

F

I

= 1.0A

F

VR = 20V

SBR is a registered trademark of Diodes Incorporated.

DMS2120LFWB

Document number: DS31667 Rev. 5 - 2

2 of 7

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September 2012

© Diodes Incorporated

RAIN

CUR

REN

T

R

CUR

RENT

R

RAIN-SOUR

CE O

N-R

TAN

C

R

RAIN-SOUR

CE O

N-R

TAN

C

R

R

OUR

C

NEW PRODUCT

DMS2120LFWB

Q1, P-CHANNEL MOSFET

10

8

(A)

V = -8.0V

GS

V = -4.5V

GS

V = -2.5V

GS

V = -2.0V

GS

6

-I , D

4

D

V = -1.5V

GS

2

V = -1.2V

V = -1.0V

0

01 2 3 45

-V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

GS

Fig. 1 Typical Output C har acteristic s

0.14

Ω

E ( )

0.12

10

V = -5V

DS

8

(A)

6

AIN

4

D

-I , D
2

0

T = 150°C

A

T = 125°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

0.5 1 1.5 2

-V , GATE SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

0.14

Ω

E ( )

0.12

0.1

ESIS

0.08

V = -1.8V

GS

V = -2.5V

0.06

GS

V = -4.5V

GS

0.04

, D

0.02

DS(ON)

0

012345678

-I , DRAIN CURRENT (A)

D

Fig. 3 Typical On-Resistance

vs. Drain C urrent and G ate V ol tage

1.6

1.4

E

AIN-S
, D

DS(ON)

1.2

1.0

0.8

ON-RESISTA NCE (NORMA LIZED)

V = -2.5V

GS

I = -2A

D

V = -4.5V

GS

I = -5A

D

0.1

ESIS

T = 125°C

A

T = 150°C

A

0.08

T = 85°C

0.06

0.04

T = -55°C

A

T = 25°C

A

A

, D

0.02

DS(ON)

0

01234 5678

-I , DRAIN CURRENT (A)

D

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain C urrent and Temperature

Ω

0.11

0.09

V = -2.5V

GS

I = -2A

D

0.07

V = -4.5V

GS

I = -5A

D

0.05

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

Fig. 5 On-Resistance Variation with T emperature

SBR is a registered trademark of Diodes Incorporated.

DMS2120LFWB

Document number: DS31667 Rev. 5 - 2

3 of 7

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DS(ON)

0.03

R , DRAIN-SOURCE ON-RESISTANCE ( )

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERA TURE (°C)

J

Fig. 6 On-Resistance Variation with Temperature

September 2012

© Diodes Incorporated