D
Product Summary
I
V
(BR)DSS
-50V
R
6Ω @ V
DS(ON)
GS
= -4 V
8Ω @ VGS = -2.5V
D
TA = +25°C
-160mA
-120mA
Descriptions
This new generation MOSFET has been designed to minimize the
on-state resistance (R
) and yet maintain superior switching
DS(on)
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
ESD PROTECTE
TOP VIEW
Green
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
ESD Protected Gate
Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT563
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
SOT563
D
2
S
2
TOP VIEW
Internal Schematic
1
1
G
D
1
2
S
G
DMP56D0UV
e3
Ordering Information (Note 4)
Part Number Case Packaging
DMP56D0UV -7 SOT563 3000/Tape & Reel
DMP56D0UV -13 SOT563 10000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMP56D0UV
Document number: DS36174 Rev. 2 - 2
KD3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
1 of 5
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June 2013
© Diodes Incorporated
)
g
g
)
r
)
DMP56D0UV
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage Continuous
Drain Current (Note 5) Continuous
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
V
DSS
V
GSS
I
D
I
DM
-50 V
8
V
-160 mA
-700 mA
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
P
D
R
JA
T
, T
J
STG
400 mW
313
-55 to +150
C/W
C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV
I
DSS
I
GSS
-50
DSS
-10 µA
1
V
VGS = 0V, ID = -250µA
V
= -50V, VGS = 0V
DS
µA
VGS = 8V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
Y
V
-0.5
100
fs
SD
-1.2 V
4.6
6.0 6 8
-1.2 V
VDS = VGS, ID = -250µA
= -4V, ID = -100mA
V
GS
Ω
V
= -2.5V, ID = -80mA
GS
mS
V
= -5V, ID = -100mA
DS
VGS = 0V, IS = -100mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
iss
C
oss
C
rss
R
G
Total Gate Charge VGS = 4.5V Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMP56D0UV
Document number: DS36174 Rev. 2 - 2
Q
s
Q
d
t
D(on
t
t
D(off
t
f
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50.54
3.49
2.42
201
0.58
0.09
0.14
4.46
6.63
21.9
15.0
pF
pF
V
DS
= -25V, V
= 0V, f = 1.0MHz
GS
pF
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC
nC
= -4V, VDS = -25V,
V
GS
I
= -100mA
D
nS
nS
nS
V
R
DD
GEN
= -30V, I
= 6Ω
= -0.27A,
D
nS
= -4V
VGEN
© Diodes Incorporated
,
June 2013
RAIN CUR
R
N
T
R
CUR
RENT
R
R
OUR
ON-R
O
O
R
R
OUR
CE ON-R
T
C
R, D
R
N-SOUR
C
O
N-R
N
C
DMP56D0UV
(A)
0.4
0.3
0.2
V = -5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
0.8
V = 4.5V
GS
V = 8.0V
GS
0.6
(A)
V = 4.0V
E
GS
0.4
V = 2.5V
GS
V = 1.8V
GS
AIN
D
-I , D
0.2
0.0
0 0.5 1 1.5 2 2.5 3 3.5
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1 Typical Output Characteristics
8
7
V = 1.5V
GS
V = 1.2V
GS
44.5 5
-I , D
D
0.1
10
9
8
0
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
V = -4V
GS
T = 150°C
A
ESISTANCE ( )
CE
6
5
V = -2.5V
GS
4
V = -4.5V
AIN-S
, D
DS(ON)
3
2
GS
0 0.1 0.2 0.3 0.4 0.5 0.6
-I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistnace vs.
Drain Current and Gate Voltage
1.8
E
AN
1.6
V = -4V
GS
I = -100mA
D
V = -4.0V
GS
V = -8.0V
GS
7
N-RESISTANCE ( )
6
5
URCE
4
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
3
2
1
DS(ON)
R , DRAIN-S
0
0 0.1 0.2 0.3 0.4 0.5 0.6
-I , DRAIN CURRENT (A)
D
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
10
9
E ( )
8
1.4
ESIS
1.2
1
0.8
(NORMALIZED)
AIN-S
0.6
, D
0.4
DS(ON)
0.2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Figure 5 On-Resistance Variation with Temperature
V = -2.5V
GS
I = -100mA
D
7
ESISTA
6
E
5
4
3
AI
2
1
DS(ON)
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Figure 6 On-Resistance Variation with Temperature
V = -2.5V,
GS
I = -100mA
D
V = -4V,
GS
I = -100mA
D
DMP56D0UV
Document number: DS36174 Rev. 2 - 2
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June 2013
© Diodes Incorporated
GATE THR
H
O
O
T
G
O
URCE CUR
RENT
C
UNC
TIO
N CAPACITAN
C
P
F
1.5
E (V)
A
L
1
LD V
ES
I = -250µA
D
I = -1mA
D
0.5
GS(TH)
V,
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Figure 7 Gate Threshold Variation vs. Ambient Temperature
100
)
DMP56D0UV
1
T = 150°C
A
0.8
(A)
0.6
0.4
S
0.2
-I , S
0
0 0.3 0.6 0.9 1.2 1.5
-V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
8
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
E (
, J
10
T
GS
6
V = -25V
DS
I = -100mA
D
4
2
-V , GATE THRESHOLD VOLTAGE (V)
1
0 5 10 15 20 25 30 35 40
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
0
0 0.2 0.4 0.6 0.8 1 1.2
Q , TOTAL GATE CHARGE (nC)
g
Figure 10 Gate Charge Characteristics
Package Outline Dimensions
DMP56D0UV
Document number: DS36174 Rev. 2 - 2
K
A
SOT563
Dim Min Max Typ
B
C
A 0.15 0.30 0.20
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D - - 0.50
D
G
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.55 0.60 0.60
L 0.10 0.30 0.20
M
H
L
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M 0.10 0.18 0.11
All Dimensions in mm
June 2013
© Diodes Incorporated
DMP56D0UV
Suggested Pad Layout
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
G
Z
Y
X
C2
C2
C1
IMPORTANT NOTICE
LIFE SUPPORT
Dimensions Value (in mm)
Z 2.2
G 1.2
X 0.375
Y 0.5
C 1.7
E 0.5
DMP56D0UV
Document number: DS36174 Rev. 2 - 2
5 of 5
www.diodes.com
June 2013
© Diodes Incorporated
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