Diodes DMP6180SK3 User Manual

K

NEW PRODUCT

60V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

I

V

(BR)DSS

-60V

R

DS(on) max

110m @ V

140m @ VGS = -4.5V

= -10V

GS

D

TC = +25°C

-14A

-12A

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(ON)

Applications

 DC-DC Converters
 Power Management Functions
 Analog Switch

TO252

Top View

Features and Benefits

 Low On-Resistance
 Low Input Capacitance
 Totally Lead-Free & Fully RoHS compliant (Note 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: TO252 (DPAK)
 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections: See Diagram
 Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.33 grams (approximate)

D

D

GS

Top View

Internal Schematic

DMP6180SK3

e3

Ordering Information (Note 4)

Part Number Compliance Case Packaging

DMP6180SK3-13 Standard TO252 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMP6180SK3

Document number: DS36172 Rev. 3 - 2

P618S

YYWW

www.diodes.com

Logo
Part no.

Xth week: 01 ~ 53
Year: “11” = 2011

1 of 6

.

July 2013

© Diodes Incorporated



)

g

g

)

r

)

r

r

DMP6180SK3

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = -10V
Maximum Body Diode Forward Current (Note 6)

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Steady

State

T

= +25°C

C

= +100°C

T

C

V

DSS

V

GSS

I

D

I

S

I

DM

-60 V

±20 V

-14

-10

A

4.1 A
25 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

1.7

1.0
76

2.7

1.5
50

40
16

W

°C/W

W

°C/W

W

3.1 °C/W

-55 to +150 °C

NEW PRODUCT

T

= +25°C

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Total Power Dissipation (Note 6)

A

TA = +70°C

Steady state

t<10s 33

T

= +25°C

A

TA = +70°C

Steady state

t<10s 24

T

= +25°C

C

TC = +100°C
Thermal Resistance, Junction to Case (Note 6) Steady state
Operating and Storage Temperature Range

P

R

P

R

P

R

T

J, TSTG

D

JA



D

JA



D

JC

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-60

 
 

 

-1 µA

100 nA

V

VGS = 0V, ID = -250µA
VDS = -48V, VGS = 0V
VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

-1.2




| 




60 110
80 140
15

-2.7 V
m



S

-0.7 -1.0 V

VDS = VGS, ID = -250µA

= -10V, ID = -12A

V

GS

VGS = -4.5V, ID =-8A
V

= -5V, ID = -12A

DS

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C



iss

C



oss

C



rss

R



G

Total Gate Charge (VGS = -4.5V) Qg 
Total Gate Charge (VGS = -10V) Qg 
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.

7. Short duration pulse test used to minimize self-heating effect

8. Guaranteed by design. Not subject to production testing

Q



s

Q



d

t



D(on

t



t



D(off

t



f

t



r

Q



r

984.7
58

45.5

12.9

8.1

17.1

3.2

3.9

5.9

21.2

30.9

39.1

19.9

1.7























pF



nC

ns

ns

nC

= -30V, VGS = 0V, f = 1.0MHz

V

DS

VDS = 0V, VGS = 0V, f = 1.0MHz

= -30V, ID = -12A

V

DS

= -10V, VDS = -30V, R

V

GS

= 2.5

R

L

IS = -12A, dI/dt = 100A/s
IS = -12A, dI/dt = 100A/s

GEN

= 3,

DMP6180SK3

Document number: DS36172 Rev. 3 - 2

2 of 6

www.diodes.com

July 2013

© Diodes Incorporated