Diodes DMP4051LK3 User Manual

f
D
Product Summary
I
V
R
(BR)DSS
-40V
DS(on)
51mΩ @ V
85mΩ @ VGS = -4.5V
= -10V
GS
T
= 25°C
A
-10.5A
-8.4A
D
Description and Applications
This MOSFET has been designed to minimize the on-state resistance (R
) and yet maintain superior switching performance, making it
DS(on)
ideal for high efficiency power management applications.
Backlighting
DC-DC Converters
Power management functions
TO252
GS
Top View
Green
D
Top View
Pin-Out
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Diodes Incorporated
DMP4051LK3
40V P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
100% Unclamped Inductive Switch (UIS) test in production
Low on-resistance
Fast switching speed
“Green” component and RoHS compliant (Note 1)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TO252
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (approximate)
D
G
S
Equivalent Circuit
Ordering Information (Notes 1 & 2)
Product Grade Marking Reel size (inches) Tape width (mm) Quantity per reel
DMP4051LK3-13 Commercial P4051L 13 16 2,500
DMP4051LK3Q-13 Automotive P4051L 13 16 2,500
Notes: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about
Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
2. Products with Q-suffix are automotive grade. Automotive products are electrical and thermal the same as the commercial, except where specified.
Marking Information
YYWW
P4051L
DMP4051LK3
Document Number DS32114 Rev. 3 - 2
www.diodes.com
= Manufacturer’s Marking P4051L = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 - 53)
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θ
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source voltage Gate-Source voltage (Note 3) Single Pulsed Avalanche Energy (Note 9) Single Pulsed Avalanche Current (Note 9)
(Note 5)
Continuous Drain current
V
= 10V
GS
TA = 70°C (Note 5) (Note 4) -7.2
Pulsed Drain current
V
= 10V
GS
(Note 6) Continuous Source current (Body diode) (Note 5) Pulsed Source current (Body diode) (Note 5)
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
(Note 4)
Power dissipation Linear derating factor
(Note 5) (Note 7)
(Note 4)
Thermal Resistance, Junction to Ambient
(Note 5) 14.0
(Note 7) 58.4 Thermal Resistance, Junction to Lead (Note 8) Operating and storage temperature range
Notes: 3. AEC-Q101 VGS maximum is ±16V.
4. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition.
5. Same as note 4, except the device is measured at t 10 sec.
6. Same as note 4, except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
9. UIS in production with L = 100µH, V
= -40V.
DD
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Diodes Incorporated
DMP4051LK3
V
DSS
V
GS
E
AS
I
AS
I
D
IDM
I
S
I
SM
P
D
R
JA
θ
R
JL
T
, T
J
STG
-40 V
±20
V
50 mJ
20.3 A
-10.5
-8.40
A
-28.9 A
-10.1 A
-28.9 A
4.18
33.4
8.9
71.4
W
mW/°C
2.14
17.1
29.9 °C/W
2.46
-55 to 150
°C
DMP4051LK3
Document Number DS32114 Rev. 3 - 2
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Thermal Characteristics
R
DS(on)
10
Limited
1
100m
Drain Current (A)
D
-I
10m
100m 1 10
DC
1s
T
=25°C
amb
25mm x 25mm
1oz FR4
100ms
-VDS Drain-Source Voltage (V)
Safe Operating A rea
10ms
1ms
100µs
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R
DS(on)
10
Limited
1
100m
Drain Current (A)
D
-I
10m
0.1 1 10
DC
T
=25°C
amb
50mm x 50mm
2oz FR4
1s 100ms
10ms
-VDS Drain-Source Voltage (V)
Safe Operating Area
DMP4051LK3
1ms
100µs
60
50 40
30 20
10
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
25mm x 25mm
D=0.5
D=0.2
0
T
=25°C
amb
1oz FR4
Pulse Width (s)
D=0.1
D=0.05
Single Pulse
Transient Thermal Impedance
Single Pulse
T
=25°C
100
10
25mm x 25mm
1oz FR4
1
100µ 1m 10m 100m 1 10 100 1k
Max Power Dissipation (W)
Pulse Width (s)
amb
50mm x 50mm
2oz FR4
Pulse Power Dissipation
35 30 25 20 15 10
5 0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
T
=25°C
amb
50mm x 50mm
2oz FR4
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
Pulse Width (s)
Transient Thermal Impedance
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0 0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
50mm x 50mm
2oz FR4
25mm x 25mm
1oz FR4
Derat in g Cu rve
DMP4051LK3
Document Number DS32114 Rev. 3 - 2
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February 2012
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)
r
r
g
g
g
g
)
r
)
Product Line o
Diodes Incorporated
DMP4051LK3
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
-40
⎯ ⎯
ON CHARACTERISTICS
Gate Threshold Voltage Static Drain-Source On-Resistance (Note 10) Forward Transconductance (Notes 10 & 11)
Diode Forward Voltage (Note 10) Reverse recovery time (Note 11) Reverse recovery charge (Note 11)
V
GS(th
R
DS (ON)
V
Q
g
fs
SD
t
r
r
-1.0
⎯ ⎯
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 12) Total Gate Charge (Note 12) Gate-Source Charge (Note 12) Gate-Drain Charge (Note 12) Turn-On Delay Time (Note 12) Turn-On Rise Time (Note 12) Turn-Off Delay Time (Note 12) Turn-Off Fall Time (Note 12)
Notes: 10. Measured under pulsed conditions. Pulse width 300μs; duty cycle ≤ 2%
11. For design aid only, not subject to production testing.
12. Switching characteristics are independent of operating junction temperatures.
C
iss
C
oss
C
rss
Q
Q
Q
s
Q
d
t
D(on
t
t
D(off
t
f
-0.5
±100
-3.0 V
0.041 0.051
0.059 0.085
16.6
V μA nA
S
-0.98 -1.2 V 138 841
674 115
67.7
7.0 14
2.2
3.7
2.3
14.1
25.1
14.3
⎯ ⎯
⎯ ⎯ ⎯
⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯
ns
nC
pF pF pF nC nC nC nC
ns ns ns ns
ID = -250μA, VGS = 0V VDS = -40V, VGS = 0V V
= ±20V, VDS = 0V
GS
ID = -250μA, VDS = VGS V
= -10V, ID = -12A
GS
= -4.5V, ID = -8A
V
GS
VDS = -15V, ID = -12A IS = -12A, VGS = 0V
I
= -12A, di/dt = 100A/μs
S
= -20V, VGS = 0V
V
DS
f = 1MHz VGS = -4.5V
= -20V
V
DS
I
= -10V
V
GS
V
= -20V, VGS = -10V
DD
= -12A, RG ≅ 6.0Ω
I
D
= -12A
D
DMP4051LK3
Document Number DS32114 Rev. 3 - 2
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Typical Characteristics
T = 25°C
10
1
0.1
Drain Current (A)
D
-I
0.01
0.1 1 10
-VDS Drain-Source Voltage (V)
Outpu t Ch aracteristics
10V
3.5V
4V
-V
3V
2.5V
GS
Drain Current (A)
D
-I
0.01
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Diodes Incorporated
T = 150°C
10
1
0.1
0.1 1 10
-VDS Drain-Source Voltage (V)
Outpu t Ch aracteristics
10V
DMP4051LK3
4V
3.5V 3V
2.5V
2V
-V
GS
10
-VDS = 10V
1
T = 150°C
T = 25°C
Drain Current (A)
D
-I
0.1
1.5 2.0 2.5 3.0 3.5
-VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
-V
GS
1
0.1
Drain-Source On-Resistance (Ω)
0.01
0.01 0.1 1 10
DS(on)
R
2.5V
-ID Drain Cu rrent (A)
On-Resistance v Drain Current
T = 25°C
3V
3.5V 4V
4.5V
10V
1.6
GS(th)
1.4
and V
1.2
DS(on)
VGS = -10V ID = -12A
1.0
0.8
Normalised R
0.6
-50 0 50 100 150
VGS = V
DS
ID = -250uA
Tj Junctio n Tempe ra ture (°C)
Normalised Curv es v Tem p erature
10
T = 150°C
1
T = 25°C
0.1
0.01
Reverse Drain Current (A)
SD
-I
1E-3
0.2 0.4 0.6 0.8 1.0 1.2
-V
Source-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
R
DS(on)
V
GS(th)
DMP4051LK3
Document Number DS32114 Rev. 3 - 2
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Typical Characteristics - continued
1000
800
C
600
400
200
C Capacitance (pF)
0
0.1 1 10
-VDS - Drain - Source Voltage (V)
ISS
C
OSS
C
RSS
VGS = 0V f = 1MHz
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Diodes Incorporated
DMP4051LK3
10
8
6
4
2
Gate-Source Voltage (V)
GS
0
-V
02468101214
Q - Charge (nC)
VDS = -20V ID = -12A
Capacitance v Drain-Source Voltage
DMP4051LK3
Document Number DS32114 Rev. 3 - 2
www.diodes.com
Gate-Source Voltage v Gate Charge
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C
g
Test Circuits
V
Q
G
Q
GS
G
Q
GD
Charge
Basic gate charge waveform
tr t
d(off)
t
(on)
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DMP4051LK3
urrent
regulator
50k
0.2␮F
12V
Gate charge test circuit
V
DS
90%
V
GS
R
10%
V
GS
t
t
d(on)
r
t
(on)
G
Pulse width ⬍ 1␮S Duty factor 0.1%
Same as
D.U.T
V
I
G
D.U.T
V
GS
R
D
DS
I
D
V
DS
V
DD
Switching time waveforms
Switchin
time test circuit
DMP4051LK3
Document Number DS32114 Rev. 3 - 2
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Package Outline Dimensions
2X b2
E
b3
L3
D
H
L4
e
3X b
Suggested Pad Layout
X2
Y2
Y1
X1
E1
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DMP4051LK3
Dim Min Max Typ
A
c2
A2
A1
L
a
Z
C
E1
Dimensions Value (in mm)
Z 11.6 X1 1.5 X2 7.0 Y1 2.5 Y2 7.0
C 6.9 E1 2.3
A1 0.00 0.13 0.08 A2 0.97 1.17 1.07
b2 0.76 1.14 0.95 b3 5.21 5.46 5.33
c2 0.45 0.58 0.531
D1 5.21
E1 4.32
L3 0.88 1.27 1.08 L4 0.64 1.02 0.83
All Dimensions in mm
TO252
A 2.19 2.39 2.29
b 0.64 0.88 0.783
D 6.00 6.20 6.10
e
E 6.45 6.70 6.58
H 9.40 10.41 9.91 L 1.40 1.78 1.59
a 0° 10°
2.286
DMP4051LK3
Document Number DS32114 Rev. 3 - 2
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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
IMPORTANT NOTICE
LIFE SUPPORT
DMP4051LK3
Document Number DS32114 Rev. 3 - 2
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