Diodes DMP56D0UFB User Manual

n

Product Summary

I

V

R

(BR)DSS

-50V

6 @ V

8 @ VGS = -2.5V

DS(ON)

GS

= -4 V

D

TA = +25°C

-200mA

-160mA

Description

This new generation MOSFET has been designed to minimize the

on-state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(on)

Applications

 DC-DC Converters

 Power Management Functions

 Battery Operated Systems and Solid-State Relays

X-DFN1006-3

ESD PROTECTED

Bottom View



Green

Features and Benefits

 Low On-Resistance

 ESD Protected Gate

 Low Input/Output Leakage

 Fast Switching Speed
 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: X1-DFN1006-3

 Case Material: Molded Plastic, “Green” Molding Compound.

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish  NiPdAu over Copper leadframe.

 Terminal Connections: See Diagram

 Weight: 0.001 grams (approximate)

D

Top View

Internal Schematic

DMP56D0UFB

P-CHANNEL ENHANCEMENT MODE MOSFET

UL Flammability Classification Rating 94V-0

Body
Diode

e4

Solderable per MIL-STD-202, Method 208

Drai

Gate

S

Gate

G

Protection
Diode

Equivalent Circuit

Source

Ordering Information (Note 4)

Part Number

DMP56D0UFB-7 X1-DFN1006-3

DMP56D0UFB-7B X1-DFN1006-3 10000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Case Packaging

3000/Tape & Reel

Marking Information

DMP56D0UFB

Document number: DS36175 Rev. 2 - 2

DMP56D0UFB-7 DMP56D0UFB-7B

D3 D3

Top View

Dot Denotes

Drain Side

Top View

Bar Denotes Gate

and Source Side

1 of 5

www.diodes.com

D3 = Product Type Marking Code

June 2013

© Diodes Incorporated

)

g

g

)

r

)

DMP56D0UFB

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5) Steady
Pulsed Drain Current (Note 6)

T

= +25°C ID

A

V

DSS

V

GSS

I

DM

-50 V
±8 V

-200 mA

-700 mA

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R
Operating and Storage Temperature Range

P

T

J,TSTG

JA

D

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-50 — — V
— — -10 µA
— — ±1 µA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 7)

V

GS(th

R

DS (ON)

|Y
V

SD

|

fs

-0.5 — -1.2 V

——

4.6
6

100 — — mS

— — -1.2 V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Gate Resistance

C

iss

C

oss

C

rss

R

G

Total Gate Charge VGS = 4.5V Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB. t 5 sec.

6. Pulse width 10µS, Duty Cycle 1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

Q
Q

t

D(on

t

D(off

s

d

t

t

f

— 50.54 — pF
— 3.49 — pF
— 2.42 — pF

— 201 — 

— 0.58 — nC
— 0.09 — nC
— 0.14 — nC
— 4.46 — nS
— 6.63 — nS
— 21.9 — nS
— 15.0 — nS

DMP56D0UFB

Document number: DS36175 Rev. 2 - 2

2 of 5

www.diodes.com

425 mW
275 °C/W

-55 to +150 °C

V

= 0V, ID = -250µA

GS

VDS = -50V, VGS = 0V
VGS = ±8V, VDS = 0V

V

= VGS, ID = -250µA

DS

= -4.0V, ID = -100mA

6
8



V

GS

= -2.5V, ID = -80mA

V

GS

VDS = -5V, ID = -100mA
V

= 0V, IS = -100mA

GS

= -25V, V

V

DS

GS

= 0V,

f = 1.0MHz

= 0V, VGS = 0V,

V

DS

f = 1.0MHz

= -4V, VDS = -25V,

V

GS

= -100mA

I

D

V

= -30V, ID = -0.27A,

DD

V

GEN

= -4V, R

= 6

GEN

June 2013

© Diodes Incorporated