Diodes DMP6185SK3 User Manual

60V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

R

(BR)DSS

-60V

DS(on)

150mΩ @ V

185mΩ @ VGS = -4.5V

= -10V

GS

T

Description

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

Applications

• Backlighting

• DC-DC Converters

• Power management functions

NEW PRODUCT

TO252

Top View Top View

I

D

= +25°C

C

-9.4A

-8.5A

Features

• 100% Unclamped Inductive Switch (UIS) test in production

• Low on-resistance

• Fast switching speed

• Totally Lead-Free & Fully RoHS compliant (Note 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TO252

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.33 grams (approximate)

D

D

GS

Pin-Out

G

Equivalent Circuit

DMP6185SK3

e3

D

S

Ordering Information (Notes 4)

Product Case Packaging

DMP6185SK3-13 TO252 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html .

Marking Information

P6185S

YYWW

= Manufacturer’s Marking

.

P6185S = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)

DMP6185SK3

Document Number DS36658 Rev. 1 - 2

1 of 6

www.diodes.com

March 2014

© Diodes Incorporated

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

= +25°C

Continuous Drain Current (Note 6) VGS = -10V

Steady

State

T

C

T

= +100°C

C

Maximum Body Diode Continuous Current
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Notes 7) L = 0.1mH

Avalanche Energy (Notes 7) L = 0.1mH

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

= +25°C

T

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

NEW PRODUCT

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

A

TA = +70°C

Steady state

t<10s 38

= +25°C

T

A

TA = +70°C

Steady state

t<10s 20
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-60 — — V
— — -1 µA
— — ±100 nA

ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

GS(th

R

DS (ON)

V

SD

-1.0 — -3.0 V
120 150

—

— -0.75 -1.2 V

150 185

DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance Ciss — 708 — pF
Output Capacitance Coss — 39 — pF
Reverse Transfer Capacitance Crss — 32 — pF
Gate Resistance Rg — 17 40 Ω
Total Gate Charge (VGS = -4.5V) Qg — 6.2 — nC
Total Gate Charge (VGS = -10V) Qg — 14 — nC
Gate-Source Charge Qgs — 2.8 — nC
Gate-Drain Charge Qgd — 3.1 — nC
Turn-On Delay Time tD(on) — 5.2 — ns
Turn-On Rise Time tr — 23 — ns
Turn-Off Delay Time tD(off) — 33 — ns
Turn-Off Fall Time tf — 39 — ns
Body Diode Reverse Recovery Time trr — 22 — ns
Body Diode Reverse Recovery Charge Qrr — 17 — nC

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. I

and E

AS

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

rating are based on low frequency and duty cycles to keep TJ = 25°C

AS

DMP6185SK3

V

DSS

V

GSS

I

D

I

S

I

DM

I

AS

E

AS

P

D

R

θJA

P

D

R

θJA

R

θJC

T

J, TSTG

mΩ

-60 V

±20 V

-3.6

-2.8

A

-2 A

-15 A

-16 A

13 mJ

1.6

1.0
75

2.8

1.8

W

°C/W

W

44

°C/W

6.2

-55 to +150 °C

VGS = 0V, ID = -250μA
VDS = -48V, VGS = 0V
VGS = ±20V, VDS = 0V

VDS = VGS, ID = -250μA
V

= -10V, ID = -12A

GS

V

= -4.5V, ID = -8A

GS

VGS = 0V, IS = -1A

V

= -30V, VGS = 0V,

DS

f = 1.0MHz

V

= 0V, VGS = 0V, f = 1MHz

DS

= -30V, ID = -12A

V

DS

= -30V, RL = 2.5Ω

V

DS

V

= -10V, RG = 3Ω

GS

I

= -12A, di/dt = 100A/μs

F

DMP6185SK3

Document Number DS36658 Rev. 1 - 2

2 of 6

www.diodes.com

March 2014

© Diodes Incorporated