Diodes DMP56D0UV User Manual

D

Product Summary

I

V

(BR)DSS

-50V

R

6Ω @ V

DS(ON)

GS

= -4 V

8Ω @ VGS = -2.5V

D

TA = +25°C

-160mA

-120mA

Descriptions

This new generation MOSFET has been designed to minimize the

on-state resistance (R

) and yet maintain superior switching

DS(on)

performance, making it ideal for high efficiency power management

applications.

Applications

 DC-DC Converters
 Power Management Functions
 Battery Operated Systems and Solid-State Relays

ESD PROTECTE

TOP VIEW



Green

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low On-Resistance
 ESD Protected Gate
 Low Input Capacitance
 Fast Switching Speed
 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT563
 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020D
 Terminals: Finish  Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

 Weight: 0.006 grams (approximate)

SOT563

D

2

S

2

TOP VIEW

Internal Schematic

1

1

G

D

1

2

S

G

DMP56D0UV

e3

Ordering Information (Note 4)

Part Number Case Packaging

DMP56D0UV -7 SOT563 3000/Tape & Reel

DMP56D0UV -13 SOT563 10000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMP56D0UV

Document number: DS36174 Rev. 2 - 2

KD3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)

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© Diodes Incorporated



)

g

g

)

r

)

DMP56D0UV

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage Continuous
Drain Current (Note 5) Continuous

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

V

DSS

V

GSS

I

D

I

DM

-50 V

8

V

-160 mA

-700 mA

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range

P

D

R

JA

T

, T

J

STG

400 mW
313

-55 to +150

C/W

C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage

BV

I

DSS

I

GSS

-50

DSS

 
 

 

-10 µA

1

V

VGS = 0V, ID = -250µA
V

= -50V, VGS = 0V

DS

µA

VGS = 8V, V

DS

= 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

Y

V

-0.5




100



fs

 

SD

-1.2 V



4.6

6.0 6 8

 

-1.2 V

VDS = VGS, ID = -250µA

= -4V, ID = -100mA

V

GS

Ω

V

= -2.5V, ID = -80mA

GS

mS

V

= -5V, ID = -100mA

DS

VGS = 0V, IS = -100mA

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R

G









Total Gate Charge VGS = 4.5V Qg 
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

DMP56D0UV

Document number: DS36174 Rev. 2 - 2

Q



s

Q



d

t



D(on

t



t



D(off

t



f

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50.54

3.49

2.42
201

0.58

0.09

0.14

4.46

6.63

21.9

15.0













pF
pF

V

DS

= -25V, V

= 0V, f = 1.0MHz

GS

pF

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC
nC

= -4V, VDS = -25V,

V

GS

I

= -100mA

D

nS
nS
nS

V

R

DD

GEN

= -30V, I

= 6Ω

= -0.27A,

D

nS

= -4V

VGEN

© Diodes Incorporated

,

June 2013