Diodes DMS2095LFDB User Manual

Product Summary

MOSFET

V

R

(BR)DSS

95mΩ @ V

-20V

VR V

20V

120mΩ @ VGS = -2.5V

150mΩ @ VGS = -1.8V

SCHOTTKY DIODE

400mV @ I

470mV @ IF = 1.0A

DS(on) max

I

= -4.5V

GS

IO

F max

= 0.5A

F

Description and Applications

NEW PRODUCT

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

• Power management functions

) and yet maintain superior switching

DS(ON)

U-DFN2020-6

Type B

S

D

D

NC

A

Pin1

Bottom View

G

K

D

-3.4A

-3.0A

-2.7A

1.0A

K

DMS2095LFDB

P-CHANNEL ENHANCEMENT MODE MOSFET

WITH INTEGRATED SCHOTTKY DIODE

Features and Benefits

• MOSFET with Low R

• Low Gate Threshold Voltage, -1.3V Max

• Schottky Diode with Low Forward Voltage Drop

• Low Profile, 0.5mm Max Height

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

– minimize conduction losses

DS(ON)

Mechanical Data

• Case: U-DFN2020-6 Type B

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.0065 grams (approximate)

D

e4

A

G

S

Q1 P-MOSFET

D1 SCHOTTKY DIODE

K

Ordering Information (Note 4)

Part Number Case Packaging

DMS2095LFDB-7 U-DFN2020-6 Type B 3,000/Tape & Reel

DMS2095LFDB-13 U-DFN2020-6 Type B 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

MS2

DMS2095LFDB

Document number: DS35955 Rev. 3 - 2

MS2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)

YM

M = Month (ex: 9 = September)

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April 2014

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Maximum Ratings – P-CHANNEL MOSFET – Q1 (@T

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage (Note 5)

Steady

Continuous Drain Current (Note 7) VGS = -4.5V

State

t<10s

Maximum Body Diode Forward Current (Note 7)

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Maximum Ratings – SCHOTTKY – D1 (@T

NEW PRODUCT

A

Characteristic Symbol Value Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

Average Rectified Output Current (Note 7, t<10s)

Peak Repetitive Forward Current (Note 7, t<10s)

Non-Repetitive Peak Forward Surge Current (Note 7, t<10s)
Single half sine-wave superimposed on rated load

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

= +25°C

T

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Total Power Dissipation (Note 7)

Thermal Resistance, Junction to Ambient (Note 7)

A

TA = +70°C

Steady State

t<10s 114

= +25°C

T

A

TA = +70°C

Steady State

t<10s 57

Thermal Resistance, Junction to Case (Note 7)

Operating and Storage Temperature Range

Notes: 5. AEC-Q101 VGS maximum is ±9.6V

DMS2095LFDB

Document number: DS35955 Rev. 3 - 2

6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

www.diodes.com

= +25°C, unless otherwise specified.)

A

V

DSS

V

GSS

= +25°C

T

A

= +70°C

T

A

T

= +25°C

A

= +70°C

T

A

I

D

I

D

I

S

I

DM

= +25°C, unless otherwise specified.)

V

RRM

V

RWM

V

R

I

O

I

FRM

I

FSM

P

D

R

JA

θ

P

D

R

JA

θ

R

JC

θ

T

J, TSTG

2 of 7

DMS2095LFDB

-20 V

±12 V

-3.4

-2.7

-3.9

-3.1

-1 A

-10 A

20 V

1 A

2 A

20 A

0.81

0.52

154

1.64

1.04

77

27.5 °C/W

-55 to +150 °C

A

A

W

°C/W

W

°C/W

April 2014

© Diodes Incorporated

Electrical Characteristics – P-CHANNEL MOSFET – Q1 (@T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-20

⎯ ⎯

⎯ ⎯

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

V

GS(th)

-0.4

⎯

Static Drain-Source On-Resistance

R

DS (ON)

⎯
⎯

Diode Forward Voltage

V

SD

⎯

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

NEW PRODUCT

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Reverse Recovery Time

Reverse Recovery Charge

C

⎯

iss

C

⎯

oss

C

rss

R

g

Q

g

Q

gs

Q

gd

t

⎯

D(on)

t

⎯

r

t

D(off)

t

⎯

f

t

⎯

rr

Q

rr

⎯

⎯

⎯

⎯

⎯

⎯

⎯

Electrical Characteristics – SCHOTTKY – D1 (@T

Characteristic Symbol Min Typ Max Unit Test Condition

Reverse Breakdown Voltage (Note 8)

Forward Voltage (Note 8)

Reverse Current (Note 8)

Notes: 8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing

V

(BR)R

V

F

I

⎯

R

20 35

⎯
⎯

DMS2095LFDB

Document number: DS35955 Rev. 3 - 2

3 of 7

www.diodes.com

= +25°C, unless otherwise specified.)

A

⎯

0.40

0.47

V

VGS = 0V, ID = -250μA

VDS = -20V, VGS = 0V

nA

VGS = ±12V, VDS = 0V

VDS = VGS, ID = -250μA

V

= -4.5V, ID = -2.8A

GS

mΩ

VGS = -2.5V, ID = -2.0A

VGS = -1.8V, ID = -1.0A

VGS = 0V, IS = -1.0A

pF

= -10V, VGS = 0V

V

pF

pF

nC

nC

nC

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz

V

= -4.5V, VDS = -10V,

GS

= -2.5A

I

D

ns

ns

ns

= -10V, VGS = -4.5V,

V

DD

= 4Ω, RG = 6Ω

R

L

ns

ns

nC

= -2.5A, di/dt = 100A/μs

I

F

V

V

⎯ ⎯

-1 μA

±800

⎯

48
65
90

-1.3 V

95
120
150

-0.42 -1.2 V

561

78

66

59.5

7.0

0.9

1.7

5.3

5.8

69

54

12.4

3.7

= +25°C, unless otherwise specified.)

A

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

—
—

30 80 μA

DMS2095LFDB

IR = 1mA

= 0.5A

I

F

I

= 1.0A

F

VR = 20V

April 2014

© Diodes Incorporated