Diodes DMP6185SE User Manual

Y

Y

Product Summary

V

R

(BR)DSS

-60V

DS(on)

150m @ V

185m @ VGS= -4.5V

= -10V

GS

T

Description

This MOSFET has been designed to minimize the on-state resistance

and yet maintain superior switching performance, making it ideal for

high efficiency power management applications.

Applications

• Motor Control

• Transformer Driving Switch

• DC-DC Converters

• Power Management Functions

ADVANCE INFORMATION

• Uninterrupted Power Supply

NEW PRODUCT

SOT223

Top View

I

D

= +25°C

A

-3A

-2.7A

Features and Benefits

• 100% Unclamped Inductive Switch (UIS) test in production

• Low on-resistance

• Fast switching speed

• Lead-Free Finish; RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT223

• Case Material: Molded Plastic, “Green” Molding Compound.

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See diagram below

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

• Weight: 0.112 grams (approximate)

Pin Out - Top View

DMP6185SE

60V P-CHANNEL ENHANCEMENT MODE MOSFET

UL Flammability Classification Rating 94V-0

Solderable per MIL-STD-202, Method 208

e3

D

G

S

Equivalent Circuit

Ordering Information (Note 4)

Part Number Qualification Case Packaging

DMP6185SE-13 Standard SOT223 2,500 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

WW

P6185

WW

P6185

DMP6185SE

Document Number DS36465 Rev. 4 - 2

= Manufacturer’s Marking
P6185 = Marking Code
YWW = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YWW = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y= Year (ex: 3 = 2013)
WW = Week (01 - 53)

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January 2014

© Diodes Incorporated

)

g

g

g

)

r

)

r

r

DMP6185SE

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source voltage

Gate-Source voltage

Continuous Drain current (Note 6) VGS = -10V

Maximum Body Diode Continuous Current

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Single Pulsed Avalanche Current (Note 7)

Single Pulsed Avalanche Energy (Note 7)

= +25°C

T

A

TA = +70°C

V

DSS

V

GS

I

D

I

S

I

DM

I

AS

E

AS

-60 V

±20

-3

-2.4

-2

-15

-16

13

V

A

A

A

A

mJ

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

ADVANCE INFORMATION

NEW PRODUCT

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

= +25°C

T

A

TA = +70°C

Steady state

t<10s 51

= +25°C

T

A

TA = +70°C

Steady state

t<10s 30

P

R

P

R

R

T

J, TSTG

JA

JA

JC

D

D

1.2

0.8

104

2.2

1.4

W

°C/W

W

60

°C/W

7.6

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-60

− −

− −

−

-1 µA

±100 nA

−

V

VGS = 0V, ID = -250A
VDS = -48V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

GS(th

R

DS (ON)

V

SD

−

-1

−
110 150
130 185

-0.75 -0.95 V

−

-3 V

VDS = VGS, ID = -250A
V

m

V
VGS = 0V, IS = -1A

= -10V, ID = -2.2A

GS

= -4.5V, ID = -1.8A

GS

DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = -4.5V) Qg
Total Gate Charge (VGS = -10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. UIS in production with L = 0.1mH, starting T

8. Short duration pulse test used to minimize self-heating effect.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

9. Guaranteed by design. Not subject to product testing.

= +25°C.

A

Q
Q

t

D(on

t

D(off

s

d

t

t

f

t

r

Q

r

−

−

−

−

−

−

−

−

−

−

−

−

−

−

708

39
32
17

6.2
14

2.8

3.1

5.2
23
33
39
22
17

−

−

−

28

−

−

−

−

−

−

−

−

−

−

pF
pF
pF



= -30V, VGS = 0V,

V

DS

f = 1MHz

VDS = 0V, VGS = 0V, f = 1MHz
nC
nC

V

= -30V, ID = -12A

nC

DS

nC
ns
ns
ns

= -30V, RL = 2.5

V

DS

V

= -10V, RG = 3

GS

ns
ns
nC

= -12A, di/dt = 100A/s

I

F

DMP6185SE

Document Number DS36465 Rev. 4 - 2

2 of 6

www.diodes.com

January 2014

© Diodes Incorporated