Diodes DMP58D0SV User Manual
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DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• ESD Protected Gate to 500V
• Low Input Capacitance
• Fast Switching Speed
• Lead Free By Design/RoHS Compliant (Note 3)
• “Green” Device (Note 4)
• Qualified to AEC-Q 101 Standards for High Reliability
ESD protected to 500V
SOT-563
TOP VIEW
DMP58D0SV
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
S
G
D
2
S
2
TOP VIEW
Internal Schematic
1
1
G
D
1
2
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage
Drain-Gate Voltage (Note 1)
Gate-Source Voltage Continuous
Drain Current (Note 2) Continuous
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage Temperature Range
Electrical Characteristics @T
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 1. RGS ≤ 20KΩ.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
4. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
DMP58D0SV
Document number: DS31293 Rev. 4 - 2
V
V
V
P
R
T
, T
J
= 25°C unless otherwise specified
BV
DSS
I
⎯ ⎯
DSS
I
⎯ ⎯
GSS
V
GS(th
R
⎯
DS (ON
g
FS
C
⎯
iss
C
⎯
oss
C
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DSS
DGR
GSS
I
D
D
JA
STG
-50
-0.8
0.05
⎯
⎯ ⎯
⎯
6 8
⎯ ⎯
27
4
1.4
-50 V
-50 V
20
-160 mA
400 mW
313
-55 to +150
V
VGS = 0V, ID = -250μA
-1
μA
±5 μA
-2.1 V
= -50V, VGS = 0V
V
DS
VGS = ±20V, V
VDS = VGS, ID = -250μA
Ω VGS = -5V, ID = -0.100A
S
V
= -25V, ID = -0.1A
DS
pF
⎯
⎯
⎯
pF
pF
V
DS
= -25V, V
°C/W
= 0V
DS
= 0V, f = 1.0MHz
GS
© Diodes Incorporated
V
°C
July 2009
RAIN CUR
R
N
T
R
CUR
R
T
R
R
OUR
CE ON-R
TANC
R
R
OUR
CE ON-R
TANC
C
C
PAC
T
N
C
F
DMP58D0SV
(A)
E
D
-I , D
0.50
0.40
0.30
0.20
V = -10V
GS
V = -4.5V
GS
(A)
EN
AIN
D
-I , D
0.4
0.3
0.2
0.1
V = -5V
GS
T = 25°C
A
T = -55°C
A
T = 150°C
A
T = 85°C
A
0.10
V = -2.5V
V = -1.8V
0.00
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-V , DRAIN-SOURCE VOLTAGE (V)
DS
GS
Fig. 1 Typical Output Characteristics
10
Ω
E ( )
GS
0
1 1.5 2 2.5 3 3.5 4 4.5
-V , GATE SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
100
Ω
E ( )
V= -5V
ESIS
GS
V = -10V
GS
ESIS
T = 150°C
T = 125°C
A
A
10
T = 85°C
A
T = 25°C
A
AIN-S
, D
DS(ON)
1
0.001 0.01
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Volt age
2.0
1.8
1.6
1.4
1.2
0.1 1
-I , DRAIN CURRENT (A)
D
V = -10V
GS
I = -250mA
D
V = -5V
GS
I = -100mA
D
AIN-S
T = -55°C
A
, D
DS(ON)
1
0 0.05 0.1 0.15 0.2 0.25 0.3
-I , DRAIN CURRENT (A)
D
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Tem peratu r e
30
C
iss
25
)
20
E (p
A
15
I
f = 1MHz
V = 0V
GS
A
10
1.0
DS(ON)
R , DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
0.8
0.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Fig. 5 On-Resistance Variation with Temperature
,
C
5
0
0 5 10 15 20 25 30 35 40
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 6 Typical Capacitance
oss
C
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DMP58D0SV
Document number: DS31293 Rev. 4 - 2
2 of 5
www.diodes.com
July 2009
© Diodes Incorporated
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