Diodes DMP58D0LFB User Manual

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Product Summary

I

D

TA = +25°C

V

(BR)DSS

-50V

R

8 @ V

DS(ON)

GS

= -5V

Package

X1-DFN1006-3 -310A

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(on)

Applications

• DC-DC Converters

• Power management functions

• Battery Operated Systems and Solid-State Relays

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc.

X1-DFN1006-3

ESD PROTECTED

Bottom View

DMP58D0LFB

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected 1kV

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X1-DFN1006-3

• Case Material: Molded Plastic, "Green" Molding Compound.

• UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Weight: 0.001 grams (approximate)

Drai

S

D

G

Top View

Pin-Out

Gate

Gate
Protection
Diode

Equivalent Circuit

Source

Ordering Information (Note 4)

Part Number Case Packaging

DMP58D0LFB-7 X1-DFN1006-3 3,000 / Tape & Reel

DMP58D0LFB-7B X1-DFN1006-3 10,000 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMP58D0LFB-7 DMP58D0LFB-7B

NZ

NZ

NZ = Product Type Marking Code

Top View

Dot Denotes Drain Side

Top View

Bar Denotes Gate

and Source Side

DMP58D0LFB

Document number: DS35206 Rev. 6 - 2

1 of 6

www.diodes.com

September 2012

© Diodes Incorporated

)

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

T

Continuous Drain Current (Note 4) VGS = -5V

Continuous Drain Current (Note 5) VGS = -5V

Steady

State

Steady

State

= +25°C

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

Pulsed Drain Current (Note 6)

Thermal Characteristics

Characteristic Symbol Max Unit

Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 4) R
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R
Operating and Storage Temperature Range

T

DMP58D0LFB

V

DSS

V

GSS

I

D

I

D

I

DM

P

D

JA

P

D

JA

, T

J

STG

-50 V
±20 V

-180

-150

-310

-250

mA

mA

-500 mA

0.47 W
258 °C/W

1.22 W
105 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV

I

DSS
DSS
GSS

-50 — — V
— — -1.0 µA
— — ±5 µA

VGS = 0V, ID = -250A
VDS = -50V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

V

GS(th

R

DS (ON)

|Y

fs

-0.8 — -2.1 V
— 6 8 
— 12 18 

0.05 — — S

|

VDS = VGS, ID = -250A

= -5V, ID = -100mA

V

GS

V

= -2.5V, ID = -10mA

GS

VDS = -25V, ID = -100mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMP58D0LFB

Document number: DS35206 Rev. 6 - 2

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— 4.0 —
— 1.4 —
— 30.7 —
— 84.1 —
— 201.8 —
— 32.2 —

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pF

ns

= -25V, VGS = 0V,

V

DS

f = 1.0MHz

= -4.5V, VDS = -30V,

V

GS

= 50, ID = -10mA

R

G

September 2012

© Diodes Incorporated