Diodes DMP4050SSS User Manual

A

f

Product Summary

V

R

(BR)DSS

-40V

DS(on)

50mΩ @ V

79mΩ @ VGS= -4.5V

GS

= -10V

Description and Applications

This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

ADVANCE INFORMATION

• Motor control

• Backlighting

• DC-DC Converters

• Power management functions

SO-8

Top View

= 25°C

T

A

-6.0A

-4.7A

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Diodes Incorporated

DMP4050SSS

40V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

I

D

• Low on-resistance

• Fast switching speed

• “Green” component and RoHS compliant (Note 1)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0 (Note 1)

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See diagram below

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

D

G

S

Top View

Equivalent Circuit

Ordering Information (Note 1)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMP4050SSS-13 P4050SS 13 12 2,500

Note: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about

Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.

Marking Information

DMP4050SSS

Document Number DS32108 Rev 1 - 2

P4050SS

YY

WW

= Manufacturer’s Marking P4050SS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-53)

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DMP4050SSS

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Drain-Source voltage Gate-Source voltage (Note 2)

Continuous Drain current

Pulsed Drain current

V

GS

V

GS

= 10V

= 10V Continuous Source current (Body diode) (Note 4) Pulsed Source current (Body diode) (Note 5)

ADVANCE INFORMATION

Thermal Characteristics @T

Characteristic Symbol Value Unit

Power dissipation Linear derating factor

Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead (Note 6)

Operating and storage temperature range

Notes: 2. AEC-Q101 VGS maximum is ±16V. measured when operating in a steady-state condition.

3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

4. Same as note (3), except the device is measured at t ≤ 10 sec.

5. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.

6. Thermal resistance from junction to solder-point (at the end of the drain lead).

V

DSS

V

GS

(Note 4) TA = 70°C (Note 4)

I

D

(Note 3) -4.4 (Note 5)

= 25°C unless otherwise specified

A

IDM

I

S

I

SM

(Note 3)

P

D

(Note 4) (Note 3)

(Note 4) 44.5

R

JA

θ

R

JL

, T

T

J

STG

-40 V

±20

V

-6.0

-4.8

A

-27.0 A

-4.0 A

-27.0 A

1.56

12.5

2.8

W

mW/°C

22.5 80

°C/W

35

-55 to 150

°C

DMP4050SSS

Document Number DS32108 Rev 1 - 2

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Thermal Characteristics

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DMP4050SSS

R

Limited

DS(on)

10

1

DC

100m

10m

Drain Current (A)

D

ADVANCE INFORMATION

1m

-I

100m 1 10

1s

Single Pulse

T

=25°C

amb

100ms

10ms

1ms

100µs

-VDS Drain-Source Voltage (V)

Safe Operating A rea

80 70 60 50 40 30 20 10

Thermal Resistance (°C/W)

T

=25°C

amb

D=0.5

D=0.2

0

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0 0 20 40 60 80 100 120 140 160

Max Power Di ssi p ation (W)

Temperature (°C)

25mm x 25mm

1oz FR4

Derat in g Curve

Single Pulse

T

=25°C

100

10

Maximum Power (W)

1

100µ 1m 10m 100m 1 10 100 1k

amb

Pulse Width (s)

Pulse Power Dissipation

DMP4050SSS

Document Number DS32108 Rev 1 - 2

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March 2010