Diodes DMP6250SE User Manual

Y

Y

Product Summary

V

R

(BR)DSS

-60V

DS(on)

250mΩ @ V

300mΩ @ V

GS

GS

T

= -10V

= -4.5V

Description

This MOSFET has been designed to minimize the on-state resistance

and yet maintain superior switching performance, making it ideal for

high efficiency power management applications.

Applications

• Motor Control

• DC-DC Converters

• Power Management Functions

ADVANCE INFORMATION

• Uninterrupted Power Supply

NEW PRODUCT

SOT223

Top View

I

D

= +25°C

A

-2.1A

-1.9A

Features and Benefits

• Low gate drive

• Low input capacitance

• Fast switching speed

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT223

• Case Material: Molded Plastic, “Green” Molding Compound.

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See diagram below

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

• Weight: 0.112 grams (approximate)

Pin Out - Top View

DMP6250SE

60V P-CHANNEL ENHANCEMENT MODE MOSFET

UL Flammability Classification Rating 94V-0

Solderable per MIL-STD-202, Method 208

e3

D

G

S

Equivalent Circuit

Ordering Information (Note 4)

Part Number Qualification Case Packaging

DMP6250SE-13 Standard SOT223 2,500 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

WW

P6250

DMP6250SE

Document Number DS36696 Rev. 1 - 2

WW

P6250

= Manufacturer’s Marking
P6250 = Marking Code
YWW = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YWW = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y= Year (ex: 3 = 2013)
WW = Week (01 - 53)

1 of 6

www.diodes.com

January 2014

© Diodes Incorporated

)

g

g

g

g

g

)

r

)

r

r

DMP6250SE

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source voltage
Gate-Source voltage (Note 5)

Continuous Drain current (Note 6) VGS = -10V

Maximum Body Diode Continuous Current
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Single Pulsed Avalanche Current (Note 7) L = 0.1mH
Single Pulsed Avalanche Energy (Note 7) L = 0.1mH

T

= +25°C

A

= +70°C

T

A

TC = +25°C

= +70°C

T

C

V

DSS

V

GS

I

D

I

D

I

S

I

DM

I

AS

E

AS

-60 V

±20

-2.1

-1.7

-6.1

-4.9

V

A

A

-1.8 A

-11 A

-12 A
8 mJ

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

ADVANCE INFORMATION

Total Power Dissipation (Note 6)

NEW PRODUCT

Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

= +25°C

T

A

TA = +70°C

T

= +25°C PD

C

P

R

R

T

J, TSTG

JA

JC

D

1.8

1.1

W

69 °C/W
14

8.7

W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-60

⎯ ⎯
⎯ ⎯
⎯ ⎯

V

-1 µA

±100

nA

ID = -250µA, VGS= 0V
V

= -60V, VGS= 0V

DS

V

= ±20V, VDS= 0V

GS

ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

GS(th

R

DS (ON)

V

SD

-1

⎯ ⎯

⎯

⎯ ⎯

-3 V
250
300

-1.2 V

VDS= VGS , ID= -250µA
V

m

V
V

= -10V, ID= -1.0A

GS

= -4.5V, ID= -0.5A

GS

= 0V, IS = -2.0A

GS

DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse recovery time
Reverse recovery charge

Notes: 5. AEC-Q101 VGS maximum is ±16V.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. IAR and EAR rating are based on low frequency and duty cycles to keep T

8. Short duration pulse test used to minimize self-heating effect.

9. For design aid only, not subject to production testing.

C
C
C

R
Q
Q

Q

Q

t

D(on

t

D(off

Q

t

iss

oss

rss

t

t

r

s

d

f

r

⎯
⎯
⎯

⎯

⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯

⎯

551

25.7

19.1

12.1

10.3

91.4

39.8

= 25°C

J

4.8

9.7

1.5

1.6

6.3

9.2

3.9

⎯
⎯
⎯

⎯

⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯

pF
pF
pF



nC
nC
nC
nC

ns
ns
ns
ns
ns

nC

V

DS

= -30V, V

GS

= 0V

f= 1MHz

V

= 0V, VGS= 0V, f = 1MHz

DS

V

= -30V, ID = -2A

DS

= -30V, VGS = -10V,

V

DS

R

= 50, ID = -1A

G

= -1A, di/dt= 100A/µs

I

S

DMP6250SE

Document Number DS36696 Rev. 1 - 2

2 of 6

www.diodes.com

January 2014

© Diodes Incorporated