Diodes DMS2095LFDB User Manual

Product Summary

MOSFET

V

R

(BR)DSS

95mΩ @ V

-20V

VR V

20V

120mΩ @ VGS = -2.5V

150mΩ @ VGS = -1.8V

SCHOTTKY DIODE

400mV @ I

470mV @ IF = 1.0A

DS(on) max

I

= -4.5V

GS

IO

F max

= 0.5A

F

Description and Applications

NEW PRODUCT

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

• Power management functions

) and yet maintain superior switching

DS(ON)

U-DFN2020-6

Type B

S

D

NC

A

Pin1

Bottom View

G

K

D

-3.4A

-3.0A

-2.7A

1.0A

K

DMS2095LFDB

P-CHANNEL ENHANCEMENT MODE MOSFET

WITH INTEGRATED SCHOTTKY DIODE

Features and Benefits

• MOSFET with Low R

• Low Gate Threshold Voltage, -1.3V Max

• Schottky Diode with Low Forward Voltage Drop

• Low Profile, 0.5mm Max Height

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

– minimize conduction losses

DS(ON)

Mechanical Data

• Case: U-DFN2020-6 Type B

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.0065 grams (approximate)

D

e4

A

G

S

Q1 P-MOSFET

D1 SCHOTTKY DIODE

K

Ordering Information (Note 4)

Part Number Case Packaging

DMS2095LFDB-7 U-DFN2020-6 Type B 3,000/Tape & Reel

DMS2095LFDB-13 U-DFN2020-6 Type B 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

MS2

DMS2095LFDB

Document number: DS35955 Rev. 3 - 2

MS2 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008)

YM

M = Month (ex: 9 = September)

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April 2014

Maximum Ratings – P-CHANNEL MOSFET – Q1 (@T

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage (Note 5)

Steady

Continuous Drain Current (Note 7) VGS = -4.5V

State

t<10s

Maximum Body Diode Forward Current (Note 7)

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Maximum Ratings – SCHOTTKY – D1 (@T

NEW PRODUCT

A

Characteristic Symbol Value Unit

Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage

Average Rectified Output Current (Note 7, t<10s)

Peak Repetitive Forward Current (Note 7, t<10s)

Non-Repetitive Peak Forward Surge Current (Note 7, t<10s) Single half sine-wave superimposed on rated load

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

= +25°C

T

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Total Power Dissipation (Note 7)

Thermal Resistance, Junction to Ambient (Note 7)

A

TA = +70°C

Steady State

t<10s 114

= +25°C

T

A

TA = +70°C

Steady State

t<10s 57

Thermal Resistance, Junction to Case (Note 7)

Operating and Storage Temperature Range

Notes: 5. AEC-Q101 VGS maximum is ±9.6V

DMS2095LFDB

Document number: DS35955 Rev. 3 - 2

6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

www.diodes.com

= +25°C, unless otherwise specified.)

A

V

DSS

V

GSS

= +25°C

T

A

= +70°C

T

A

T

= +25°C

A

= +70°C

T

A

I

D

I

D

I

S

I

DM

= +25°C, unless otherwise specified.)

V

RRM

V

RWM

V

R

I

O

I

FRM

I

FSM

P

D

R

JA

θ

P

D

R

JA

θ

R

JC

θ

T

J, TSTG

2 of 7

DMS2095LFDB

-20 V

±12 V

-3.4

-2.7

-3.9

-3.1

-1 A

-10 A

20 V

1 A

2 A

20 A

0.81

0.52

154

1.64

1.04

77

27.5 °C/W

-55 to +150 °C

A

W

°C/W

W

°C/W

April 2014

Electrical Characteristics – P-CHANNEL MOSFET – Q1 (@T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-20

⎯ ⎯

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

V

GS(th)

-0.4

⎯

Static Drain-Source On-Resistance

R

DS (ON)

⎯ ⎯

Diode Forward Voltage

V

SD

⎯

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

NEW PRODUCT

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Reverse Recovery Time

Reverse Recovery Charge

C

⎯

iss

C

⎯

oss

C

rss

R

g

Q

g

Q

gs

Q

gd

t

⎯

D(on)

t

⎯

r

t

D(off)

t

⎯

f

t

⎯

rr

Q

rr

⎯

Electrical Characteristics – SCHOTTKY – D1 (@T

Characteristic Symbol Min Typ Max Unit Test Condition

Reverse Breakdown Voltage (Note 8)

Forward Voltage (Note 8)

Reverse Current (Note 8)

Notes: 8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing

V

(BR)R

V

F

I

⎯

R

20 35

⎯ ⎯

DMS2095LFDB

Document number: DS35955 Rev. 3 - 2

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= +25°C, unless otherwise specified.)

A

⎯

0.40

0.47

V

VGS = 0V, ID = -250μA

VDS = -20V, VGS = 0V

nA

VGS = ±12V, VDS = 0V

VDS = VGS, ID = -250μA

V

= -4.5V, ID = -2.8A

GS

mΩ

VGS = -2.5V, ID = -2.0A

VGS = -1.8V, ID = -1.0A

VGS = 0V, IS = -1.0A

pF

= -10V, VGS = 0V

V

pF

nC

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1MHz

V

= -4.5V, VDS = -10V,

GS

= -2.5A

I

D

ns

= -10V, VGS = -4.5V,

V

DD

= 4Ω, RG = 6Ω

R

L

ns

nC

= -2.5A, di/dt = 100A/μs

I

F

V

⎯ ⎯

-1 μA

±800

⎯

48 65 90

-1.3 V

95 120 150

-0.42 -1.2 V

561

78

66

59.5

7.0

0.9

1.7

5.3

5.8

69

54

12.4

3.7

= +25°C, unless otherwise specified.)

A

⎯

— —

30 80 μA

DMS2095LFDB

IR = 1mA

= 0.5A

I

F

I

= 1.0A

F

VR = 20V

April 2014

R

A

CUR

R

E

A

RAIN C

URREN

T

R

OUR

ON-R

R

OUR

ON-R

R

N

SOURC

E

R

A

SOU

R

C

E

ON-R

E

SIS

A

C

E

NEW PRODUCT

DMS2095LFDB

MOSFET Characteristics

10.0

V= -4.5V

GS

V= -2.5V

GS

V= -3.0V

GS

V= -4.0V

GS

)

NT (

IN

D

I, D

8.0

6.0

4.0

2.0

0.0 0 0.5 1 1.5 2 2.5 3

V , DRAIN -SOURCE VOLTAGE (V)

DS

V= -2.0V

GS

V= -1.2V

GS

Figure 1 Typical Output Characteristics

0.2

Ω

0.18

V= -1.5V

GS

V= -1.0V

GS

10

V = -5.0V

DS

9

8

7

(A)

6

5

4

3

D

I, D

2

1

0

0 0.5 1 1.5 2 2.5 3

T = 150CA°

T = 125CA°

V , GATE-SOURCE VOLTAGE (V)

GS

T = 85CA°

T = 25CA°

T = -55CA°

Figure 2 Typical Transfer Characteristics

0.1

V = -4.5V

Ω

0.09

GS

0.16

0.14

ESISTANCE ( )

V = -1.8V

GS

V = -2.5V

GS

CE

AIN-S

, D

0.12

0.1

0.08

0.06

0.04

0.02

DS(ON)

0

12345678910

I , DRAIN SOURCE CURRE NT (A)

D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

1.6

V = -4.5V

GS

I = -3A

D

1.2

-

AI

, D

0.8

DS(ON)

V = -4.5V

GS

V = -2.5V

GS

I = -1A

D

0.08

0.07

ESISTANCE ( )

T = 125CA°

T = 150CA°

T = 85CA°

0.06

T = 25CA°

T = -55CA°

CE

AIN-S

, D

0.05

0.04

0.03

0.02

0.01

DS(ON)

0

012345678910

I , DRAIN SOURCE CURRENT (A)

D

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

0.12

Ω

()

0.1

N T

IN-

0.08

0.06

0.04

-2.5

V= V

GS

-1

I= A

D

V = -4.5V

GS

I= A

-3

D

ON-RESISTANCE (NORMALIZED)

0.4

-50 -25 0 25 50 75 100 125 150

T, JUNCTION TEMPERATURE (C)J°

Figure 5 On-Resistance Variation with Temperature

, D

0.02

DS(on)

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)J°

Figure 6 On-Resistance Variation with Temperature

DMS2095LFDB

Document number: DS35955 Rev. 3 - 2

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April 2014

G

A

R

O

A

G

URCE CUR

R

N

GAT

E-S

OURCE VOLTAG

E

R

S

E

H

E

R

M

R

E

S

C

E

NEW PRODUCT

DMS2095LFDB

MOSFET Characteristics (cont.)

1

E (V)

0.8

LT

LD V

ESH

0.6

-I = 250µA

D

-I = 1 mAD

0.4

TE TH

0.2

GS(TH)

V,

0

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

Figure 7 Gate Threshold Variation vs. Ambient Temperature

10000

f = 1MHz

10

9

8

7

T (A) E

6

5

4

3

S

I, SO

2

1

0

0 0.3 0.6 0.9 1.2 1.5

T= 150CA°

T= 125CA°

T= 85CA°

V , SOURCE-DRAIN VOLTAGE (V)

SD

T= 25CA°

T= -55CA°

Figure 8 Diode Forward Voltage vs. Current

10

9

1000

100

C

T

C , JUNCTION CAPACITANCE (pF)

10

0 2 4 6 8 101214 161820

V , DRAIN-SOURCE VOLTAGE (V)

DS

rss

Figure 9 Typical Junction Capacitance

1

D = 0.9

D = 0.7

D = 0.5

D = 0.3

TAN I

0.1

D = 0.1

AL

D = 0.05

8

(V)

7

C

iss

C

oss

6

5

4

V = -10V

DS

I= -2.5A

D

3

2

GS

V,

1

0

0 3 6 9 12 15

Q , TOTAL GATE CHARGE (nC)

g

Figure 10 Gate-Charge Characteristics

D = 0.02

NT T I

0.01

D = 0.01

AN

D = 0.005

r(t), T

Single Pulse

R (t) = r(t) * R

θθ

JA JA

R = 155°C/W

θ

JA

Duty Cycle, D = t1/ t2

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t1, PULSE DURATION TIMES (sec)

Figure 11 Transient Thermal Resistance

DMS2095LFDB

Document number: DS35955 Rev. 3 - 2

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April 2014

T

O

U

O

RWARD CUR

R

T

O

US R

R

CUR

R

T

DMS2095LFDB

Schottky Characteristics

NEW PRODUCT

10

(A)

EN

1

T = 150°C

A

T = 125°C

A

S F

T = 85°C

0.1

ANE

A

T = 25°C

A

AN

T = -55°C

A

F

I , INS

0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

V , INSTANTANEOUS FORWARD VOLTAGE (mV)

F

Figure 12 Typical Forward Characteristics

100000

(µA)

10000

EN

SE

EVE

ANE

AN

R

I , INS

T = 150°C

A

T = 125°C

A

T = 85°C

1000

100

T = 25°C

A

T = -55°C

A

10

1

0.1 0 2 4 6 8 10 12 14 16 18 20

V , INSTANTANEOUS REVERSE VOLTAGE (V)

R

Figure 13 Typical Reverse Characteristics

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Pin#1 ID

A

A1

D

D2

z

A3

SEATING PLANE

d

E

E2

f

e

f

L

b

U-DFN2020-6

Type B

Dim Min Max Typ

A 0.545 0.605 0.575

A1 0 0.05 0.02 A3

⎯ ⎯

0.13

b 0.20 0.30 0.25

D 1.95 2.075 2.00

d

⎯ ⎯

0.45

D2 0.50 0.70 0.60

e

⎯ ⎯

0.65

E 1.95 2.075 2.00

E2 0.90 1.10 1.00

f

⎯ ⎯

0.15

L 0.25 0.35 0.30 z

⎯ ⎯

0.225

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y

X2

DMS2095LFDB

Document number: DS35955 Rev. 3 - 2

G1

C

G

Dimensions Value (in mm)

Z 1.67 G 0.20

G1 0.40

X1

X1 1.0 X2 0.45

Y 0.37

Y1

Z

G

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Y1 0.70

C 0.65

April 2014

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

NEW PRODUCT

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMS2095LFDB

Document number: DS35955 Rev. 3 - 2

7 of 7

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April 2014

Diodes DMS2095LFDB User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual