Diodes DMP4051LK3 User Manual

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f

D

Product Summary

I

V

R

(BR)DSS

-40V

DS(on)

51mΩ @ V

85mΩ @ VGS = -4.5V

= -10V

GS

T

= 25°C

A

-10.5A

-8.4A

D

Description and Applications

This MOSFET has been designed to minimize the on-state resistance
(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

• Backlighting

• DC-DC Converters

• Power management functions

TO252

GS

Top View



Green

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Top View

Pin-Out

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Diodes Incorporated

DMP4051LK3

40V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• 100% Unclamped Inductive Switch (UIS) test in production

• Low on-resistance

• Fast switching speed

• “Green” component and RoHS compliant (Note 1)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TO252

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0 (Note 1)

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.33 grams (approximate)

D

G

S

Equivalent Circuit

Ordering Information (Notes 1 & 2)

Product Grade Marking Reel size (inches) Tape width (mm) Quantity per reel

DMP4051LK3-13 Commercial P4051L 13 16 2,500

DMP4051LK3Q-13 Automotive P4051L 13 16 2,500

Notes: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about

Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.

2. Products with Q-suffix are automotive grade. Automotive products are electrical and thermal the same as the commercial, except where specified.

Marking Information

YYWW

P4051L

DMP4051LK3

Document Number DS32114 Rev. 3 - 2

www.diodes.com

= Manufacturer’s Marking
P4051L = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)

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February 2012

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Maximum Ratings @T

= 25°C unless otherwise specified

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Characteristic Symbol Value Unit

Drain-Source voltage
Gate-Source voltage (Note 3)
Single Pulsed Avalanche Energy (Note 9)
Single Pulsed Avalanche Current (Note 9)

(Note 5)

Continuous Drain current

V

= 10V

GS

TA = 70°C (Note 5)
(Note 4) -7.2

Pulsed Drain current

V

= 10V

GS

(Note 6)
Continuous Source current (Body diode) (Note 5)
Pulsed Source current (Body diode) (Note 5)

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

(Note 4)

Power dissipation
Linear derating factor

(Note 5)
(Note 7)

(Note 4)

Thermal Resistance, Junction to Ambient

(Note 5) 14.0

(Note 7) 58.4
Thermal Resistance, Junction to Lead (Note 8)
Operating and storage temperature range

Notes: 3. AEC-Q101 VGS maximum is ±16V.

4. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.

5. Same as note 4, except the device is measured at t ≤ 10 sec.

6. Same as note 4, except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.

7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.

8. Thermal resistance from junction to solder-point (at the end of the drain lead).

9. UIS in production with L = 100µH, V

= -40V.

DD

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Diodes Incorporated

DMP4051LK3

V

DSS

V

GS

E

AS

I

AS

I

D

IDM

I

S

I

SM

P

D

R

JA

θ

R

JL

T

, T

J

STG

-40 V

±20

V

50 mJ

20.3 A

-10.5

-8.40

A

-28.9 A

-10.1 A

-28.9 A

4.18

33.4

8.9

71.4

W

mW/°C

2.14

17.1

29.9
°C/W

2.46

-55 to 150

°C

DMP4051LK3

Document Number DS32114 Rev. 3 - 2

2 of 9

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Thermal Characteristics

R

DS(on)

10

Limited

1

100m

Drain Current (A)

D

-I

10m

100m 1 10

DC

1s

T

=25°C

amb

25mm x 25mm

1oz FR4

100ms

-VDS Drain-Source Voltage (V)

Safe Operating A rea

10ms

1ms

100µs

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R

DS(on)

10

Limited

1

100m

Drain Current (A)

D

-I

10m

0.1 1 10

DC

T

=25°C

amb

50mm x 50mm

2oz FR4

1s
100ms

10ms

-VDS Drain-Source Voltage (V)

Safe Operating Area

DMP4051LK3

1ms

100µs

60

50
40

30
20

10

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

25mm x 25mm

D=0.5

D=0.2

0

T

=25°C

amb

1oz FR4

Pulse Width (s)

D=0.1

D=0.05

Single Pulse

Transient Thermal Impedance

Single Pulse

T

=25°C

100

10

25mm x 25mm

1oz FR4

1

100µ 1m 10m 100m 1 10 100 1k

Max Power Dissipation (W)

Pulse Width (s)

amb

50mm x 50mm

2oz FR4

Pulse Power Dissipation

35
30
25
20
15
10

5
0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

T

=25°C

amb

50mm x 50mm

2oz FR4

D=0.5

D=0.2

D=0.1

D=0.05

Single Pulse

Pulse Width (s)

Transient Thermal Impedance

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0
0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

50mm x 50mm

2oz FR4

25mm x 25mm

1oz FR4

Derat in g Cu rve

DMP4051LK3

Document Number DS32114 Rev. 3 - 2

3 of 9

www.diodes.com

February 2012

© Diodes Incorporated