Page 1
n
Product Summary
I
V
R
(BR)DSS
-50V
6 @ V
8 @ VGS = -2.5V
DS(ON)
GS
= -4 V
D
TA = +25°C
-200mA
-160mA
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(on)
Applications
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
X-DFN1006-3
ESD PROTECTED
Bottom View
Green
Features and Benefits
Low On-Resistance
ESD Protected Gate
Low Input/Output Leakage
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X1-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound.
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper leadframe.
Terminal Connections: See Diagram
Weight: 0.001 grams (approximate)
D
Top View
Internal Schematic
DMP56D0UFB
P-CHANNEL ENHANCEMENT MODE MOSFET
UL Flammability Classification Rating 94V-0
Body
Diode
e4
Solderable per MIL-STD-202, Method 208
Drai
Gate
S
Gate
G
Protection
Diode
Equivalent Circuit
Source
Ordering Information (Note 4)
Part Number
DMP56D0UFB-7 X1-DFN1006-3
DMP56D0UFB-7B X1-DFN1006-3 10000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Case Packaging
3000/Tape & Reel
Marking Information
DMP56D0UFB
Document number: DS36175 Rev. 2 - 2
DMP56D0UFB-7 DMP56D0UFB-7B
D3 D3
Top View
Dot Denotes
Drain Side
Top View
Bar Denotes Gate
and Source Side
1 of 5
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D3 = Product Type Marking Code
June 2013
© Diodes Incorporated
Page 2
)
g
g
)
r
)
DMP56D0UFB
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5) Steady
Pulsed Drain Current (Note 6)
T
= +25°C ID
A
V
DSS
V
GSS
I
DM
-50 V
±8 V
-200 mA
-700 mA
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R
Operating and Storage Temperature Range
P
T
J,TSTG
JA
D
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
-50 — — V
— — -10 µA
— — ±1 µA
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
V
GS(th
R
DS (ON)
|Y
V
SD
|
fs
-0.5 — -1.2 V
——
4.6
6
100 — — mS
— — -1.2 V
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
iss
C
oss
C
rss
R
G
Total Gate Charge VGS = 4.5V Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PCB. t 5 sec.
6. Pulse width 10µS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Q
Q
t
D(on
t
D(off
s
d
t
t
f
— 50.54 — pF
— 3.49 — pF
— 2.42 — pF
— 201 —
— 0.58 — nC
— 0.09 — nC
— 0.14 — nC
— 4.46 — nS
— 6.63 — nS
— 21.9 — nS
— 15.0 — nS
DMP56D0UFB
Document number: DS36175 Rev. 2 - 2
2 of 5
www.diodes.com
425 mW
275 °C/W
-55 to +150 °C
V
= 0V, ID = -250µA
GS
VDS = -50V, VGS = 0V
VGS = ±8V, VDS = 0V
V
= VGS, ID = -250µA
DS
= -4.0V, ID = -100mA
6
8
V
GS
= -2.5V, ID = -80mA
V
GS
VDS = -5V, ID = -100mA
V
= 0V, IS = -100mA
GS
= -25V, V
V
DS
GS
= 0V,
f = 1.0MHz
= 0V, VGS = 0V,
V
DS
f = 1.0MHz
= -4V, VDS = -25V,
V
GS
= -100mA
I
D
V
= -30V, ID = -0.27A,
DD
V
GEN
= -4V, R
= 6
GEN
June 2013
© Diodes Incorporated
Page 3
R
C
URRENT
RAIN CUR
R
N
T
O
O
R
R
OUR
ON-R
R
R
OUR
CE ON-R
T
C
R
R
N-SOUR
C
O
N-R
T
N
C
DMP56D0UFB
(A)
0.8
0.6
0.4
V = 8.0V
GS
V = 4.5V
GS
V = 4.0V
GS
V = 2.5V
GS
V = 1.8V
GS
(A)
E
0.4
0.3
0.2
V = -5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
AIN
D
-I , D
0.2
0.0
0 0.5 1 1.5 2 2.5 3 3.5
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1 Typical Output Characteristics
8
7
V = 1.5V
GS
V = 1.2V
GS
44.5 5
-I , D
D
0.1
10
9
8
0
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
V = -4V
GS
T = 150°C
A
7
6
V = -2.5V
N-RESISTANCE ( )
GS
5
URCE
4
V = -4.5V
GS
V = -8.0V
3
DS(ON)
R , DRAIN-S
2
0 0.1 0.2 0.3 0.4 0.5 0.6
-I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistnace vs.
Drain Current and Gate Voltage
1.8
E
AN
ESIS
1.6
1.4
V = -4V
GS
I = -100mA
D
1.2
1
0.8
(NORMALIZED)
AIN-S
0.6
, D
0.4
DS(ON)
0.2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Figure 5 On-Resistance Variation with Temperature
V = -4.0V
GS
GS
V = -2.5V
GS
I = -100mA
D
ESISTANCE ( )
CE
AIN-S
, D
6
5
4
3
2
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
1
DS(ON)
0
0 0.1 0.2 0.3 0.4 0.5 0.6
-I , DRAIN CURRENT (A)
D
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
10
9
E ( )
8
A
7
ESIS
V = -2.5V,
GS
I = -100mA
D
6
E
5
V = -4V,
4
GS
I = -100mA
D
3
AI
2
, D
1
DS(ON)
0
-50-25 0255075100125150
T , JUNCTION TEMPERATURE (°C)
J
Figure 6 On-Resistance Variation with Temperature
DMP56D0UFB
Document number: DS36175 Rev. 2 - 2
3 of 5
www.diodes.com
June 2013
© Diodes Incorporated
Page 4
G
H
RESH
O
O
G
OUR
CE CUR
RENT
C
UNC
TIO
N CAPACITAN
C
P
F
1.5
E (V)
LTA
1
LD V
I = -250µA
D
I = -1mA
D
0.5
ATE T
GS(TH)
V,
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Figure 7 Gate Threshol d Variation vs. Ambient Temperature
100
)
DMP56D0UFB
1
T = 150°C
A
0.8
(A)
0.6
0.4
S
0.2
-I , S
0
0 0.3 0.6 0.9 1.2 1.5
-V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
8
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
E (
, J
10
T
GS
6
V = -25V
DS
I = -100mA
D
4
2
-V , GATE THRESHOLD VOLTAGE (V)
1
0 5 10 15 20 25 30 35 40
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
0
0 0.2 0.4 0.6 0.8 1 1.2
Q , TOTAL GATE CHARGE (nC)
g
Figure 10 Gate Charge Characteristics
Package Outline Dimensions
DMP56D0UFB
Document number: DS36175 Rev. 2 - 2
A
A1
D
b1
b2
E
L2
L1L3
e
4 of 5
www.diodes.com
X1-DFN1006-3
Dim Min Max Typ
A 0.47 0.53 0.50
A1 0 0.05 0.03
b1 0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.075 1.00
E 0.55 0.675 0.60
e
0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3
0.40
All Dimensions in mm
June 2013
© Diodes Incorporated
Page 5
DMP56D0UFB
Suggested Pad Layout
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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website, harmless against all damages.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
X
1
G2
X
C
Dimensions Value (in mm)
Z 1.1
G1 0.3
G2 0.2
X 0.7
G1
Y
Z
IMPORTANT NOTICE
LIFE SUPPORT
X1 0.25
Y 0.4
C 0.7
DMP56D0UFB
Document number: DS36175 Rev. 2 - 2
5 of 5
www.diodes.com
June 2013
© Diodes Incorporated
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