Diodes DMP58D0LFB User Manual

n

Product Summary

I

D

TA = +25°C

V

(BR)DSS

-50V

R

8 @ V

DS(ON)

GS

= -5V

Package

X1-DFN1006-3 -310A

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(on)

Applications

• DC-DC Converters

• Power management functions

• Battery Operated Systems and Solid-State Relays

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc.

X1-DFN1006-3

ESD PROTECTED

Bottom View

DMP58D0LFB

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected 1kV

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X1-DFN1006-3

• Case Material: Molded Plastic, "Green" Molding Compound.

• UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Weight: 0.001 grams (approximate)

Drai

S

D

G

Top View

Pin-Out

Gate

Gate
Protection
Diode

Equivalent Circuit

Source

Ordering Information (Note 4)

Part Number Case Packaging

DMP58D0LFB-7 X1-DFN1006-3 3,000 / Tape & Reel

DMP58D0LFB-7B X1-DFN1006-3 10,000 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMP58D0LFB-7 DMP58D0LFB-7B

NZ

NZ

NZ = Product Type Marking Code

Top View

Dot Denotes Drain Side

Top View

Bar Denotes Gate

and Source Side

DMP58D0LFB

Document number: DS35206 Rev. 6 - 2

1 of 6

www.diodes.com

September 2012

© Diodes Incorporated

)

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

T

Continuous Drain Current (Note 4) VGS = -5V

Continuous Drain Current (Note 5) VGS = -5V

Steady

State

Steady

State

= +25°C

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

Pulsed Drain Current (Note 6)

Thermal Characteristics

Characteristic Symbol Max Unit

Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 4) R
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R
Operating and Storage Temperature Range

T

DMP58D0LFB

V

DSS

V

GSS

I

D

I

D

I

DM

P

D

JA

P

D

JA

, T

J

STG

-50 V
±20 V

-180

-150

-310

-250

mA

mA

-500 mA

0.47 W
258 °C/W

1.22 W
105 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV

I

DSS
DSS
GSS

-50 — — V
— — -1.0 µA
— — ±5 µA

VGS = 0V, ID = -250A
VDS = -50V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

V

GS(th

R

DS (ON)

|Y

fs

-0.8 — -2.1 V
— 6 8 
— 12 18 

0.05 — — S

|

VDS = VGS, ID = -250A

= -5V, ID = -100mA

V

GS

V

= -2.5V, ID = -10mA

GS

VDS = -25V, ID = -100mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMP58D0LFB

Document number: DS35206 Rev. 6 - 2

C

iss

C

oss

C

rss

t

D(on

t

t

D(off

t

f

www.diodes.com

— 27 —
— 4.0 —
— 1.4 —
— 30.7 —
— 84.1 —
— 201.8 —
— 32.2 —

2 of 6

pF

ns

= -25V, VGS = 0V,

V

DS

f = 1.0MHz

= -4.5V, VDS = -30V,

V

GS

= 50, ID = -10mA

R

G

September 2012

© Diodes Incorporated

RAIN C

URREN

T

RAIN CUR

REN

T

R

R

OUR

CE ON-R

TANC

2

R

R

OUR

CE ON-R

TANC

7

R

R

OUR

CE ON-R

TANC

0.3

V = 10V

GS

V = 4.0V

(A)

0.25

V = 5.0V

GS

V = 4.5V

GS

GS

0.2

0.15

0.1

D

I, D

0.05

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristics

V = 2.0V

GS

V = 2.5V

1

Ω

E ( )

10

V = 2.5V

GS

V = 3.0V

GS

GS

V = 1.8V

GS

0.3

V = 5V

GS

(A)

0.25

0.2

T = 25°C

T = -55°C

A

A

0.15

0.1

D

I, D

0.05

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , GATE SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

16

Ω

E ( )

14

12

ESIS

8

V = 4.5V

GS

6

ESIS

10

8

DMP58D0LFB

T = 85°C

A

T = 125°C

T = 150°C

T = 125°C

A

T = 85°C

T = 150°C

A

A

A

A

4

AIN-S
, D

2

DS(ON)

0

0 0.05 0.1 0.15 0.2 0.25 0.3

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

vs. Drain C urrent an d G at e Voltage

1.

V = 10V

GS

I = 300mA

1.5

D

1.3

1.1

(NORMALIZED)

0.9

V = 10V

GS

V = 5V

GS

I = 150mA

D

T = 25°C

AIN-S

4

A

, D

2

DS(ON)

0

0 0.05 0.1 0.15 0.2 0.25 0.3

I , DRAIN CURRENT (A)

D

T = -55°C

Fig. 4 On- R esi s tance

vs. Drain C urrent an d Tempera tu r e

12

Ω

V=5V,

E ( )

10

8

ESIS

6

GS

I =150mA

D

V =10V,

GS

I =300mA

D

4

A

AIN-S

2

6

0.7

DS(ON)

R , DRAIN-SOURCE ON RESISTANCE

0.5

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

Fig. 5 On-Resistance Variation with Temperature

DMP58D0LFB

Document number: DS35206 Rev. 6 - 2

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, D

DS(ON)

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

Fig. 6 On- R esi s tance vs. Temperature

September 2012

© Diodes Incorporated

GAT

THR

H

O

O

T

G

5

OUR

CE CUR

RENT

C, CAPACITANC

R

C

U

R

R

T

2.

E (V)

2

A
L

1.5

LD V

I = 1mA

D

(A)

0.3

0.25

0.2

T = 25°C

A

DMP58D0LFB

0.15

ES

I = 250µA

1

E

0.5

GS(TH)

V,

0

-50 -25 0 25 50 75 100 125
T , AMBIENT TEMPERATURE (°C)

A

Fig. 7 Gat e Threshold V ariation vs. Ambient Temperature

100

T = 150°C

A

D

0.1

S

I, S

0.05

0

150

0.4 0.6 0.8 1 1.2
V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

35

30

f = 1MHz

C

ISS

25

E (pF)

10

T = 125°C

A

T = 85°C

A

20

15

T = 25°C

A

DSS

-I , LEAKAGE CURRENT (nA)

1

0 5 10 15 20 25 30

V , DRAIN-SOURC E VOLTAGE (V)

DS

Fig. 9 Typical Drain-Source Leakage Current vs. Voltage

0.1

(A)
EN

AIN

0.01

D

I, D

0.001

1

R

DS(ON)

Limited

T = 150 C

J(MAX)

T= 25C

A

Single Pulse

-I (A) @ DC

D

-I (A) @P =10s

DW

°

°

-I (A) @P =100µs

DW

-I (A) @P =1s

DW

-I (A) @P =100ms

DW

-I (A) @P =10ms

DW

-I (A) @P =1ms

DW

-I (A) @

D

P =10µs

W

T

10

C

5

C

0

V , DRAIN-SOURC E VOLTAGE (V)

DS

OSS

RSS

-20-16-12-8-40

Fig. 10 Typical Junction Capacitance

0.1 1 10 100

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 11 SOA, Safe Operation Area

DMP58D0LFB

Document number: DS35206 Rev. 6 - 2

4 of 6

www.diodes.com

September 2012

© Diodes Incorporated

1

0.1

0.01

r(t), TRANSIENT THERMAL RESISTANCE

0.001

0.000001 0.0001 0.001 0.01 0.1 1 10 100 1,000

0.00001
t1, PULSE DURATION TIMES (sec)
Fig. 12 Transient Thermal Resi st ance

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

A

A1

D

b1

b2

E

L2

L1L3

e

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

X

1

G2

X

C

Dimensions Value (in mm)

Z 1.1
G1 0.3
G2 0.2

X 0.7
X1 0.25

G1

Y

Z

Y 0.4

C 0.7

R(t)=r(t) * R

θθ

JA JA

R = 54°C/W

θ

JA

Duty Cycle, D = t1/ t2

X1-DFN1006-3

Dim Min Max Typ

A 0.47 0.53 0.50

A1 0 0.05 0.03

b1 0.10 0.20 0.15
b2 0.45 0.55 0.50

D 0.95 1.075 1.00
E 0.55 0.675 0.60
e

⎯ ⎯

0.35

L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3

⎯ ⎯

0.40

All Dimensions in mm

DMP58D0LFB

DMP58D0LFB

Document number: DS35206 Rev. 6 - 2

5 of 6

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September 2012

© Diodes Incorporated

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
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Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2012, Diodes Incorporated

www.diodes.com

DMP58D0LFB

DMP58D0LFB

Document number: DS35206 Rev. 6 - 2

6 of 6

www.diodes.com

September 2012

© Diodes Incorporated